BF1009S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Drain AGC RF Input G2 G1 RF Output + DC GND ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF1009S SOT143 1=S 2=D 3=G2 4=G1 - - JLs BF1009SR SOT143R 1=D 2=S 3=G1 4=G2 - - JLs Maximum Ratings Parameter Symbol Drain-source voltage VDS 12 V Continuous drain current ID 25 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 3 Total power dissipation Ptot 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value Unit V mW TS ≤ 76 °C, BF1009S, BF1009SR 1Pb-containing °C package may be available upon special request Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20 BF1009S... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point 1) Rthchs ≤ 370 K/W Values Unit BF1009S, BF1009SR Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 9 - 12 ±V (BR)G2SS 9 - 12 +IG1SS - - 60 µA ±IG2SS - - 50 nA IDSS - - 500 µA IDSO 10 13 16 mA - 0.9 - DC Characteristics Drain-source breakdown voltage V ID = 500 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V Operating current (selfbiased) VDS = 9 V, VG2S = 6 V Gate2-source pinch-off voltage VG2S(p) V VDS = 9 V, I D = 500 µA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF1009S... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values AC Characteristics Unit min. typ. max. 26 30 - mS Cg1ss - 2.1 2.7 pF Cdss - 0.9 - 18 22 - dB - 1.4 2.1 dB 40 50 - (verified by random sampling) Forward transconductance gfs VDS = 9 V, V G2S = 6 V Gate1 input capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Output capacitance VDS = 9 V, V G2S = 6 V, f = 10 MHz Power gain (self biased) Gp VDS = 9 V, V G2S = 6 V, f = 800 MHz Noise figure F VDS = 9 V, V G2S = 6 V, f = 800 MHz ∆G p Gain control range VDS = 9 V, V G2S = 6 ... 0 V, f = 800 MHz 3 2007-04-20 BF1009S... Total power dissipation Ptot = ƒ(TS) BF1009S, BF1009SR Drain current ID = ƒ(V G2S) VDS = 9 V 220 14 mA mW 12 180 160 10 140 9 ID P tot 11 8 120 7 100 6 80 5 60 4 3 40 2 20 0 0 1 15 30 45 60 75 90 105 120 °C 0 0 150 1 2 3 4 V TS Insertion power gain Forward transfer admittance |S21|² = ƒ(VG2S), f = 200 MHz |Y21| = ƒ(VG2S), f = 200 MHz 15 32 dB mS 24 lY21 l lS21 l -5 -15 20 -25 16 -35 12 -45 8 -55 4 -65 0 6 VG2S 1 2 3 4 V 0 0 6 VG2S 1 2 3 4 V 6 VG2S 4 2007-04-20 BF1009S... Gate 1 input capacitance Cg1ss= ƒ(Vg2s) f = 200 MHz Output capacitance C dss = ƒ(VG2S) f = 200 MHz 3 3 pF 2.4 2.4 2.2 2.2 Cdss Cg1ss pF 2 1.8 2 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 1 2 3 4 V 0 0 6 VG2S 1 2 3 4 V 6 VG2S 5 2007-04-20 Package SOT143 BF1009S... 2 0.1 MAX. 10˚ MAX. 1 1 ±0.1 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 A 5 0...8˚ 0.2 M A 0.25 M B 1.7 0.08...0.1 1.3 ±0.1 3 2.4 ±0.15 4 B 10˚ MAX. 2.9 ±0.1 1.9 0.15 MIN. Package Outline Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout (Example) RF s 56 Manufacturer Pin 1 2005, June Date code (YM) BFP181 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 6 2007-04-20 Package SOT143R BF1009S... Package Outline 2 0.2 0.08...0.15 A +0.1 0.8 -0.05 0.4 +0.1 -0.05 0˚... 8˚ 1.7 0.25 10˚ MAX. 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1.9 4 1 ±0.1 0.15 MIN. 2.9 ±0.1 M 0.2 M A B Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 1.2 Marking Layout (Example) Reverse bar 2005, June Date code (YM) Pin 1 Manufacturer BFP181R Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 7 2007-04-20 BF1009S... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-20