Comchip CDBV6-54CD-G Smd schottky barrier diode array Datasheet

SMD Schottky Barrier Diode Arrays
SMD Diodes Specialist
CDBV6-54T/AD/CD/SD/BR-G
Forward Current: 0.2A
Reverse Voltage: 30V
RoHS Device
Features
SOD-363
-Low forward voltage drop.
-Fast switching.
-Ultra-small surface mount package.
-PN junction guard ring for transient and ESD
protection.
-Available in lead Free version.
0.087(2.20)
0.071(1.80)
0.053(1.35)
0.045(1.15)
Mechanical data
-Case: SOD-323, Molded Plastic
-Case material: UL 94V-0 flammability retardant
classification.
-Terminals: Solderable per MIL-STD-202, Method
208
-Marking: Orientation: See diagrams below
-Weight: 0.006 grams (approx.)
-Marking: See diagrams below
A1
C2
C2
C1
A2
A2
AC
C2
0.014(0.35)
0.006(0.15)
C1
A2
A1
A1
C2
A1
0.096(2.45)
0.085(2.15)
0.004(0.10)max
0.010(0.25)min
Dimensions in inches and (millimeters)
A2
1
C1
AC
C1
C2
C1
C2
C3
A2
AC
A1
A2
A3
1
C1
AC
A1
2
CDBV6-54AD-G*
Marking: KL6
CDBV6-54CD-G*
Marking: KL7
0.006(0.15)
0.003(0.08)
0.056(1.40)
0.047(1.20)
0.044(1.10)
0.035(0.90)
CDBV6-54SD-G*
Marking: KL8
2
CDBV6-54BR-G
Marking: KLB
CDBV6-54T-G
Marking: KLA
*Symmetrical configuration, no orientation indicator.
Maximum Rating (at T A =25 C unless otherwise noted)
O
Parameter
Symbol
Limits
Unit
V RRM
V RWM
VR
30
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
IF
200
mA
Repetitive peak forward current (Note 1)
Forward continuous current (Note 1)
I FRM
300
mA
Forward surge current (Note 1)
I FSM
600
mA
PD
200
mW
RθJA
625
T J , T STG
-65 ~ +125
@t<1.0s
Power dissipation (Note 1)
Thermal resistance, junction to ambient air (Note 1)
Operation and storage temperature range
O
C/W
O
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Parameter
Conditions
Reverse breakdown voltage (Note 2)
I R =100μA
Forward voltage
I F =0.1mA
I F =1mA
I F =10mA
I F =30mA
I F =100mA
Symbol Min Typ Max Unit
V (BR)R
VF
30
V
240
320
400
500
1000
mV
μA
Reverse leakage current (Note 2)
V R =25V
IR
2
Total capacitance
V R =1.0V, f=1.0MHz
CT
10
pF
Reverse recovery time
I F =I R =10mA to I R =1.0mA, R L =100Ω
trr
5
nS
Notes:
1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch.
2. Short duration test pulse used to minimize self-heating effect.
REV:A
QW-BA015
Page 1
SMD Schottky Barrier Diode Arrays
SMD Diodes Specialist
ELECTRICAL CHARACTERISTIC CURVES (CDBV6-54T/AD/CD/SD/BR-G)
=1
25
CO
100m
10m
O
T A =75 C
T A =25 OC
T A =0 OC
O
T A =-40 C
1m
0.1m
0
0.2
0.4
0.8
0.6
1.0
I R , Instantaneous Reverse Current (μA)
Fig.2 Reverse Characteristics
1
TA
I F , Instantaneous Forward Current (A)
Fig.1 Forward Characteristics
100
O
125 C
10
O
75 C
1
0.1
O
25 C
0.01
O
0 C
0.001
20
30
V R , Instantaneous Reverse Voltage (V)
Fig.3 Capacitance Between
Terminals Characteristics
Fig.4 Power Derating Curve
100
f=1MHz
P D , Power Dissipation (mW)
C T , Capacitance Between Terminals (pF)
10
0
V F , Instantaneous Forward Voltage (V)
10
1
200
100
0
0
5
10
15
20
25
V R , Reverse Voltage (V)
30
0
24
50
75
100
125
150
T A , Ambient Temperature ( OC)
REV:A
QW-BA015
Page 2
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