Siemens BC328-40 Pnp silicon af transistors (high current gain high collector current low collector-emitter saturation voltage) Datasheet

PNP Silicon AF Transistors
BC 327
BC 328
High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 337, BC 338 (NPN)
●
2
3
Type
Marking
Ordering Code
BC 327
BC 327-16
BC 327-25
BC 327-40
BC 328
BC 328-16
BC 328-25
BC 328-40
–
Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
1)
1
Pin Configuration
1
2
3
C
B
E
Package1)
TO-92
For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BC 327
BC 328
Maximum Ratings
Parameter
Symbol
Values
BC 327
BC 328
Unit
V
Collector-emitter voltage
VCE0
45
25
Collector-base voltage
VCB0
50
30
Emitter-base voltage
VEB0
Collector current
IC
800
Peak collector current
ICM
1
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TC = 66 ˚C
Ptot
625
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
5
mA
A
mA
– 65 … + 150
Thermal Resistance
Junction - ambient
Rth JA
≤
200
Junction - case1)
Rth JC
≤
135
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
K/W
BC 327
BC 328
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 327
BC 328
V(BR)CE0
Collector-base breakdown voltage
IC = 100 µA
V(BR)CB0
BC 327
BC 328
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0
Collector cutoff current
VCB = 25 V
VCB = 45 V
VCB = 25 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
ICB0
BC 328
BC 327
BC 328
BC 327
Emitter cutoff current
VEB = 4 V
IEB0
DC current gain1)
IC = 100 mA; VCE = 1 V
hFE
V
45
25
–
–
–
–
50
30
–
–
–
–
5
–
–
–
–
–
–
–
–
–
–
100
100
10
10
nA
nA
µA
µA
–
–
100
nA
–
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
100
160
250
160
250
350
250
400
630
BC 327/16; BC 328/16
BC 327/25; BC 328/25
BC 327/40; BC 328/40
60
100
170
–
–
–
–
–
–
IC = 300 mA; VCE = 1 V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VCEsat
–
–
0.7
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VBEsat
–
–
2
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
V
BC 327
BC 328
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT
–
200
–
MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
12
–
pF
Input capacitance
VEB = 0.5 V, f = 1 MHz
Cibo
–
60
–
Semiconductor Group
4
BC 327
BC 328
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load RthJA = f (tp)
Collector current IC = f (VBE)
VCE = 1 V
Collector cutoff current ICB0 = f (TA)
VCB = 45 V
Semiconductor Group
5
BC 327
BC 328
DC current gain hFE = f (IC)
VCE = 1 V
Transition frequency fT = f (IC)
f = 20 MHz, TA = 25 ˚C
Collector-emitter saturation voltage
VCEsat = f (IC)
hFE = 10
Base-emitter saturation voltage
VBEsat = f (IC)
hFE = 10
Semiconductor Group
6
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