FDLL914A SURFACE MOUNT FAST SWITCHING DIODE Features ! ! ! C Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction B A Mechanical Data ! ! ! ! ! Case: SOD-80/LL34, Glass Terminals: Solderable per MIL-STD-202, Method 208 LL34/ SOD-80 Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 Polarity: Cathode Band Weight: 0.05 grams (approx.) All Dimensions in mm Maximum Ratings and Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified FDLL914A Symbol Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Unit VRM 100 V VRRM VRWM VR 75 V VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 300 mA Average Rectified Output Current (Note 1) IO 150 mA IFSM 1.0 2.0 A Pd 500 1.68 mW mW/°C RqJA 300 K/W Tj , TSTG -65 to +175 °C Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0ms Power Dissipation (Note 1) Derate Above 25°C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Characteristic Symbo l Maximum Forward Voltage Min Max Unit Test Condition ¾ 1.0 mA mA mA nA VR = 75V VR = 70V, Tj = 150°C VR = 20V, Tj = 150°C VR = 20V IF = 10mA Maximum Peak Reverse Current IRM ¾ 5.0 50 30 25 Capacitance Cj ¾ 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ¾ 4.0 ns IF = 10mA to IR =1.0mA VR = 6.0V, RL = 100W Notes: 1. Valid provided that device terminals are kept at ambient temperature. 1 of 2 10,000 100 IR, LEAKAGE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10 1.0 0.1 1000 100 10 VR = 20V 1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 2 of 2 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2, Leakage Current vs Junction Temperature