NXP BLF8G20LS-260A Power ldmos transistor Datasheet

BLF8G20LS-260A
Power LDMOS transistor
Rev. 1 — 13 September 2012
Objective data sheet
1. Product profile
1.1 General description
260 W LDMOS packaged asymmetrical Doherty power transistor for base station
applications at frequencies from 1805 MHz to 1880 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in an asymetric Doherty production test circuit.
Test signal
2-carrier W-CDMA[2]
D
f
VDS
PL(AV)
Gp
ACPR
(MHz)
(V)
(W)
(dB)
(%)
(dBc)
1805 to 1880
28
50
15.5
43
23[1]
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01% probability on CCDF per carrier, carrier
spacing 5 MHz.
[2]
IDq = 750 mA (main); VGS(amp)peak = 0.80 V.
1.2 Features and benefits










Excellent ruggedness
High-efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (1805 MHz to 1880 MHz)
Asymmetrical design to achieve optimum efficiency across the band
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
the 1805 MHz to 1880 MHz frequency range
BLF8G20LS-260A
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1 (main)
2
drain2 (peak)
3
gate1 (main)
4
gate2 (peak)
5
Simplified outline
1
Graphic symbol
2
1
5
3
3
4
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
BLF8G20LS-260A
Name Description
Version
-
SOT539B
earless flanged balanced ceramic package; 4 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS(amp)main
main amplifier gate-source voltage
0.5
+13
V
VGS(amp)peak
peak amplifier gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
BLF8G20LS-260A
Objective data sheet
Conditions
thermal resistance from junction
to case
Typ
Unit
PL = 50 W
0.36
K/W
PL = 200 W
0.29
K/W
VDS = 28 V; IDq = 750 mA (main);
VGS(amp)peak = 0.80 V; Tcase = 80 C
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Rev. 1 — 13 September 2012
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Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Main device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.44 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 144 mA
1.50
1.88
2.30
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
27
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.20 A
-
10.8
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.04 A
-
0.102 -

65
-
-
V
Peak device
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.2 mA
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 220 mA
1.50
1.80
2.30
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
40
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
gfs
forward transconductance
VDS = 10 V; ID = 11.0 A
-
15.9
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 7.7 A
-
0.067 -

Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 1 - 64 DPCH; f1 = 1807.5 MHz; f2 = 1812.5 MHz; f3 = 1872.5 MHz;
f4 = 1877.5 MHz; RF performance at VDS = 28 V; IDq = 750 mA (main); VGS(amp)peak = 0.80 V;
Tcase = 25 C; unless otherwise specified; in an asymetric Doherty production test circuit in
1805 MHz to 1880 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 50 W
<tbd>
15.5
-
dB
RLin
input return loss
PL(AV) = 50 W
-
10
<tbd>
dB
D
drain efficiency
PL(AV) = 50 W
<tbd>
43
-
%
ACPR
adjacent channel power ratio
PL(AV) = 50 W
-
23
<tbd>
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-260A is capable of withstanding a load mismatch corresponding to a
VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V;
IDq = 750 mA (main); VGS(amp)peak = 0.80 V; PL = 200 W (CW); f = 1805 MHz to
1880 MHz.
BLF8G20LS-260A
Objective data sheet
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Rev. 1 — 13 September 2012
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Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance of main device
Measured load-pull data of main device; IDq = 750 mA (main); VDS = 28 V.
f
ZS[1]
ZL[1]
PL(3dB)
D[2]
Gp[2]
(MHz)
()
()
(W)
(%)
(dB)
Peak power load
1810
0.9  j3.3
1.4  j3.9
191
59
15.5
1840
0.8  j3.4
1.4  j3.9
182
58
15.7
1880
0.8  j3.7
1.4  j3.9
182
58
15.6
Peak drain efficiency load
1810
0.9  j3.3
2.3  j2.7
138
70
17.9
1840
0.8  j3.4
2.5  j2.5
123
69
18.5
1880
0.8  j3.7
2.1  j2.5
127
68
18.0
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
Table 9.
Typical impedance of peak device
Measured load-pull data of peak device; IDq = 1200 mA (peak); VDS = 28 V.
f
ZS[1]
ZL[1]
PL(3dB)
D[2]
Gp[2]
(MHz)
()
()
(W)
(%)
(dB)
Peak power load
1810
0.8  j3.5
1.7  j4.0
257
61
16.0
1840
0.8  j3.8
1.9  j4.3
257
59
15.8
1880
0.8  j3.9
1.9  j4.3
251
59
16.2
Peak drain efficiency load
1810
0.8  j3.5
2.5  j2.5
178
70.0
18.6
1840
0.8  j3.8
2.5  j2.5
180
70.0
18.5
1880
0.8  j3.9
2.3  j2.7
182
68.0
18.8
[1]
ZS and ZL defined in Figure 1.
[2]
at 3 dB gain compression.
drain
ZL
gate
ZS
001aaf059
Fig 1.
BLF8G20LS-260A
Objective data sheet
Definition of transistor impedance
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Power LDMOS transistor
7.3 Test circuit
PP
PP
5
&
&
/
5
&
/
& &
&
&
;
5
&
&
PP
&
&
&
&
&
&
&
&
&
&
&
&
/
5
&
&
5
&
/
&
Printed-Circuit Board (PCB): Rogers RO4350; thickness = 0.508 mm.
See Table 10 for list of components.
Fig 2.
Component layout for test circuit
Table 10. List of components
For test circuit, see Figure 2.
Component
BLF8G20LS-260A
Objective data sheet
Description
Value
Remarks
C11, C12, C14, C15, C16, multilayer ceramic chip capacitor
C22, C23, C25, C31
30 pF
ATC100B
C13
multilayer ceramic chip capacitor
0.5 pF
ATC800B
C17, C26
multilayer ceramic chip capacitor
100 nF
Murata
C18, C29
multilayer ceramic chip capacitor
1 F
Murata
C19, C27, C30, C32
multilayer ceramic chip capacitor
10 F
Murata
C20, C28
electrolytic capacitor
2200 F
Panasonic
C21
multilayer ceramic chip capacitor
0.3 pF
ATC800B
C24
multilayer ceramic chip capacitor
1.2 pF
ATC800B
R27
resistor
50 
EMC
R28, R29
resistor
9.1 
Vishay Dale
R30
resistor
9.1 
1206
L3, L4
ferrite bead
-
Fair Rite 2743019447
L5, L6
inductor
12 nH
Coilcraft
X1
hybrid coupler
-
Anaren X3C19P1-03S
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Power LDMOS transistor
7.4 Graphical data
7.4.1 CW pulsed
*S
G%
DDD
Ș'
Ș'
*S
G%
DDD
3/ :
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
3/ G%P
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
(3) f = 1880 MHz
Power gain and drain efficiency as function of
load power; typical values
5/LQ
G%
*S
(1) f = 1805 MHz
Fig 3.
Ș'
*S
Ș'
Fig 4.
Power gain and drain efficiency as function of
load power; typical values
DDD
3/ G%P
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 5.
Input return loss as a function of load power; typical values
BLF8G20LS-260A
Objective data sheet
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Rev. 1 — 13 September 2012
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Power LDMOS transistor
7.4.2 2-Carrier W-CDMA
*S
G%
DDD
*S
Ș'
*S
G%
DDD
*S
Ș'
Ș'
Ș'
3/ :
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
(3) f = 1880 MHz
Power gain and drain efficiency as function of
load power; typical values
5/LQ
G%
3/ G%P
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA;
VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
Fig 6.
Fig 7.
Power gain and drain efficiency as function of
load power; typical values
DDD
3/ G%P
VDS = 28 V; VGS(amp)main = 2.208 V; IDq = 746 mA; VGS(amp)peak = 0.80 V.
(1) f = 1807.5 MHz
(2) f = 1842.5 MHz
(3) f = 1877.5 MHz
Fig 8.
Input return loss as a function of load power; typical values
BLF8G20LS-260A
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 September 2012
© NXP B.V. 2012. All rights reserved.
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BLF8G20LS-260A
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Power LDMOS transistor
8. Package outline
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1
D
U1
H1
w2
1
c
D
2
E1
U2
H
E
L
3
4
w3
b
Q
e
0
5
10 mm
scale
Dimensions
Unit(1)
mm
mm
w2
w3
0.25
0.25
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
nom
0.54
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
0.01
max
nom
min
A
b
E
E1
4.7
11.81
0.18 31.55 31.52
c
D
D1
9.5
9.53
4.2
11.56
0.10 30.94 30.96
9.3
9.27
e
F
H
H1
L
Q
U1
U2
1.75 17.12 25.53 3.48
2.26 32.39 10.29
1.50 16.10 25.27 2.97
2.01 32.13 10.03
13.72
Note
1. millimeter dimensions are derived from the original inch dimensions.
Outline
version
References
IEC
JEDEC
JEITA
Issue date
11-10-28
12-05-02
SOT539B
Fig 9.
sot539b_po
European
projection
Package outline SOT539B
BLF8G20LS-260A
Objective data sheet
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Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
GSM
Global System for Mobile communications
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
PAR
Peak-to-Average Ratio
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF8G20LS-260A v.1
20120913
Objective data sheet
-
-
BLF8G20LS-260A
Objective data sheet
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Rev. 1 — 13 September 2012
© NXP B.V. 2012. All rights reserved.
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
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sheet, which is available on request via the local NXP Semiconductors sales
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Product specification — The information and data provided in a Product
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF8G20LS-260A
Objective data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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malfunction of an NXP Semiconductors product can reasonably be expected
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representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Notice: All referenced brands, product names, service names and trademarks
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For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF8G20LS-260A
Objective data sheet
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14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 4
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
CW pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 September 2012
Document identifier: BLF8G20LS-260A
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