Fairchild FDC6324L Integrated load switch Datasheet

March 1999
FDC6324L
Integrated Load Switch
General Description
Features
VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V
VDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V.
These Integrated Load Switches are produced using
Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance and
provide superior switching performance. These devices
are particularly suited for low voltage high side load
switch application where low conduction loss and ease
of driving are needed.
SOT-23
SuperSOTTM-6
High density cell design for extremely low on-resistance.
VON/OFF Zener protection for ESD ruggedness.
>6KV Human Body Model.
SuperSOTTM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
SuperSOTTM-8
SO-8
4
V in,R1
SOIC-16
SOT-223
EQUIVALENT CIRCUIT
3
Vout,C1
2
Vout,C1
1
R2
Q2
O N / O FF
5
+
IN
V DROP
-
OUT
Q1
O N / O FF
R1,C1
6
pin 1
SuperSOT TM-6
Absolute Operating Range
See Application Circuit
TA = 25°C unless otherwise noted
Symbol
Parameter
VIN
Input Voltage Range
VON/OFF
ON/OFF Voltage Range
IL
Load Current @ VDROP=0.5V - Continuous
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Temperature Range
ESD
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
- Pulsed
(Note 1)
FDC6324L
Units
3 - 20
V
1.5 - 8
V
1.5
A
(Note 1 & 3)
2.5
(Note 2a)
0.7
W
-55 to 150
°C
6
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 2a)
180
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 2)
60
°C/W
© 1999 Fairchild Semiconductor Corporation
FDC6324L Rev. D
Electrical Characteristics (T
Symbol
A
= 25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
IFL
Forward Leakage Current
VIN = 20 V, VON/OFF = 0 V
1
µA
IRL
Reverse Leakage Current
VIN = -20 V, VON/OFF = 0 V
-1
µA
3
20
V
1.5
8
V
0.135
0.2
V
0.215
0.3
ON CHARACTERISTICS (Note 3)
VIN
Input Voltage
VON/OFF
On/Off Voltage
VDROP
Conduction Voltage Drop @ 1A
IL
Load Current
VIN = 10 V, VON/OFF = 3.3V
VIN = 5 V, VON/OFF = 3.3 V
VDROP = 0.2 V, VIN = 10 V, VON/OFF = 3.3 V
1
VDROP = 0.3 V, VIN = 5 V, VON/OFF = 3.3 V
1
A
Notes:
1. VIN=20V, VON/OFF=8V, VDROP=0.5V, TA=25oC
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed
by design while RθCA is determined by the user's board design.
PD (t ) =
TJ−T A
R θJ A(t )
=
TJ−T A
R θJ C+R θCA(t )
= I 2D (t ) × RDS(ON)@TJ
Typical RθJA for single device operation using the board layouts shown below on FR-4 PCB in a still air environment:
a. 180oC/W when mounted on a 2oz minimum copper pad.
2a
Scale 1 : 1 on letter size paper
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6324L Rev. D
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
0.5
0.5
TJ = 125°C
TJ = 125°C
0.4
TJ = 25°C
TJ = 25°C
VDROP , (V)
V DROP , (V)
0.4
0.3
0.2
V IN = 12V
V ON/OFF = 1.5 - 8V
PW =300us, D≤ 2%
0.1
0
0.3
0.2
0
0
1
2
3
V IN = 5V
V ON/OFF = 1.5 - 8V
PW =300us, D≤ 2%
0.1
4
0
1
2
Figure 1. VDROP Versus IL at VIN=12V.
0.45
I = 1A
L
V ON/OFF = 1.5 - 8V
PW =300us, D≤ 2%
I L = 1A
V IN = 5V
PW =300us, D ≤ 2%
0.4
RDS(ON), (Ohm)
V DROP (V)
0.8
0.6
0.4
TJ = 125°C
0.35
TJ = 125°C
0.3
0.25
TJ = 25°C
0.2
0.2
TJ = 25°C
1
2
3
4
5
V IN (V)
1
0.15
0
1
2
3
4
5
I L , (A)
Figure 4. R(ON) Versus IL at VIN=5.0V.
Figure 3. VDROP Versus VIN at IL=1A.
I L = 1A
V ON/OFF = 1.5 - 8V
PW =300us, D≤ 2%
0.8
R (ON) ,(Ohm)
4
Figure 2. VDROP Versus IL at VIN=5.0V.
1
0
3
I L (A)
I L ,(A)
0.6
0.4
TJ = 125°C
0.2
TJ = 25°C
0
1
2
3
4
5
VIN , (V)
Figure 5. On Resistance Variation with
Input Voltage.
FDC6324L Rev.D
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
500
500
300
200
400
td(off)
Vin = 12V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
Time (us)
Time (us)
400
Vin = 5V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
tf
300
200
td(off)
tf
100
100
tr
tr
0
0
20
40
60
td(on)
td(on)
80
0
100
0
20
40
Figure 6. Switching Variation with R2 at
Vin=12V and R1=300KOhm.
% of Current Overshoot
Time (us)
120
Vin = 3.3V
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
tr
200
td(on)
tf
td(off)
100
0
0
20
40
60
80
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
Vin = 12V
100
80
60
40
5V
20
3.3V
100
0
0
20
40
R2 (KOhm)
80
t on
IL = 1A
Von/off = 5V
R1 = 300KOhm
Ci = 10uF
Co = 1uF
100
Figure 9. % of Current Overshoot Variation
with Vin and R2.
2,000
Vdrop (mV)
60
R2 (KOhm)
Figure 8. Switching Variation with R2 at
Vin=3.3V and R1=300KOhm.
1,600
100
Figure 7. Switching Variation with R2 at
Vin=5V and R1=300KOhm.
500
300
80
R2 (KOhm)
R2 (KOhm)
400
60
t d(on)
t off
tr
t d(off)
tf
90%
90%
Vin = 3.3V
1,200
VOUT
10%
800
10%
INVERTED
90%
5V
400
12V
0
0
20
40
60
80
100
V IN
50%
50%
10%
R2 (KOhm)
PULSE W IDTH
Figure 10. Vdrop Variation with Vin and R2.
Figure 11. Switching Waveforms.
FDC6324L Rev. D
Typical Electrical Characteristics (TA = 25 OC unless otherwise noted )
IL , DRAIN CURRENT (A)
10
10
0u
s
3
1
R(
ON
)L
IM
IT
10
10
0m
s
1s
0.3
0.1
0.03
0.01
0.1
1m
s
ms
DC
V IN = 12V
SINGLE PULSE
RθJA = See Note 2a
TA = 25°C
0.2
0.5
1
2
5
10
20
30
V DROP (V)
Figure 12. Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
RθJA (t) = r(t) * R θJA
R θJA = See Note 2a
0.1
P(pk)
0.05
t1
0.02
0.02
0.01
0.01
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t 1/ t 2
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
t 1, TIME (sec)
1
10
100
300
Figure 13. Transient Thermal Response Curve.
Note: Thermal characterization performed on the conditions described in Note
2a. Transient thermal response will change depends on the circuit board design.
FDC6324L Rev. D
FDC6324L Load Switch Application
APPLICATION CIRCUIT
Q2
IN
OUT
C1
R1
O N / O FF
Q1
Co
LOAD
R2
Component Values
R1
Typical 10k - 1MΩ
R2
Typical 0 - 10kΩ
C1
Typical 1000pF
General Description
This device is particularly suited for computer
peripheral switching applications where 20V
input and 1A output current capability are
needed. This load switch integrates a small
N-Channel Power MOSFET (Q1) which drives a
large P-Channel Power MOSFET (Q2) in one
tiny SuperSOTTM-6 package.
A load switch is usually configured for high side
switching so that the load can be isolated from
the active power source. A P-Channel Power
MOSFET, because it does not require its drive
voltage above the input voltage, is usually more
cost effective than using an N-Channel device in
this particular application. A large P-Channel
Power MOSFET minimizes voltage drop. By
using a small N-Channel device the driving
stage is simplified.
(optional)
(optional)
Design Notes
R1 is needed to turn off Q2.
R2 can be used to soft start the switch in the case the output capacitance Co is small.
R2 ≤
should be at least 10 times smaller than R1 to guarantee Q1 turns on.
By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by
the equation
when the switch is ON. IBIAS_LOSS can be minimized by large R1.
I BIAS_LOSS = R 1Vin+R2
R2 and CRSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on,
additional capacitance C1 can be added externally to slow down the turn on.
FDC6324L Rev. D
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration: Figure 1.0
Customize Label
Antistatic Cover Tape
Conductive Embossed
Carrier Tape
F63TNR
Label
631
Packaging Option
Packaging type
Standard
(no flow code)
TNR
Qty per Reel/Tube/Bag
3,000
Reel Size
631
631
D87Z
SSOT-6 Unit Orientation
TNR
10,000
7” Dia
13”
184x187x47
343x343x64
Max qty per Box
9,000
20,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
Box Dimension (mm)
631
Pin 1
SSOT-6 Packaging Information
343mm x 342mm x 64mm
Intermediate box for D87Z Option
F63TNR Label
Note/Comments
F63TNR
Label
F63TNR Label sample
184mm x 184mm x 47mm
Pizza Box for Standard Option
F63TNR
Label
LOT: CBVK741B019
QTY: 3000
FSID: FDC633N
SPEC:
D/C1: D9842
D/C2:
Trailer
SSOT-6 Tape Leader
Configuration: Figure 2.0
QTY1:
QTY2:
SPEC REV:
CPN:
QARV:
(F63TNR)2
Carrier Tape
Cover Tape
 1998 Fairchild Semiconductor Corporation
Trailer Tape
160mm minimum
Components
Leader Tape
390mm minimum
December 1998, Rev. B
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.00
+/-0.125
1.75
+/-0.10
F
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
T
1.37
+/-0.10
0.255
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SSOT-6 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7” Diameter Option
B Min
Dim C
See detail AA
W3
13” Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
7” Dia
7.00
177.8
8mm
13” Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
December 1998, Rev. B
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT-6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
 1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
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FASTr™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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that has been discontinued by Fairchild semiconductor.
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