BDP947, BDP949, BDP953 Silicon NPN Transistors • For AF driver and output stages 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary types: BDP948, BDP950, BDP954 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223 BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223 BDP953 BDP953 1=B 2=C 3=E 4=C - - SOT223 1 Package 2009-05-28 BDP947, BDP949, BDP953 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BDP947 45 BDP949 60 BDP953 100 Collector-base voltage Unit VCBO BDP947 45 BDP949 60 BDP953 120 Emitter-base voltage VEBO 5 Collector current IC 3 Peak collector current, tp ≤ 10 ms ICM 5 Base current IB 200 Peak base current, tp ≤ 10 ms Total power dissipation- IBM 500 Ptot 5 W 150 °C A mA TS ≤ 100 °C Junction temperature Tj Storage temperature Tstg 1Pb-containing -65 ... 150 package may be available upon special request Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 2 Value Unit ≤ 10 K/W 2009-05-28 BDP947, BDP949, BDP953 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BDP947 45 - - IC = 10 mA, IB = 0 , BDP949 60 - - IC = 10 mA, IB = 0 , BDP953 100 - - IC = 100 µA, IE = 0 , BDP947 45 - - IC = 100 µA, IE = 0 , BDP949 60 - - IC = 0 , IE = 100 µA, BDP953 120 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 45 V, IE = 0 - - 0.1 VCB = 45 V, IE = 0 , TA = 150 °C - - 20 - - 100 Emitter-base cutoff current I EBO nA VEB = 4 V, IC = 0 DC current gain2) - h FE IC = 10 mA, VCE = 5 V 25 - - IC = 500 mA, V CE = 1 V 100 - 475 IC = 2 A, VCE = 2 V, BDP947, BDP949 50 - - IC = 2 A, VCE = 2 V, BDP953 15 - - VCEsat - - 0.5 VBEsat - - 1.3 fT - 100 - MHz Ccb - 25 - pF Collector-emitter saturation voltage2) V IC = 2 A, IB = 0.2 A Base emitter saturation voltage2) IC = 2 A, IB = 0.2 A AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 3 2009-05-28 BDP947, BDP949, BDP953 DC current gain hFE = ƒ(IC) VCE = 2 V Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 10 3 mA 100°C - 25°C 10 3 -55°C IC hFE 10 2 100°C 25°C -50°C 10 2 10 1 10 1 10 0 0 10 10 1 10 2 10 3 mA 10 10 0 0 4 0.1 0.2 0.3 V 0.4 IC Base-emitter saturation voltage Collector current I C = ƒ(VBE) IC = (V BEsat), hFE = 10 VCE = 2 V 10 4 10 4 mA mA 10 3 IC -50°C 25°C 100°C -50°C 25°C 100°C IC 10 3 10 2 10 2 10 1 10 1 10 0 0 0.6 VCEsat 0.2 0.4 0.6 0.8 1 V 10 0 0 1.3 VBEsat 0.2 0.4 0.6 0.8 1 V 1.3 VBE 4 2009-05-28 BDP947, BDP949, BDP953 Collector cutoff current ICBO = ƒ(TA) VCB = 45 V Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 10 5 nA 500 pF CCB(C EB) I CB0 10 4 10 3 max 10 2 400 350 300 250 CEB 200 10 1 150 typ 100 10 0 50 10 -1 0 CCB 20 40 60 80 100 120 °C 0 0 150 4 8 12 16 TA V 22 VCB(VEB) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 2 5.5 W 4.5 RthJS Pto t 4 3.5 10 1 3 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 2.5 2 10 0 1.5 1 0.5 0 0 15 30 45 60 75 90 105 120 °C 10 -1 -6 10 150 ts 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2009-05-28 BDP947, BDP949, BDP953 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) P totmax/P totDC 10 3 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2009-05-28 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BDP947, BDP949, BDP953 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 7 2009-05-28 BDP947, BDP949, BDP953 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2009-05-28