NAIS AQV414EAZ Photomos relay Datasheet

(Standard type)
TESTING
VDE
(Reinforced type)
PhotoMOS
RELAYS
GU (General Use)-E Type
[1-Channel (Form B) Type]
,
,
4. Low-level off state leakage current
The SSR has an off state leakage current
of several milliamperes, whereas the PhotoMOS relay has only 100 pA even with
the rated load voltage of 400 V
(AQV414E).
5. Reinforced insulation 5,000 V type
also available.
More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced
insulation).
,
,
6.4±0.05
.252±.002
8.8±0.05
.346±.002
Cross section of the normally-closed type of
power MOS
3.9±0.2
.154±.008
Passivation membrane
Intermediate
Source electrode Gate electrode
insulating
membrane
6.4±0.05
.252±.002
8.8±0.05
.346±.002
3.6±0.2
.142±.008
N+
P+
N+
N+
P+
N+
Gate
oxidation
membrane
N–
Drain
electrode
mm inch
N+
1
6
2
5
3
2. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
3. High sensitivity, low ON resistance
Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18 Ω (AQV410EH). Stable
operation because there are no metallic
contact parts.
4
FEATURES
1. Low on resistance for normallyclosed type
This has been realized thanks to the builtin MOSFET processed by our proprietary
method, DSD (Double-diffused and Selective Doping) method.
TYPICAL APPLICATIONS
• Security equipment
• Telepone equipment (Dial pulse)
• Measuring equipment
TYPES
Part No.
Output rating*
Type
AC/DC
type
I/O isolation
voltage
Through hole
terminal
Packing quantity
Surface-mount terminal
Tape and reel packing style
Picked from the Picked from the
1/2/3-pin side
4/5/6-pin side
Load
voltage
Load
current
1,500 V AC
(Standard)
400 V
120 mA
AQV414E
AQV414EA
AQV414EAX
AQV414EAZ
5,000 V AC
(Reinforced)
350 V
400 V
130 mA
120 mA
AQV410EH
AQV414EH
AQV410EHA
AQV414EHA
AQV410EHAX
AQV414EHAX
AQV410EHAZ
AQV414EHAZ
Tube packing style
Tube
Tape and reel
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
*Indicate the peak AC and DC values.
Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal.
RATING
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item
Input
LED forward current
LED reverse voltage
Peak forwrd current
Power dissipation
Load voltage (peak AC)
Continuous load current
Symbol
IF
VR
IFP
Pin
VL
IL
Output
Peak load current
Ipeak
Power dissipation
Total power dissipation
I/O isolation voltage
Pout
PT
Viso
Temperature
limits
Type of
connection
A
B
C
AQV414E(A)
AQV410EH(A) AQV414EH(A)
400 V
0.12 A
0.13 A
0.15 A
50 mA
3V
1A
75 mW
350 V
0.13 A
0.15 A
0.17 A
400 V
0.12 A
0.13 A
0.15 A
0.3 A
0.4 A
0.3 A
1,500 V AC
500 mW
550 mW
5,000 V AC
5,000 V AC
Remarks
f = 100 Hz, Duty factor = 0.1%
Operating
Topr
–40°C to +85°C –40°F to +185°F
Storage
Tstg
–40°C to +100°C –40°F to +212°F
A connection: Peak AC, DC
B,C connection: DC
A connection: 100 ms (1 shot),
VL = DC
Non-condensing at low
temperatures
125
AQV414E, AQV41❍EH
2. Electrical characteristics (Ambient temperature: 25°C 77°F)
Type of
Symbol connection
Item
LED operate (OFF) current
Input
LED reverse (ON) current
LED dropout voltage
Typical
Maximum
Minimum
Typical
Typical
Maximum
Typical
Maximum
AQV414E(A)
Maximum
Output
IFon
—
VF
—
Ron
A
50 Ω
Ron
B
Ron
C
ILeak
Switching
speed
Transfer
characteristics
Operate
(OFF) time*
Reverse
(ON) time*
Typical
Maximum
Typical
Maximum
Condition
IL= Max.
IL= Max.
IF= 5 mA
10 Ω
6.5 Ω
10 Ω
12.5 Ω
8.8 Ω
12.5 Ω
—
1 µA
10 µA
10 µA
IF = 0 mA
IL= Max.
Within 1 s on time
IF= 0 mA
IL= Max.
Within 1 s on time
IF= 0 mA
IL= Max.
Within 1 s on time
IF= 5 mA
VL = Max.
Toff
—
0.7 ms
2.0 ms
1.5 ms
3.0 ms
1.3 ms
3.0 ms
IF = 0 mA ➝ 5 mA
IL = Max.
Ton
—
0.1 ms
1.0 ms
0.3 ms
1.5 ms
0.3 ms
1.5 ms
IF= 5 mA ➝ 0 mA
IL = Max.
0.8 pF
0.8 pF
1.5 pF
0.8 pF
f = 1 MHz
VB = 0
Maximum
Maximum
1.9 mA
1.75 mA
3.0 mA
0.3 mA
0.4 mA
0.3 mA
1.40 mA
1.8 mA
1.70 mA
1.14 V (1.25 V at IF= 50 mA)
1.5 V
26 Ω
18 Ω
25.2 Ω
—
Typical
Off state leakage current
1.45 mA
IFoff
Typical
On resistance
AQV410EH(A) AQV414EH(A)
I/O capacitance
Typical
Maximum
Ciso
—
Initial I/O isolation
resistance
Minimum
Riso
—
35 Ω
50 Ω
20 Ω
13 Ω
19 Ω
25 Ω
17.5 Ω
25 Ω
1,000 MΩ
500 V DC
Note: Recommendable LED forward current
Standard type IF = 5 mA
Reinforced type IF = 5 to 10 mA
*Operate/Reverse time
For type of connection, see Page 32.
Input
Output
10%
90%
Toff
Ton
■ For Dimensions, see Page 27.
■ For Schematic and Wiring Diagrams, see Page 32.
■ For Cautions for Use, see Page 36.
REFERENCE DATA
1. Load current vs. ambient temperature characteristics
2. On resistance vs. ambient temperature characteristics
3. Operate (OFF) time vs. ambient temperature
characteristics
Allowable ambient temperature: –40°C to +85°C
–40°F to +185°F
Type of connection: A
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
LED current: 5mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
AQV414E(H)
100
80
60
5.0
40
30
AQV414(EH)
20
40
AQV410EH
Operate (OFF) time, ms
Load current, mA
120
50
AQV410EH
On resistance, Ω
140
4.0
AQV410EH
AQV414EH
3.0
2.0
10
1.0
0
0
20
AQV414E
0
–40 –20
126
0
20
40
60
80 85 100
Ambient temperature, °C
–40
–20
0
20 40
60 8085
Ambient temperature, °C
–40
–20
0
20 40
60
80 85
Ambient temperature, °C
AQV414E, AQV41❍EH
4. Reverse (ON) time vs. ambient temperature
characteristics
5. LED operate (OFF) current vs. ambient temperature characteristics
6. LED reverse (ON) current vs. ambient temperature characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
AQV410EH
AQV414EH
0.4
0.2
AQV414E
0
–40 –20
4
AQV410EH
AQV414EH
3
2
AQV414E
–40
–20
8. Voltage vs. current characteristics of output
at MOS portion
LED current: 5 to 50 mA
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
Current, mA
LED dropout voltage, V
140
AQV410EH
120
100
AQV414EH
80
60
AQV414E
40
20
–3 –2.5 –2 –1.5 –1 –0.5
0.5 1 1.5 2 2.5 3
–20
Voltage, V
–40
–60
–80
–100
–120
–140
1.4
1.3
1.2
50mA
30mA
20mA
10mA
5mA
1.1
1.0
0
–40
–20
0
20
40 60
80 85
Ambient temperature, °C
AQV410EH
3
AQV414EH
2
0
0
20
40
60
8085
Ambient temperature, °C
7. LED dropout voltage vs. ambient temperature characteristics
1.5
4
AQV414E
1
1
0
0
20 40
60
80 85
Ambient temperature, °C
LED reverse (ON) current, mA
0.6
5
5
–40 –20
0
20
40
60
80 85
Ambient temperature, °C
9. Off state leakage current
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C 77°F
Off state leakage current, A
LED operate (OFF) curremt, mA
Reverse (ON) time, ms
0.8
10 –3
10 –6
10 –9
10 –12
0
20
40
60
80
Load voltage, V
100
10. LED forward current vs. operate (OFF) time
characteristics
11. LED forward current vs. reverse (ON) time
characteristics
12. Applied voltage vs. output capacitance
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C 77°F
0.5
AQV410EH
AQV414EH
6.0
4.0
2.0
0
5/7/2001
120
Output capacitance, pF
8.0
Reverse (ON) time, ms
Operate (OFF) time, ms
10.0
AQV414EH
0.4
AQV410EH
0.3
0.2
AQV414E
0.1
10
AQV414E
50
20
30
40
LED forward current, mA
0
100
80
60
40
20
0
10
20
30
40
50
LED forward current, mA
60
0
10
20
30
40
50
Applied voltage, V
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