SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D2PAK-5L D D Automotive D Industrial T1 D1 G D2 T2 1 2 3 4 5 S G D T1 S T2 N-Channel MOSFET Ordering Information: SUM60N04-05LT ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)d TC = 25_C TC = 100_C Pulsed Drain Current ID 60a 250 Continous Diode Current (Diode Conduction)d IS 60a Avalanche Current IAR 60a Repetitive Avalanche L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_C Operating Junction and Storage Temperature Range EAR PD V 60a IDM Energyb Unit 180 200c 3.75d A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case PCB Mountd RthJA 40 RthJC 0.75 _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71747 S-40862—Rev. C, 03-May-04 www.vishay.com 1 SUM60N04-05LT Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, IDS = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea IDSS ID(on) rDS(on) DS( ) 3 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 500 VDS = 5 V, VGS = 10 V 120 VGS = 10 V, ID = 60 A 0.0035 0.0045 VGS = 4.5 V, ID = 20 A 0.0051 0.0065 VGS = 10 V, ID = 60 A, TJ = 125_C 0.0069 Sense Diode Forward Voltage Increase Forward Transconductancea mA m W 0.0086 IF = 50 mA 655 715 IF = 25 mA 600 660 DVF From IF = 25 mA to IF = 50 mA 30 gfs VDS = 15 V, ID = 20 A VFD1 and VFD2 nA A VGS = 10 V, ID = 60 A, TJ = 175_C Sense Diode Forward Voltage V mV 80 35 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 700 Total Gate Chargec Qg 130 Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 6000 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 20 V,, VGS = 10 V,, ID = 25 A 1100 pF 25 nC Qgd 40 td(on) 15 20 tr VDD = 20 V, RL = 0.8 W 80 120 td(off) ID ] 25 A, VGEN = 10 V, Rg = 2.5 W 100 150 100 150 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 60 Pulsed Current ISM 200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 60 A, VGS = 0 V trr IRM(REC) Qrr IF = 60 A,, di/dt = 100 A/ms m A 1.0 1.5 V 60 90 ns 2.1 4 A 0.065 0.18 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71747 S-40862—Rev. C, 03-May-04 SUM60N04-05LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 6 V 5V 200 I D − Drain Current (A) I D − Drain Current (A) 200 150 100 4V 50 150 100 TC = 125_C 50 25_C −55_C 3V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.015 TC = −55_C 25_C 0.012 rDS(on) − On-Resiistance (Normalized) g fs − Transconductance (S) 160 125_C 120 80 40 0.009 VGS = 4.5 V 0.006 VGS = 10 V 0.003 0 0.000 0 20 40 60 80 100 120 0 20 40 VGS − Gate-to-Source Voltage (V) Ciss 6000 4000 Coss 2000 100 120 200 240 Gate Charge 20 V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 8000 80 ID − Drain Current (A) Capacitance 10000 60 Crss 0 VGS = 20 V ID = 25 A 16 12 8 4 0 0 8 16 24 32 VDS − Drain-to-Source Voltage (V) Document Number: 71747 S-40862—Rev. C, 03-May-04 40 0 40 80 120 160 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM60N04-05LT Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 25 A 1.6 I S − Source Current (A) r DS(on) − On-Resistance (W) (Normalized) 2.0 1.2 0.8 0.4 0.0 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 10 TJ = 25_C 1 175 0 0.2 0.4 TJ − Junction Temperature (_C) 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 0.6 55 52 ID = 1 mA V (BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 150_C 10 49 46 1 IAV (A) @ TA = 25_C 43 40 −50 0.1 0.00001 0.0001 0.01 0.001 0.1 1 tin (Sec) 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Sense Diode Forward Voltage vs. Temperature 1.0 −25 Sense Diode Forward Voltage 0.01 0.8 0.001 TJ = 150_C 0.6 I F (V) I F (V) ID = 50 mA ID = 25 mA 0.4 TJ = 25_C 0.00001 0.2 0.0 0 25 50 75 100 TJ − Junction Temperature (_C) www.vishay.com 4 0.0001 125 150 0.000001 0 0.25 0.5 0.75 1.0 1.25 1.5 VF (V) Document Number: 71747 S-40862—Rev. C, 03-May-04 SUM60N04-05LT Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 60 Limited by rDS(on) 50 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 70 40 30 20 0 100 ms 100 1 ms 10 ms 100 ms dc 10 1 10 10 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 71747 S-40862—Rev. C, 03-May-04 www.vishay.com 5