IXYS DSEI2X61-10P Fast recovery epitaxial diode (fred) Datasheet

DSEI 2x61
Fast Recovery
Epitaxial Diode (FRED)
VRSM
VRRM
V
V
1000
1000
IFAVM = 2x60 A
VRRM = 1000 V
trr = 35 ns
Type
DSEI 2x 61-10P
D5
Symbol
Conditions
Maximum Ratings (per diode)
IFRMS
IFAVM ①
IFRM
TVJ = TVJM
TC = 50°C; rectangular; d = 0.5
tP < 10 µs; rep. rating; pulse width limited by TVJM
100
60
800
A
A
A
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
500
A
-40...+150
150
-40...+150
°C
°C
°C
180
W
2500
3000
V~
V~
1.5 - 2.0
14 - 18
Nm
lb.in.
18
g
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque (M4)
t = 1 min
t=1s
Weight
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
IR
TVJ = 25°C VR = VRRM
TVJ = 25°C VR = 0.8 • VRRM
TVJ = 125°C VR = 0.8 • VRRM
3
0.5
14
mA
mA
mA
VF
IF = 60 A;
1.8
2.3
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.65
8.3
V
mΩ
TVJ = 150°C
TVJ = 25°C
RthJC
RthCK
0.7
0.05
Features
•
•
•
•
•
•
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
K/W
K/W
trr
IF = 1 A; -di/dt = 200 A/µs
VR = 30 V; TVJ = 25°C
35
50
ns
IRM
VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs
L ≤ 0.05 µH; TVJ = 100°C
32
36
A
dS
dA
a
Creeping distance on surface
Creeping distance in air
Allowable acceleration
min. 11.2
min. 11.2
max. 50
mm
mm
m/s²
IXYS reserves the right to change limits, test conditions and dimensions
© 2001 IXYS All rights reserved
139
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
1-2
DSEI 2x 61-10P
D5
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dimensions
Fig. 7 Transient thermal impedance junction to case.
© 2001 IXYS All rights reserved
2-2
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