MICROWAVE POWER GaAs FET TIM1314-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 13.75GHz to 14.5GHz n LOW INTERMODULATION DISTORTION IM3(Min.)=−25dBc at Po=38.0dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain SYMBOL P1dB Compression Point Power Gain at 1dB Gain G1dB Compression Point Drain Current IDS1 Power Added Efficiency ηadd 3rd Order Intermodulation IM3 Distortion Drain Current Channel Temperature Rise CONDITIONS VDS= 10V IDSset≅7.0A f = 13.75 to 14.5GHz Two-Tone Test UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 4.0 5.0 A 10.0 11.0 % 22 dBc -25 A °C 9.0 10.1 100 UNIT MIN. S 5.5 V -0.7 -2.0 -4.5 A 20.0 V -5 °C/W 1.1 Po= 38.0dBm IDS2 ∆Tch (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V IGS= -290µA Rth(c-c) Channel to Case TYP. MAX. u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM1314-30L ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 °C) PT W 136 Channel Temperature Tch °C 175 Storage Tstg °C -65 to +175 PACKAGE OUTLINE (7-AA03A) 0.5±0.1 2.5 MIN. Unit in mm 4 - R0.5 (1) (1) Gate (2) Source 17.4± 0.4 2.5 MIN. (2) (3) 21.9±0.3 1.6± 0.3 16.4 MAX. 4.5 MAX. +0.1 25.5 MAX. 2.4± 0.3 2.6± 0.3 (2) 0.15 -0.05 8.0± 0.2 (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2