Diodes DMTH6005LPS-13 N-channel enhancement mode mosfet Datasheet

DMTH6005LPS
Green
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features

BVDSS
RDS(ON) max
60V
5.5mΩ @ VGS = 10V
ID
TC = +25°C
(Note 9)
100A

Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching – ensures more reliable and
robust end application
Low RDS(ON) – minimizes power losses
Low Qg – minimizes switching losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH6005LPSQ)
Description and Applications






This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data





High Frequency Switching
Sync. Rectification
DCDC Converters



®
Case: PowerDI 5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
Pin1
Bottom View
Top View
Internal Schematic
S
D
S
D
S
D
G
D
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number
DMTH6005LPS-13
Notes:
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
= Manufacturer’s Marking
H6005LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 18 = 2018)
WW = Week (01 to 53)
H6005LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
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February 2018
© Diodes Incorporated
DMTH6005LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
TA = +25C
TA = +70C
TC = +25C
(Note 9)
TC = +100C
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Value
60
±20
20.6
17.2
ID
A
100
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH
Avalanche Energy, L = 1mH
Unit
V
V
A
IS
IDM
IAS
EAS
90
100
160
14.8
98
A
A
A
mJ
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
3.2
47
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
TA = +25C
TC = +25C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
—
4.4
5.7
7.7
0.9
3
5.5
7.2
10
—
V
Static Drain-Source On-Resistance
1
—
—
—
—
VDS = VGS, ID = 250μA
VGS = 10V, ID = 50A
VGS = 6V, ID = 20A
VGS = 4.5V, ID = 12.5A
VGS = 0V, IS = 50A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
—
—
—
—
—
—
—
—
—
—
—
—
—
2962
965.2
59.8
0.66
47.1
23.1
10.2
12.5
8.3
9.4
22
8.9
40.4
—
—
—
—
—
—
—
—
—
—
—
—
—
QRR
—
49.7
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDD = 30V, ID = 50A
ns
VDD = 30V, VGS = 10V,
ID = 30A, RG = 3.3Ω
ns
nC
IF = 30A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
2 of 7
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February 2018
© Diodes Incorporated
DMTH6005LPS
50.0
30
VDS = 5V
VGS = 4.0V
40.0
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 10.0V
VGS = 6.0V
VGS = 5.0V
VGS = 4.5V
30.0
20.0
VGS = 3.5V
10.0
20
15
10
125oC
85oC
150oC
5
25oC
175oC
-55oC
VGS = 3.0V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
1
5
2
0.009
VGS = 4.5V
0.007
0.006
VGS = 6.0V
0.005
0.004
VGS = 10V
0.003
0.002
0.001
0
5
10
15
20
25
30
35
40
45
50
0.05
0.04
0.03
ID = 50A
0.02
ID = 20A
0.01
ID = 12.5A
0
0
4
150oC
175oC
0.008
0.007
0.006
125oC
0.005
85oC
0.004
25oC
0.003
-55oC
0.002
0.001
0
10
20
30
40
50
60
70
80
90
100
16
20
2
1.8
1.6
VGS = 10V, ID = 50A
1.4
1.2
1
VGS = 4.5V, ID = 12.5A
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Document number: DS38151 Rev. 4 - 2
12
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DMTH6005LPS
8
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.01
0.009
6
0.06
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS = 10V
5
VGS, GATE-SOURCE VOLTAGE (V)
0.01
0.008
4
Figure 2. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
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Figure 6. On-Resistance Variation with Junction
Temperature
February 2018
© Diodes Incorporated
0.014
0.012
VGS = 4.5V, ID = 12.5A
0.01
0.008
0.006
0.004
VGS = 10V, ID = 50A
0.002
0
-50
-25
0
25
50
75
4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMTH6005LPS
3.5
3
ID = 1mA
2.5
2
ID = 250µA
1.5
1
0.5
0
100 125 150 175
-50
25
50
75
100 125 150 175
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100
10000
CT, JUNCTION CAPACITANCE (pF)
VGS = 0V
90
80
70
60
50
TJ = 85oC
TJ = 125oC
40
TJ = 150oC
30
TJ = 25oC
TJ = 175oC
20
TJ = -55oC
10
f = 1MHz
Ciss
1000
Coss
100
Crss
10
0
0
0.3
0.6
0.9
1.2
0
1.5
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
1000
10
PW = 1µs
RDS(ON)
Limited
9
7
6
5
4
VDS = 30V, ID = 50A
3
100
ID, DRAIN CURRENT (A)
8
VGS (V)
0
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
IS, SOURCE CURRENT (A)
-25
2
10
PW = 100µs
1
0.1
1
0
PW = 10µs
TJ(Max) = 175℃
TC = 25℃
Single Pulse
DUT on Infinite
Heatsink
VGS = 10V
PW = 1ms
PW = 10ms
PW = 100ms
PW = 1s
0.01
0
5
10
15
20
25
30
35
40
45
50
Qg (nC)
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
4 of 7
www.diodes.com
0.1
100
February 2018
© Diodes Incorporated
DMTH6005LPS
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJC(t) = r(t) * RθJC
RθJC = 1℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
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February 2018
© Diodes Incorporated
DMTH6005LPS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
D
Detail A
D1
0(4X)
c
A1
E1 E
e
01 (4X)
1
b (8X)
e/2
1
L
b2 (4X)
D3
A
K
D2
E3 E2
M
b3 (4X)
M1
Detail A
L1
G
PowerDI5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0.00
0.05

b
0.33
0.51
0.41
b2
0.200
0.350 0.273
b3
0.40
0.80
0.60
c
0.230
0.330 0.277
D
5.15 BSC
D1
4.70
5.10
4.90
D2
3.70
4.10
3.90
D3
3.90
4.30
4.10
E
6.15 BSC
E1
5.60
6.00
5.80
E2
3.28
3.68
3.48
E3
3.99
4.39
4.19
e
1.27 BSC
G
0.51
0.71
0.61
K
0.51


L
0.51
0.71
0.61
L1
0.100
0.200 0.175
M
3.235
4.035 3.635
M1
1.00
1.40
1.21
Θ
10°
12°
11°
Θ1
6°
8°
7°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
X4
Y2
X3
Y3
Y5
Y1
X2
Y4
X1
Y7
Y6
G1
C
X
DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
G
Y(4x)
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Dimensions
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
February 2018
© Diodes Incorporated
DMTH6005LPS
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2018, Diodes Incorporated
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DMTH6005LPS
Document number: DS38151 Rev. 4 - 2
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February 2018
© Diodes Incorporated
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