Diodes BSS138-7-F N-channel enhancement mode mosfet Datasheet

BSS138
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data











Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)




Drain
SOT23
D
Gate
S
G
Source
Top View
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
BSS138-7-F
BSS138-13-F
BSS138Q-7-F
Notes:
Qualification
Commercial
Commercial
Automotive
Case
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test Site)
M = Date Code Marking for CAT (Chengdu Assembly/ Test Site)
Y or = Year (ex: E = 2017)
M = Month (ex: 9 = September)
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
Shanghai A/T Site
1998
1999
2000
J
K
L
…
…
2002
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
N
D
E
F
G
H
I
J
K
L
M
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
BSS138
Document number: DS30144 Rev. 21 - 2
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www.diodes.com
August 2017
© Diodes Incorporated
BSS138
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS  20K
Gate-Source Voltage
Continuous
Gate-Source Voltage
Non Repetitive, Pulse Width<50s
Drain Current
Continuous
Pulsed Drain Current (10μs Pulse Duty Cycle = 1%)
Symbol
VDSS
VDGR
VGSS
ID
IDM
Value
50
50
20
40
200
1
Unit
V
V
V
V
mA
A
Value
300
417
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
RJA
TJ, TSTG
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
50


75



0.5
100
V
µA
nA
VGS = 0V, ID = 250A
VDS = 50V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(TH)
RDS(ON)
gFS
0.5

100
1.2
1.4

1.5
3.5

V

mS
VDS = VGS, ID = 250A
VGS = 10V, ID = 0.22A
VDS = 25V, ID = 0.2A, f = 1.0KHz
Ciss
Coss
Crss






50
25
8.0
pF
pF
pF
VDS = 10V, VGS = 0V, f = 1.0MHz
tD(ON)
tD(OFF)




20
20
ns
ns
VDD = 30V, ID = 0.2A, RGEN = 50
6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our
website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
0.6
ID, DRAIN-SOURCE CURRENT (A)
T
°C°C
TjJ==2525
0.8
VGS = 3.5V
0.5
ID, DRAIN-SOURCE CURRENT (A)
Notes:
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
1
2
3
4
5
6
7
8
9 10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
BSS138
Document number: DS30144 Rev. 21 - 2
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0.7
VDS = 1V
-55°C
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.1
0
0
0.5 1
1.5
2
2.5
3.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4
4.5
August 2017
© Diodes Incorporated
BSS138
2.4
V GS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ()
2.45
2.25
2.05
1.85
VGS = 10V
ID = 0.5A
1.65
1.45
1.25
VGS = 4.5V
ID = 0.075A
1.05
0.85
2.0
1.6
1.2
0.8
0
-50
VGS = 2.5V
7
6
5
25°C
4
3
-55°C
2
1
0
-25
0
25
50
75 100 125 150
TTJj, JUNCTION TEMPERATURE (癈
(°C))
Fig. 4 Gate Threshold Variation vs. Junction
Ambient Temperature
Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
-5
45
145
95
TTJj, JUNCTION TEMPERATURE
TEMPERATURE (癈
(°C))
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
150°C
VGS = 4.5V
5
150°C
4
3
2
25°C
1
-55°C
0
0.1
BSS138
Document number: DS30144 Rev. 21 - 2
8
VGS = 2.75V
7
6
150°C
5
4
25°C
3
2
-55°C
1
0
0.1
0.15
0.25
0.2
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0.3
0.5
0.2
0.4
ID, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0
9
0.05
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
0
6
250礎
IDID==250µA
0.4
0.65
-55
8
ID = 1mA
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3.5
VGS = 10V
3
150°C
2.5
2
1.5
25°C
1
-55°C
0.5
0
0.1
0.3
0.5
0.2
0.4
ID, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0
August 2017
© Diodes Incorporated
BSS138
1
100
C, CAPACITANCE (pF)
ID, DIODE CURRENT (A)
VGS = 0V
f = 1MHz
0.1
150°C
-55°C
0.01
25°C
iSS
CCiss
10
OSS
CCoss
CrSS
C
rss
1
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
G
F
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
Y
C
Y1
X
BSS138
Document number: DS30144 Rev. 21 - 2
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
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© Diodes Incorporated
BSS138
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
BSS138
Document number: DS30144 Rev. 21 - 2
5 of 5
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August 2017
© Diodes Incorporated
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