Pan Jit BAS40ADW Surface mount schottky diode array Datasheet

BAS40TW/ADW/CDW/SDW/RDW
SURFACE MOUNT SCHOTTKY DIODE ARRAYS
These devices feature electrically-isolated Schottky diodes connected
in various configurations housed in a very small SOT-363 (SC70-6L)
4
FEATURES
5
6
Maximum forward voltage @ 10mA of 0.5V
3
Maximum leakage current @ 25V of 1.0uA
2
1
Reverse voltage rating of 40V
Also available in lead-free plating (100% matte tin finish)
SOT- 363
APPLICATIONS
Rail-to-rail ESD protection
Various
Configurations
(See Diagrams
Below)
Overshoot and undershoot switching control
Mobile phones and accessories
Video game consoles connector ports
BAS40TW
BAS40ADW
BAS40CDW
Isolated Triple
Common Anode
Common Cathode
6
5
4
1
2
3
Marking Code: S40
6
5
4
1
2
3
Marking Code: S42
6
5
4
1
2
3
Marking Code: S43
BAS40RDW
BAS40SDW
Reverse Series
Series
6
5
4
1
2
3
Marking Code: S44
6
5
4
1
2
3
Marking Code: S45
MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted
Rating
Symbol
Value
VRRM
40
V
Continuous Reverse Voltage
VR
40
V
Continuous Forward Current
IF
200
mA
Non-repetitive Peak Forward Current, t = 1sec, Square Wave
I FSM
600
mA
Total Power Dissipation (Note 1)
P tot
225
mW
Operating Junction Temperature Range
TJ
-55 to 125
°C
Storage Temperature Range
Tstg
-65 to 125
°C
Repetitive Peak Reverse Voltage
Units
Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
8/10/2005
Symbol
Value
Units
R thetaJA
556
°C/W
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BAS40TW/ADW/CDW/SDW/RDW
ELECTRICAL CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted
Parameter
Symbol
Breakdown Voltage (Note 1)
V BR
VF
Forward Voltage (Note 1)
Min
Typ
Max
Units
I BR = 10uA
40
-
-
V
I F = 1.0mA
-
-
380
I F = 10mA
-
-
500
I F = 40mA
-
-
1000
V R = 25V
-
-
1.0
uA
Conditions
mV
Reverse Leakage Current (Note 1)
IR
Total Capacitance
CT
0Vdc Bias, f =1 MHz
-
-
5.0
pF
Reverse Recovery Time
(See Figure 1)
t rr
I F = 10mA, I R = 10mA
R L= 100 Ohms;
measured at IRrec = 1mA
-
-
5.0
ns
Note 1. Short duration pulse to minimize self-heating effect
820 Ω
+10 V
2 .0 k Ω
100 µH
0 .1 µ F
0 .1 µ F
IF
?
DUT
5 0 Ω O u tp u t
P u ls e
G e n e ra to r
5 0 Ω In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0kΩ variable resistor adjusted for a forward current (IF) to 10mA
2. Input pulse is adjusted to IR(peak) is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
8/10/2005
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BAS40TW/ADW/CDW/SDW/RDW
TYPICAL CHARACTERISTIC CURVES (Per Diode)
100
(uA)
10
T A = 75 °C
1
T A = 125 °C
10
R
T A = 125 °C
Reverse Leakage Current, I
Forward Current, I
F
(mA)
100
T A = -25 °C
T A = 75 °C
1
T A = 25 °C
0.1
T A = -25 °C
0.01
T A = 25 °C
0.1
0.001
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
10
Forward Voltage , VF (V)
20
30
40
Reverse Voltage, V R (V)
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
4
Total Capacitance, C T (pF)
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
30
40
Reverse Voltage, VR (V)
Fig. 4. Typical Capacitance
8/10/2005
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BAS40TW/ADW/CDW/SDW/RDW
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BAS40xxx T/R7 - 7" reel, 3K units per reel
BAS40xxx T/R13 - 13" reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
8/10/2005
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