Diodes BZT52C24 Surface mount zener diode Datasheet

BZT52C2V4 - BZT52C39
SURFACE MOUNT ZENER DIODE
Features
·
·
·
·
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
SOD-123
·
·
·
·
·
·
·
·
Maximum Ratings
Min
Max
A
3.55
3.85
B
2.55
2.85
C
1.40
1.70
D
—
1.35
E
0.55 Typical
J
G
Case: SOD-123, Plastic
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: See Below
Weight: 0.01 grams (approx.)
Ordering Information: See Page 4
a
A
B
G
E
C
0.25
—
H
0.11 Typical
J
—
0.10
a
0°
8°
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Forward Voltage (Note 2)
@ IF = 10mA
Unit
0.9
V
Pd
500
mW
RqJA
305
°C/W
Tj, TSTG
-65 to +150
°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Value
VF
Power Dissipation (Note 1)
Notes:
D
H
Mechanical Data
Dim
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
XX
YM
Marking Information
XX = Product Type Marking Code (See Page 2)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
Code
J
K
L
M
N
P
R
S
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS18004 Rev. 19 - 2
1 of 3
BZT52C2V4 - BZT52C39
Electrical Characteristics
Type
Number
@ TA = 25°C unless otherwise specified
Zener Voltage Range
(Note 2)
Marking
Code
Vz @IZT
Maximum
Reverse
Current
(Note 2)
Maximum Zener
Impedance (Note 3)
IZT
Nom (V)
Min (V)
Max (V)
mA
ZZT
@ IZT
ZZK @ IZK
W
IZK
IR
mA
uA
@ VR
Typical
Temperature
Coefficient
@ IZTC
mV/°C
Test
Current
IZTC
V
Min
Max
mA
BZT52C2V4
WX
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
W3
3.3
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V6
W4
3.6
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V9
W5
3.9
3.7
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V3
W6
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V7
W7
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
5
BZT52C5V1
W8
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
BZT52C5V6
W9
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
BZT52C6V2
WA
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
5
BZT52C6V8
WB
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
Notes:
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Ordering Information
(Note 4)
Device
Packaging
Shipping
(Type Number)-7*
SOD-123
3000/Tape & Reel
* Add “-7” to the appropriate type number in Table 1 above example: 6.2V Zener = BZT52C6V2-7.
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS18004 Rev. 19 - 2
2 of 3
BZT52C2V4 - BZT52C39
0.6
50
IZ, ZENER CURRENT (mA)
PD, POWER DISSIPATION (W)
C2V7
C3V9
C3V3
0.5
0.4
0.3
0.2
0.1
0
Tj = 25°C
40
C5V6
C4V7
C6V8
C6V2
C8V2
30
20
10
Test Current IZ
5.0mA
0
0
25
75
50
100
125
150
0
1
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
30
Tj = 25°C
10
C10
2
10
C39
Tj = 25°C
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
C12
C15
20
C18
C22
10
0
Test current IZ
2mA
C27
Test current IZ
5mA
0
C33
C36
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
8
6
4
Test Current IZ
2mA
2
0
40
10
20
30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
Tj = 25 °C
f = 1MHz
CT, TOTAL CAPACITANCE (pF)
VR = 1V
VR = 2V
100
VR = 1V
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
DS18004 Rev. 19 - 2
3 of 3
BZT52C2V4 - BZT52C39
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