Dynex DS402ST12 Rectifier diode Datasheet

DS402ST
DS402ST
Rectifier Diode
Replaces March 1998 version, DS4183-2.3
DS4183-3.0 January 2000
KEY PARAMETERS
VRRM
1400V
IF(AV)
505A
IFSM
5600A
APPLICATIONS
■ Rectification
■ Freewheel Diode
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
FEATURES
■ Double Side Cooling
■ High Surge Capability
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DS402ST14
1400
DS402ST13
1300
DS402ST12
1200
DS402ST11
1100
DS402ST10
1000
DS402ST09
900
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: T.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
505
A
IF(RMS)
RMS value
Tcase = 100oC
793
A
Continuous (direct) forward current
Tcase = 100oC
640
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 100oC
365
A
IF(RMS)
RMS value
Tcase = 100oC
573
A
Continuous (direct) forward current
Tcase = 100oC
390
A
IF
1/7
DS402ST
SURGE RATINGS
Parameter
Symbol
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
Conditions
Max.
Units
10ms half sine; Tcase = 175oC
4.5
kA
VR = 50% VRRM - 1/4 sine
101 x 103
A2s
10ms half sine; Tcase = 175oC
5.6
kA
VR = 0
155 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max.
Units
dc
-
0.08
o
Anode dc
-
0.16
o
Cathode dc
-
0.16
o
Double side
-
0.02
o
Single side
-
0.04
o
On-state (conducting)
-
185
o
Reverse (blocking)
-
175
o
Storage temperature range
-55
200
o
Clamping force
3.5
5.0
kN
Min.
Max.
Units
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 4.5kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 450A peak, Tcase = 25oC
-
1.25
V
IRRM
Peak reverse current
At VRRM, Tcase = 175oC
-
15
mA
VTO
Threshold voltage
At Tvj = 175˚C
-
0.81
V
Slope resistance
At Tvj = 175˚C
-
0.84
mΩ
rT
2/7
Parameter
DS402ST
CURVES
2000
Instantaneous forward current IF - (A)
Measured under pulse conditions
1500
Tj = 25˚C
Tj = 175˚C
1000
500
0
0.50
1.00
1.50
2.00
Instantaneous forward voltage VF - (V)
2.50
Fig. 1 Maximum (limit) forward characteristics
3/7
DS402ST
1200
dc
Half wave
1000
3 phase
Mean power dissipation - (W)
800
6 phase
600
400
200
0
0
200
400
600
Mean forward current IF(AV) - (A)
FIG 2 DISSIPATION CURVES
Fig. 2 Dissipation curves
4/7
800
DS402ST
I2t = Î2 x t
2
10
100
8
90
6
80
4
2
70
It
2
60
0
1
10
ms
1
2 3 5
10 20
I2t value - (A2s x 103)
Peak half sine forward current - (kA)
12
50
50
Cycles at 50Hz
Duration
Fig. 3 Surge (non-repetitive) forward current vs time (with 50% VRRM, Tcase = 175˚C)
Thermal impedance - (˚C/W)
1.0
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side Single side
d.c.
0.08
0.16
Halfwave
0.09
0.17
3 phase 120˚
0.12
0.20
6 phase 60˚
-
Anode side cooled
0.1
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1
10
Fig. 4 Transient thermal impedance - junction to case - (˚C/W)
5/7
DS402ST
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep
(One in each electrode)
Cathode
Ø42 max
15.0
14.0
Ø19 nom
Ø19 nom
Anode
Ø37.5 max
Nominal weight: 50g
Clamping force: 4.5kN ±10%
Package outine type code: T
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
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T
DS402ST
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4183-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
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No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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