NJSEMI BDX35 Silicon planar epitaxial power transistor Datasheet

i, L/ nc.
TELEPHONE: (973) 376-2922
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
(212)227-6005
FAX: (973) 376-8960
NPN BDX35 - BDX36 - BDX37
SILICON PLANAR EPITAXIAL POWER
TRANSISTORS
The BDX35, BDX36 and BDX37 are NPN transistors mounted in Jedec TO-126 plastic package.
They are intented for use in high current switching applications and switching regulator circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VCES
Collector-Emitter
(VBE=0)
BDX35
BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
P^?y
Voltage
BDX36
BDX37
;BDX35
; BDX36
BDX37
Emitter-Base Voltage
VEBO
Ratings
Symbol
ilqRMS)
Pnlla^tnr r*i irront
IB
Racs rurrent
Junction Temperature
Tstg
Storage Temperature
V
5
V
Value
Unit
5
BDX36
BDX37
BDX35
BpX36
10
1
BDX35
IBM
Tj
V
BDX37
base current
Power Dissipation
V
i oDXoO
ICM
PT
BDX35
i..|pX36
60
60
80
100
120
120
100
120
120
Unit
BUAOf
!
'c
i
IB
Value
@ Tmb = 75°
BDX36
BDX37
BDX35
; BDX36
BDX37
BDX35
BDX36
BDX37
BDX35
: BDX36
BDX37
2
15
Watts
W/°C
150
°C
-65 to +150
°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN BDX35 - BDX36 - BDX37
THERMAL CHARACTERISTICS
Ratings
Symbol
RthJ-mb
RthJ-a
Value
Unit
5
K/W
100
K/W
i BDX35
Thermal Resistance, Junction to mouting Dr.v,c
base
BDX36
BDX37
BDX35
Thermal Resistance, Junction to ambient „_..,_»
infree air
i BDX36
i BDX37
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
IE=0 , VCB=80 V
IE=0 , VCB=100 V
iICBO
Collator rut
off current
current
Collector
cut-off
BDX35
BDX36
'--—
'E=0- -' V
VCB=100
BDX37
^=QQyV ^ = ^^ ----^
1
i
IEBO
Cmittor i^nt nff^nrront
!E=O , VCB=100 V,Tj = 100°C BDX36
IE=0 , VCB=100 V,T| = 100°C BDX37
BDX35
lc=0, VEB=4 V
BDX36
-
!
BDX35
; Rr)X36
Collector-Emitter saturation
Voltage (*)
BDX37
BDX35
> 60X36
BDX37
: BDX36
BDX35
BDX36
..^. —
onv^k
- JOXM
lc=7.0 A, IB=700 mA
:ic=10A, IB=1A
VBE(SAT)
lc=5.0 A, IB=500 mA
,c=7.0A,,B=700mA
lc=10A, IB=1A
hFE
Fir* Purront l^ain f*\— 1 H \
\*— ^nOm A
;
-
-
-
DDX35
BDX36
BDX37
' lc=5.0 A, IB=500 mA
„
t.
Base-Emitter saturation
Wnltane
vonage (l*\*^/
)
-
BDX37
lc=0,VEB=5V
VcE(SAT)
Min Typ MX
Test Condition(s)
:BDX36
BDX35
BDX36
.__'.
-
10
10
10
50
50
50
10
To
To
1
1
1
0,9
0,7
0,9
1,2
-
-
-
-
-
-
1,2
1,5
-
-
1,6
-
-
-
-
2,0
2,0
2,5
45
-
450
130
-
„
i DlJAOO
BDX36
BDX37
-
80
Unit
11A
UA
uA
mA
V
V
NPN BDX35 - BDX36 - BDX37
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
min
A
B
C
D
E
F
G
H
L
M
N
P
Pin 1 :
Pin 2:
Case :
inches
max
7.4
7.8
10.5
10.8
2.7
2.4
0.7
0.9
2.2 typ.
0.49
0.75
4.4 typ.
2.54 typ.
15.7 typ.
1.2 typ.
3.8 typ.
3.0
3.2
Emitter
Collector
Base
min
max
0.307
0.295
0.413
0.425
0.094
0.106
0.027
0.035
0.087 typ.
0.029
0.019
0.1 73 typ.
0.1 00 typ.
0.61 8 typ.
0.047 typ.
0.1 49 typ.
0.118
0.126
^
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