Excelics EFA960CR-180F Low distortion gaas power fet Datasheet

EFA960CR-180F
Low Distortion GaAs Power FET
ISSUED 05/11/2006
FEATURES
•
•
•
•
•
•
Non-Hermetic 180mil Metal Flange Package
+36.5 dBm Typical Output Power
16.0 dB Typical Power Gain at 2GHz
0.5 x 9600 Micron Recessed “Mushroom” Gate
Si3N4 Passivation
Advanced Epitaxial Heterojunction Profile
Provides High Power Efficiency, Linearity
and Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
IDSS
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 2GHz
f = 4GHz
VDS = 8 V, IDS ≈ 50% IDSS
Gain at 1dB Compression
f = 2GHz
f = 4GHz
VDS = 8 V, IDS ≈ 50% IDSS
Power Added Efficiency at 1dB Compression
f = 2GHz
VDS = 8 V, IDS ≈ 50% IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
1600
2720
GM
Transconductance
1100
1450
VP
Pinch-off Voltage
VDS = 3 V, IDS = 28 mA
BVGD
Drain Breakdown Voltage
IGD = 9.6 mA
-13
-15
BVGS
Source Breakdown Voltage
IGS = 9.6 mA
-7
-14
SYMBOL
P1dB
G1dB
PAE
RTH
VDS = 3 V, VGS = 0 V
Thermal Resistance
MIN
35.0
14.5
TYP
36.5
36.5
16.0
11.0
MAX
UNITS
dBm
dB
34
%
3520
mA
mS
-2.0
-3.5
V
V
V
o
6*
C/W
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
Vds
Vgs
Igsf
Igsr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reversed Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE1
CONTINUOUS2
12V
-5V
43.2 mA
-7.2 mA
33 dBm
175oC
-65/175oC
23 W
8V
-3V
14.4 mA
-2.4 mA
@ 3dB Compression
175oC
-65/175oC
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised May 2006
EFA960CR-180F
Low Distortion GaAs Power FET
ISSUED 05/11/2006
S-PARAMETERS
VDS = 8 V, IDS ≈ 50% IDSS
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.976
0.971
0.948
0.934
0.929
0.908
0.893
0.868
0.847
0.835
0.830
0.823
0.807
0.807
0.824
0.851
0.882
0.901
0.890
0.893
-158.7
-176.4
176.1
168.5
162.1
155.3
146.5
134.3
119.2
101.9
84.3
65.8
46.7
21.5
-7.2
-33.9
-54.9
-74.3
-88.9
-104.2
5.862
3.028
2.702
2.132
1.853
1.736
1.728
1.740
1.751
1.735
1.700
1.661
1.632
1.603
1.473
1.259
1.047
0.876
0.733
0.666
93.1
77.0
69.3
60.0
51.1
41.5
29.7
14.9
-2.0
-20.3
-38.6
-57.7
-77.4
-100.2
-124.5
-147.7
-167.0
174.5
160.0
144.8
0.010
0.012
0.018
0.021
0.025
0.030
0.038
0.047
0.056
0.065
0.074
0.083
0.089
0.096
0.095
0.087
0.078
0.066
0.072
0.068
22.1
22.3
26.4
27.2
26.9
24.1
18.8
7.8
-3.7
-17.5
-31.2
-46.7
-63.4
-81.6
-101.8
-119.4
-136.7
-146.5
-158.3
-177.5
0.822
0.808
0.743
0.733
0.704
0.671
0.626
0.562
0.503
0.453
0.415
0.389
0.391
0.386
0.420
0.481
0.574
0.660
0.659
0.673
179.7
176.5
169.2
167.2
165.4
163.3
158.0
149.5
136.4
119.1
100.0
79.4
59.1
35.4
7.6
-17.7
-36.3
-47.1
-54.7
-64.4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised May 2006
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