Polyfet F1427 Patented gold metalized silicon gate enhancement mode rf power vdmos transistorã Datasheet

polyfet rf devices
F1427
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
250 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
440 Watts
Maximum
Junction
Temperature
0.4 o C/W
200 o C
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 o C to 150o C
10 A
150 V
150 V
30V
RF CHARACTERISTICS ( 250 WATTS OUTPUT )
SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficienc
VSWR
MIN
TYP
MAX
13
65
Load Mismatch Toleranc
20:1
UNITS
TEST CONDITIONS
dB
Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
%
Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
Relative
Idq = 1.2 A, Vds = 50.0 V, F = 150 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
Bvdss
Drain Breakdown Voltag
125
Idss
Zero Bias Drain Curren
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
Rdson
TYP
MAX
UNITS
V
1
TEST CONDITIONS
Ids =
0.1 A,
Vgs = 0V
12
mA
Vds = 50.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.15 A,
Vgs = Vds
4.8
Mho
Vds = 10V, Vgs = 5V
Saturation Resistanc
0.25
Ohm
Vgs = 20V, Ids = 12 A
Idsat
Saturation Curren
28.8
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
270
pF
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
13.2
pF
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120
pF
Vds = 50.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
F1427
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1E 6 DICE CAPACITANCE
1000
Ciss
Coss
100
Crss
10
0
5
10
15
20
25
30
35
40
45
50
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1E6DICE IV
F1E 6 DICE ID & GM Vs VG
30
Id in amps; Gm in mhos
100.00
25
ID IN AMPS
20
15
10
5
Id
10.00
gM
1.00
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDSINVOLTS
Vg=6v
vg=8v
14
vg=10v
S11 AND S22 SMITH CHART
16
18
20
0
2
4
6
8
10
12
14
16
18
20
Vgs in Volts
vg=12v
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
Similar pages