BCD AZV831 Single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier Datasheet

Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
General Description
Features
The AZV831 is low bias current, low voltage
operational amplifiers which can be designed into a
wide range of applications. The AZV831 has a
quiescent current of 70μA per amplifier at 1.6V.
•
•
•
•
The AZV831 features optimal performance in low
voltage, low bias current systems. The IC can provide
rail-to-rail output swing under heavy loads. The
common-mode input voltage range could be designed
200mV exceeding the supply voltage range, thus
enables the customer to expand its application scope.
The AZV831 has a maximum input offset voltage of
2.5mV and its operating range is from 1.6V to 5.5V.
•
•
•
•
AZV831
Single Supply Voltage Range: 1.6V to 5.5V
Ultra-low Input Bias Current: 1pA (Typ.)
Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.)
Rail-to-Rail Input
VCM: 200mV beyond Rails
Rail-to-Rail Output Swing
20kΩ Load
Supply Current: 70μA
Unity Gain Stable
Gain Bandwidth Product: 1.0MHz
Slew Rate: 0.45V/μs @ VCC=5.0V
Operation Ambient Temperature Range: -40ºC
to 85ºC
AZV831 is available in SC-70-5 and SOT-23-5
packages.
Applications
•
•
•
•
Sensors
Photodiode Amplification
Battery-Powered Instrumentation
Pulse Blood Oximeter, Glucose Meter
SC-70-5
SOT-23-5
Figure 1. Package Types of AZV831
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Pin Configuration
KS/K Package
(SC-70-5/SOT-23-5)
OUTPUT
1
VEE
2
IN+
3
5
VCC
4
IN-
Figure 2. Pin Configuration of AZV831 (Top View)
Function Block Diagram
5
VCC
+
-
IN-
IN+
Class
AB
Control
4
1
OUTPUT
3
+
-
2
VEE
Figure 3. Functional Block Diagram of AZV831
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Ordering Information
AZV831
-
Circuit Type
G1: Green
Package
KS: SC-70-5
K: SOT-23-5
Blank: Tube
TR: Tape & Reel
Package
Temperature
Range
SC-70-5
-40 to 85°C
AZV831KSTR-G1
L3
Tape & Reel
SOT-23-5
-40 to 85°C
AZV831KTR-G1
G4D
Tape & Reel
Part Number
Marking ID
Packing
Type
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Power Supply Voltage
VCC
6.0
V
Differential Input Voltage
VID
6.0
V
Input Voltage
VIN
-0.3 to VCC+0.5
V
Operating Junction Temperature
TJ
150
ºC
Thermal Resistance
(Junction to Ambient)
θJA
SC-70-5
SOT-23-5
270
220
ºC /W
Storage Temperature Range
TSTG
-65 to 150
ºC
Lead Temperature (Soldering,10 Seconds)
TLEAD
260
ºC
ESD (Human Body Model)
6000
V
ESD (Machine Model)
400
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operation Ambient Temperature
Range
Nov. 2011
Symbol
Min
Max
Unit
VCC
1.6
5.5
V
TA
-40
85
ºC
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
1.6V DC Electrical Characteristics
VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
2.5
mV
Input Bias Current
IB
1.0
5.0
pA
Input Offset Current
IOS
2.0
pA
Input Common-mode Voltage Range
VCM
1.8
V
Common-mode Rejection Ratio
CMRR
Large Signal Voltage Gain
GV
Input Offset Voltage Drift
ΔVOS/ΔT
Output Voltage Swing from Rail
Output Current
VOL/VOH
Sink
Source
-0.2
VCM=-0.2V to 1.8V
55
75
dB
RL=10kΩ connect to VCC/2,
VO=0.2V to 1.4V
90
110
dB
2.0
μV/ °C
VID=0.5V, RL=1kΩ connect
to VCC/2
VID=0.5V, RL=10kΩ connect
to VCC/2
50
3
15
mV
ISINK
VOUT=VCC
8
10
ISOURCE
VOUT=0V
5
8.5
Closed-loop Output Impedance
ZOUT
f=10kHz, G=1 (Note 2)
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V, VCM=0.5V
Supply Current
30
ICC
70
VCM<VCC-1V, IOUT=0
mA
9
Ω
80
dB
70
90
μA
1.6V AC Electrical Characteristics
VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Gain Bandwidth Product
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.32
V/μs
Slew Rate
SR
G=1, 1V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, G=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
THD+N
Voltage Noise Density
en
Note 2: G is Closed-Loop Voltage Gain.
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
5
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
1.8V DC Electrical Characteristics
VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
2.5
mV
Input Bias Current
IB
1.0
5.0
pA
Input Offset Current
IOS
2.0
pA
Input Common-mode Voltage Range
VCM
2.0
V
Common-mode Rejection Ratio
CMRR
Large Signal Voltage Gain
GV
Input Offset Voltage Drift
ΔVOS/ΔT
Output Voltage Swing from Rail
Output Current
VOL/VOH
Sink
Source
-0.2
VCM=-0.2V to 2.0V
55
75
dB
RL=10kΩ connect to VCC/2,
VO=0.2V to 1.6V
90
112
dB
2.0
μV/ °C
VID=0.5V, RL=1kΩ connect
to VCC/2
VID=0.5V, RL=10kΩ connect
to VCC/2
50
3
15
mV
ISINK
VOUT=VCC
12
16
ISOURCE
VOUT=0V
10
14
Closed-loop Output Impedance
ZOUT
f=10kHz, G=1 (Note 2)
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V, VCM=0.5V
Supply Current
25
ICC
70
VCM<VCC-1V, IOUT=0
mA
9
Ω
80
dB
70
90
μA
1.8V AC Electrical Characteristics
VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Gain Bandwidth Product
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.34
V/μs
Slew Rate
SR
G=1, 1V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, G=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
THD+N
Voltage Noise Density
en
Note 2: G is Closed-Loop Voltage Gain.
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
6
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
3.0V DC Electrical Characteristics
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
2.5
mV
Input Bias Current
IB
1.0
5.0
pA
Input Offset Current
IOS
2.0
pA
Input Common-mode Voltage Range
VCM
3.3
V
Common-mode Rejection Ratio
CMRR
Large Signal Voltage Gain
GV
Input Offset Voltage Drift
VCM=-0.3V to 1.9V
62
80
VCM=-0.3V to 3.3V
58
75
90
110
95
115
RL=1kΩ connect to VCC/2,
VO=0.2V to 2.8V
RL=10kΩ connect to VCC/2,
VO=0.1V to 2.9V
VOL/VOH
Sink
Source
VIN=0.5V, RL=1kΩ connect
to VCC/2
VIN=0.5V, RL=10kΩ connect
to VCC/2
20
50
3
15
mV
ISINK
VOUT=VCC
50
60
ISOURCE
VOUT=0V
50
65
ZOUT
f=10kHz, G=1 (Note 2)
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V, VCM=0.5V
ICC
μV/ °C
2.0
Closed-loop Output Impedance
Supply Current
dB
dB
ΔVOS/ΔT
Output Voltage Swing from Rail
Output Current
-0.3
70
VCM<VCC-1V, IOUT=0
mA
9
Ω
80
dB
70
90
μA
3.0V AC Electrical Characteristics
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Gain Bandwidth Product
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.40
V/μs
Slew Rate
SR
G=1, 2V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, G=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
THD+N
Voltage Noise Density
en
Note 2: G is Closed-Loop Voltage Gain.
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
5.0V DC Electrical Characteristics
VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
2.5
mV
Input Bias Current
IB
1.0
5.0
pA
Input Offset Current
IOS
2.0
pA
Input Common-mode Voltage Range
VCM
5.3
V
Common-mode Rejection Ratio
CMRR
Large Signal Voltage Gain
GV
Input Offset Voltage Drift
VCM=-0.3V to 3.9V
70
85
VCM=-0.3V to 5.3V
65
90
80
92
85
98
RL=1kΩ connect to VCC/2,
VO=0.2V to 4.8V
RL=10kΩ connect to VCC/2,
VO=0.05V to 4.95V
VOL/VOH
Sink
Source
2.0
VIN=0.5V, RL=1kΩ connect to
VCC/2
VIN=0.5V, RL=10kΩ connect to
VCC/2
25
4
VOUT=VCC
100
150
ISOURCE
VOUT=0V
110
185
f=1kHz, G=1 (note 2)
Power Supply Rejection Ratio
PSRR
Supply Current
ICC
VCC=1.6V to 5.0V, VCM=0.5V
μV/°C
50
mV
ISINK
Closed-loop Output Impedance
dB
dB
ΔVOS/ΔT
Output Voltage Swing from Rail
Output Current
-0.3
70
VCM<VCC-1V, IOUT=0
15
mA
9
Ω
80
dB
70
90
μA
5V AC Electrical Characteristics
VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Gain Bandwidth Product
GBP
Conditions
Min Typ Max
Unit
RL=100kΩ
1.0
MHz
0.45
V/μs
Slew Rate
SR
G=1, 2V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, G=1, VIN=1VPP
RL=10kΩ,CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
THD+N
THD+N
Voltage Noise Density
en
Note 2: G is Closed-loop Voltage Gain.
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
8
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics
100
95
90
90
85
70
Supply Current (μA)
Supply Current (uA)
80
60
50
40
30
20
75
70
65
IOUT=0mA
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50
45
-40
5.5
Supply Voltage (V)
0
20
40
60
80
100
O
Figure 5. Supply Current vs. Temperature
1
1
VCC=1.6V
VCC=1.8V
0
0
Input Offset Voltage (mV)
Input Offset Voltage (mV)
-20
Temperature ( C)
Figure 4. Supply Current vs. Supply Voltage
-1
-2
-3
-4
o
TA=-40 C
o
TA=25 C
-5
-6
-0.5
No Load
VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V
60
55
10
-10
0.5
80
0.5
1.0
-2
-3
o
-4
TA=-40 C
o
TA=25 C
-5
o
TA=85 C
0.0
-1
1.5
-6
-0.5
2.0
o
TA=85 C
0.0
0.5
1.0
1.5
2.0
2.5
Input Common Mode Voltage (V)
Input Common Mode Voltage (V)
Figure 6. Offset Voltage vs. Common Mode Voltage
Figure 7. Offset Voltage vs. Common Mode Voltage
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
9
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
1
4
VCC=3.0V
VCC=5.0V
0
Input Offset Voltage (mV)
Input Offset Voltage (mV)
2
-1
-2
-3
-4
o
TA=-40 C
o
TA=25 C
-5
0
-2
o
TA=-40 C
-4
o
TA=25 C
o
TA=85 C
-6
0
1
2
3
o
TA=85 C
-6
4
Input Common Mode Voltage (V)
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
1000
VCC=1.6V, VEE=0V
10
Sink Current
Source Current
0.1
1
3
4
5
6
VCC=1.8V, VEE=0V
100
10
Sink Current
Source Current
1
10
Output Current (mA)
0.1
1
10
Output Current (mA)
Figure 10. Output Voltage vs. Output Current
Nov. 2011
2
Figure 9. Offset Voltage vs. Common Mode Voltage
100
1
1
Input Common Mode Voltage (V)
Figure 8. Offset Voltage vs. Common Mode Voltage
1000
0
Figure 11. Output Voltage vs. Output Current
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
10
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
1000
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
10000
VCC=3.0V, VEE=0V
100
10
Sink Current
Source Current
1
0.01
0.1
1
VCC=5.0V, VEE=0V
1000
100
10
Sink Current
Source Current
1
0.01
10
0.1
1
Output Current (mA)
Figure 12. Output Voltage vs. Output Current
Output Short Circuit Current (Source) (mA)
Output Short Circuit Current (Sink) (mA)
200
VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V
VEE=0V
VO short to VCC
120
100
80
60
40
20
0
-40
-20
0
20
40
100
Figure 13. Output Voltage vs. Output Current
160
140
10
Output Current (mA)
60
80
100
o
Temperature ( C)
180
VEE=0V
VO short to VEE
160
140
VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V
120
100
80
60
40
20
0
-40
-20
0
20
40
60
80
100
o
Temperature ( C)
Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
11
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
160
120
VEE=0V
VO short to VCC
VEE=0V
VO short to VEE
140
Output Short Current (Source) (mA)
Output Short Current (Sink) (mA)
100
80
60
40
20
120
100
80
60
40
20
0
0
1
2
3
4
1
5
2
3
Figure 16. Output Short Circuit Current
vs. Supply Voltage
27
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
RL=10kΩ
3.5
Positive Swing
Negative Swing
3.0
2.5
2.0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
RL=1kΩ
26
Positive Swing
Negative Swing
25
24
23
22
21
20
0.8
2.6
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Dual Supply Voltage (V)
Dual Supply Voltage (V)
Figure 18. Output Voltage Swing vs. Supply Voltage
Nov. 2011
5
Figure 17. Output Short Circuit Current
vs. Supply Voltage
4.0
1.5
0.8
4
Supply Voltage (V)
Supply Voltage (V)
Figure 19. Output Voltage Swing vs. Supply Voltage
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
12
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
48
10
VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V
VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V
36
RL=1kΩ
32
28
Positive Swing
24
Negative Swing
20
16
12
-40
-20
0
20
40
60
80
7
RL=10kΩ
6
5
4
Negative Swing
3
2
Positive Swing
1
0
-40
100
-20
o
0
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Figure 20. Output Voltage Swing vs. Temperature
Figure 21. Output Voltage Swing vs. Temperature
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
10
0
40
30
VCC=0.8V, VEE=-0.8V
-10
-20
10k
100k
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
8
0
-10
10
-20
40
30
VCC=0.8V, VEE=-0.8V
RL=100kΩ
20
10
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 22. Gain and Phase vs. Frequency
and Resistive Load
Nov. 2011
CL=100pF
CL=200pF
CL=300pF
10
20
1M
50
20
Phase Margin (Degree)
40
9
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
44
Figure 23. Gain and Phase vs. Frequency
and Capacitive Load
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
13
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
0
40
30
VCC=0.8V, VEE=-0.8V
RL=10kΩ
-10
-20
10k
100k
10
0
20
-10
10
-20
40
30
20
10
1M
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 24. Gain and Phase vs. Frequency
and Capacitive Load
Figure 25. Gain and Phase vs. Frequency
and Resistive Load
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
VCC=0.9V, VEE=-0.9V
RL=100kΩ
10
0
-10
40
30
-20
10k
100k
50
20
CL=100pF
CL=200pF
CL=300pF
10
0
20
-10
10
-20
40
30
VCC=0.9V, VEE=-0.9V
RL=10kΩ
20
10
10k
1M
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 26. Gain and Phase vs. Frequency
and Capacitive Load
Nov. 2011
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
VCC=0.9V, VEE=-0.9V
Phase Margin (Degree)
10
Open Loop Gain (dB)
CL=100pF
CL=200pF
CL=300pF
20
Phase Margin (Degree)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
Figure 27. Gain and Phase vs. Frequency
and Capacitive Load
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
14
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
0
40
30
VCC=1.5V, VEE=-1.5V
-10
-20
10k
100k
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
20
-10
10
-20
1M
30
VCC=1.5V, VEE=-1.5V
RL=100kΩ
20
10
10k
100k
Frequency (Hz)
1M
Frequency (Hz)
Figure 28. Gain and Phase vs. Frequency
and Resistive Load
Figure 29. Gain and Phase vs. Frequency
and Capacitive Load
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
40
30
VCC=1.5V, VEE=-1.5V
RL=10kΩ
-10
-20
10k
100k
20
0
-10
10
-20
1M
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
10
20
40
30
VCC=2.5V, VEE=-2.5V
20
10
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 30. Gain and Phase vs. Frequency
and Capacitive Load
Nov. 2011
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
40
Phase Margin (Degree)
10
Open Loop Gain (dB)
20
Phase Margin (Degree)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
Figure 31. Gain and Phase vs. Frequency
and Resistive Load
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
15
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
40
30
VCC=2.5V, VEE=-2.5V
RL=100kΩ
-10
-20
10k
100k
20
10
0
20
-10
10
-20
50
CL=100pF
CL=200pF
CL=300pF
40
30
VCC=2.5V, VEE=-2.5V
RL=10kΩ
Phase Margin (Degree)
100
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
20
10
1M
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 32. Gain and Phase vs. Frequency
and Capacitive Load
Figure 33. Gain and Phase vs. Frequency
and Capacitive Load
1000
10
100
1
THD (%)
Output Impedance (Ω)
VCC=1.6V to 5V
VEE=0V
10
G=1
G=10
G=100
1
100
1k
10k
G=1, RL=10kΩ, CL=100pF
VCC=0.8V,VEE=-0.8V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=2.5V,VEE=-2.5V
0.1
0.01
1E-3
0.01
100k
0.1
1
Frequency (Hz)
Output Voltage (V)
Figure 34. Output Impedance vs. Frequency
Figure 35. THD+N vs. Output Voltage
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
16
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
0.1
VCC=5.0V, VEE=0V, G=1
Input Voltage Noise (V/ Hz)
THD (%)
Bandwidth<10Hz to 22kHz
VCC=0.8V, VEE=-0.8V
VCC=0.9V, VEE=-0.9V
VCC=1.5V, VEE=-1.5V
VCC=2.5V, VEE=-2.5V
0.01
100n
VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF
1E-3
100
1k
10n
10k
Frequency (Hz)
VCC=1.6V
VEE=0V
VOUT
50mV/div
10k
Figure 37. Input Voltage Noise Density
VCC=1.8V
VEE=0V
VIN
50mV/div
VOUT
50mV/div
CL=100pF, RL=100kΩ, AV=1
CL=100pF, RL=100kΩ, AV=1
Time (2μs/div)
Time (2μs/div)
Figure 38. Small Signal Pulse Response
Nov. 2011
1k
Frequency (Hz)
Figure 36. THD+N vs. Frequency
VIN
50mV/div
100
Figure 39. Small Signal Pulse Response
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
17
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
50mV/div
VOUT
50mV/div
VIN
50mV/div
VOUT
50mV/div
CL=100pF, RL=100kΩ, AV=1
CL=100pF, RL=100kΩ, AV=1
Time (2μs/div)
Time (2μs/div)
Figure 40. Small Signal Pulse Response
VCC=1.6V
VEE=0V
VIN
500mV/div
VOUT
500mV/div
Figure 41. Small Signal Pulse Response
VCC=1.8V
VEE=0V
VIN
500mV/div
VOUT
500mV/div
CL=200pF, RL=100kΩ, AV=1
CL=200pF, RL=100kΩ, AV=1
Time (10μs/div)
Time (10μs/div)
Figure 42. Large Signal Pulse Response
Nov. 2011
VCC=5.0V
VEE=0V
Figure 43. Large Signal Pulse Response
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
18
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
1V/div
VCC=5.0V
VEE=0V
VIN
2V/div
VOUT
1V/div
VOUT
2V/div
CL=200pF, RL=100kΩ, AV=1
CL=200pF, RL=100kΩ, AV=1
Time (10μs/div)
Time (10μs/div)
Figure 44. Large Signal Pulse Response
Figure 45. Large Signal Pulse Response
VCC=1.6V
VEE=0V
VIN
500mV/div
VIN
500mV/div
VOUT
500mV/div
VOUT
500mV/div
CL=200pF, RL=10kΩ, AV=1
Nov. 2011
VCC=1.8V
VEE=0V
CL=200pF, RL=10kΩ, AV=1
Time (10μs/div)
Time (10μs/div)
Figure 46. Large Signal Pulse Response
Figure 47. Large Signal Pulse Response
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
19
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
1V/div
VIN
2V/div
VOUT
1V/div
VOUT
2V/div
CL=200pF, RL=10kΩ, AV=1
CL=200pF, RL=10kΩ, AV=1
Time (10μs/div)
Time (10μs/div)
Figure 48. Large Signal Pulse Response
VIN
VCC=2.5V
VEE=-2.5V
VIN
1V/div
Figure 49. Large Signal Pulse Response
VCC=2.5V
VEE=-2.5V
VIN
50mV/div
VOUT
VOUT
1V/div
VOUT
1V/div
CL=100pF, RL=100kΩ, AV=-50
VIN=0 to -100mV
f=1kHz, RL=10kΩ, VIN=6VPP, AV=1
Time (200μs/div)
Time (20μs/div)
Figure 50. No phase Reversal
Nov. 2011
VCC=5.0V
VEE=0V
Figure 51. Overload Recovery Time
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
20
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Typical Performance Characteristics (Continued)
VIN
50mV/div
VCC=2.5V
VEE=-2.5V
VOUT
1V/div
CL=100pF, RL=100kΩ, AV =-50,
VIN=0 to -100mV
Time (20μs/div)
Figure 52. Overload Recovery Time
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
21
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Mechanical Dimensions
SC-70-5
Unit: mm(inch)
0°
2.000(0.079)
8°
2.200(0.087)
0.150(0.006)
0.350(0.014)
0.200(0.008)
1.150(0.045)
1.350(0.053)
2.150(0.085)
2.450(0.096)
0.260(0.010)
0.460(0.018)
0.525(0.021)REF
0.650(0.026)TYP
0.000(0.000)
0.100(0.004)
1.200(0.047)
1.400(0.055)
0.080(0.003)
0.150(0.006)
0.900(0.035) 0.900(0.035)
1.000(0.039) 1.100(0.043)
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
22
Advance Datasheet
Single Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifier
AZV831
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
1.500(0.059)
1.700(0.067)
0.300(0.012)
0.600(0.024)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
Nov. 2011
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
23
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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