ADMOS AMS264 Pnp silicon high frequency transistor Datasheet

Advanced
Monolithic
Systems
AMS264
PNP SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• High Collector-Emitter Breakdown
• High Frequency of 1.2GHz at 50mA
• Available in TO-220 Package
APPLICATIONS
120V Min.
• High density Television
• Computer Monitors
GENERAL DESCRIPTION
The AMS264 is an RF type small signal bipolar transistor designed for use in high performance applications such as
advanced color CRT monitor drivers that require both high frequency and high voltage. The use of fully ion implanted
technology and silicon nitride passivation makes the AMS264 a highly reliable device. For a complimentary NPN transistor
in applications where the matching characteristics are important use AMS232.
ORDERING INFORMATION:
PACKAGE TYPE
TO-220
AMS264
OPERATING JUNCTION
TEMP. RANGE
-40°C to +150°C
PIN CONNECTIONS
FRONT VIEW
1- Emitter
2- Collector
3- Base
3
2
1
ABSOLUTE MAXIMUM RATINGS (Note 1)
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
125V
130V
3.5V
250mA
Operating Junction Temperature
Storage Temperature
Power Dissipation @ TC =75°C
Thermal Resistance, Junction to Case
150°C
-40°C to +150°C
5W
25°C/W
Note1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the
Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS264
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at TC = 25°C, unless otherwise specified
Parameter
Symbol
Conditions
AMS264
Typ
Min
Max
Units
Off Characteristics
Collector - Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
120
V
Collector - Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IB = 0
120
V
Emitter - Base Breakdown Voltage
V(BR)EBO
IE = 100nA, IC = 0
3
V
Collector Cutoff Current
ICES
VCE = 110V, VBE = 0
100
nA
HFE
IC = 50mA, VCE = 15V
Output Capacitance
COB
VCB = 10V, IE = 0, f = 1MHz
2.8
pF
Collector Base Capacitance
CCB
VCB = 10V, IE = 0, f = 1MHz
2.2
pF
Input Capacitance
CIB
VEB = 3V, f = 1MHz
5.8
pF
On Characteristics
DC Current Gain
30
-
Dynamic Characteristics
Transistor Frequency
fT
VCE = 15V, IC = 50mA
1.2
GHz
TYPICAL PERFORMANCE CHARACTERISTICS
Gain Bandwidth Product vs
Collector Current
Input Capacitance vs Voltage
Junction Capacitance vs Voltage
1200
8
16
1000
800
600
400
f =250MHz
VCE = 25V
4
C OB
C CB
2
12
8
C IB
4
0
0
0 15 30 45 60 75 90 105 120 135 150
COLLECTOR CURRENT (mA)
Advanced Monolithic Systems, Inc.
6
CAPACITANCE (pF)
20
CAPACITANCE (pF)
10
GAIN BANDWIDTH PRODUCT (MHz)
1400
0
3
6
9 12 15 18 21 24 27 30
COLLECTOR BASE VOLTAGE (V)
0
1
2
3
4
5
EMITTER BASE VOLTAGE (V)
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS264
PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted.
3 LEAD TO-220 PLASTIC PACKAGE (T)
0.147-0.155
(3.734-3.937)
DIA
0.390-0.415
(9.906-10.541)
0.165-0.180
(4.191-4.572)
0.045-0.055
(1.143-1.397)
0.230-0.270
(5.842-6.858)
0.570-0.620
(14.478-15.748)
0.460-0.500
(11.684-12.700)
0.330-0.370
(8.382-9.398)
0.980-1.070
(24.892-27.178)
0.218-0.252
(5.537-6.401)
0.520-0.570
(13.208-14.478)
0.090-0.110
(2.286-2.794)
0.028-0.038
(0.711-0.965)
0.050
(1.270)
TYP
0.013-0.023
(0.330-0.584)
0.095-0.115
(2.413-2.921)
T (TO-220) AMS DRW# 042193
Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
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