Vishay BZX384B3V9-V Small signal zener diode Datasheet

BZX384-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according
e3
to the international E 24 standard
• Standard Zener voltage tolerance is ± 5 %;
Replace "C" with "B" for ± 2 % tolerance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Power dissipation
1)
Symbol
Value
Unit
Ptot
2001)
mW
Symbol
Value
Unit
RthJA
6501)
K/W
Device on fiberglass substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Tj
150
°C
Tstg
- 65 to + 150
°C
Valid that electrodes are kept at ambient temperature
Document Number 85764
Rev. 1.6, 17-May-06
www.vishay.com
1
BZX384-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
(1)
Dynamic Resistance
Test
Current
Temperature
Test
Coefficient of Current
Zener Voltage
Reverse Leakage
Current
VZ at IZT1
rzj at IZT1
rzj at IZT2
IZT1
αVZ at IZT1
at IZT2
V
Ω
Ω
mA
-4
mA
µA
V
10 /°C
IR at VR
min
max
typ
typ
min
max
BZX384C2V4-V
W1
2.2
2.6
70 (≤ 100)
275
5
-9
-4
1
50
1
BZX384C2V7-V
W2
2.5
2.9
75 (≤ 100)
300 (≤ 600)
5
-9
-4
1
20
1
BZX384C3V0-V
W3
2.8
3.2
80 (≤ 95)
325 (≤ 600)
5
-9
-3
1
10
1
BZX384C3V3-V
W4
3.1
3.5
85 (≤ 95)
350 (≤ 600)
5
-8
-3
1
5
1
BZX384C3V6-V
W5
3.4
3.8
85 (≤ 90)
375 (≤ 600)
5
-8
-3
1
5
1
BZX384C3V9-V
W6
3.7
4.1
85 (≤ 90)
400 (≤ 600)
5
-7
-3
1
3
1
BZX384C4V3-V
W7
4
4.6
80 (≤ 90)
410 (≤ 600)
5
-6
-1
1
3
1
BZX384C4V7-V
W8
4.4
5
50 (≤ 80)
425 (≤ 500)
5
-5
2
1
3
2
BZX384C5V1-V
W9
4.8
5.4
40 (≤ 60)
400 (≤ 480)
5
-3
4
1
2
2
BZX384C5V6-V
WA
5.2
6
15 (≤ 40)
80 (≤ 400)
5
-2
6
1
1
2
BZX384C6V2-V
WB
5.8
6.6
6.0 (≤ 10)
40 (≤ 150)
5
-1
7
1
3
4
BZX384C6V8-V
WC
6.4
7.2
6.0 (≤ 15)
30 (≤ 80)
5
2
7
1
2
4
BZX384C7V5-V
WD
7
7.9
6.0 (≤ 15)
30 (≤ 80)
5
3
7
1
1
5
BZX384C8V2-V
WE
7.7
8.7
6.0 (≤ 15)
40 (≤ 80)
5
4
7
1
0.7
5
BZX384C9V1-V
WF
8.5
9.6
6.0 (≤ 15)
40 (≤ 100)
5
5
8
1
0.5
6
BZX384C10-V
WG
9.4
10.6
8.0 (≤ 20)
50 (≤ 150)
5
5
8
1
0.2
7
BZX384C11-V
WH
10.4
11.6
10 (≤ 20)
50 (≤ 150)
5
5
9
1
0.1
8
BZX384C12-V
WI
11.4
12.7
10 (≤ 25)
50 (≤ 150)
5
6
9
1
0.1
8
BZX384C13-V
WK
12.4
14.1
10 (≤ 30)
50 (≤ 170)
5
7
9
1
0.1
8
BZX384C15-V
WL
13.8
15.6
10 (≤ 30)
50 (≤ 200)
5
7
9
1
0.05
0.7 VZnom.
BZX384C16-V
WM
15.3
17.1
10 (≤ 40)
50 (≤ 200)
5
8
9.5
1
0.05
0.7 VZnom.
BZX384C18-V
WN
16.8
19.1
10 (≤ 45)
50 (≤ 225)
5
8
9.5
1
0.05
0.7 VZnom.
BZX384C20-V
WO
18.8
21.2
15 (≤ 55)
60 (≤ 225)
5
8
10
1
0.05
0.7 VZnom.
BZX384C22-V
WP
20.8
23.3
20 (≤ 55)
60 (≤ 250)
5
8
10
1
0.05
0.7 VZnom.
BZX384C24-V
WR
22.8
25.6
25 (≤ 70)
60 (≤ 250)
5
8
10
1
0.05
0.7 VZnom.
BZX384C27-V
WS
25.1
28.9
25 (≤ 80)
65 (≤ 300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384C30-V
WT
28
32
30 (≤ 80)
70 (≤ 300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384C33-V
WU
31
35
35 (≤ 80)
75 (≤ 325)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384C36-V
WW
34
38
35 (≤ 90)
80 (≤ 350)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384C39-V
WX
37
41
40 (≤ 130)
80 (≤ 350)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384C43-V
WY
40
46
45 (≤ 150)
85 (≤ 375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384C47-V
WZ
44
50
50 (≤ 170)
85 (≤ 375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384C51-V
X1
48
54
60 (≤ 180)
85 (≤ 400)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384C56-V
X2
52
60
70 (≤ 200)
100 (≤ 425)
2
9
11
0.5
0.05
0.7 VZnom.
BZX384C62-V
X3
58
66
80 (≤ 215)
100 (≤ 450)
2
9
12
0.5
0.05
0.7 VZnom.
BZX384C68-V
X4
64
72
90 (≤ 240)
150 (≤ 475)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384C75-V
X5
70
79
95 (≤ 255)
170 (≤ 500)
2
10
12
0.5
0.05
0.7 VZnom.
Measured with pulses tp = 5 ms
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2
Marking Zener Voltage
Code
Range
Document Number 85764
Rev. 1.6, 17-May-06
BZX384-V-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
Marking Zener Voltage
Code
Range
Dynamic Resistance
Test
Current
Temperature
Test
Coefficient of Current
Zener Voltage
Reverse Leakage
Current
VZ at IZT1
rzj at IZT1
rzj at IZT2
IZT1
αVZ at IZT1
atIZT2
V
Ω
Ω
mA
-4
mA
µA
V
10 /°C
IR at VR
min
max
typ
typ
min
max
BZX384B2V4-V
W1
2.35
2.45
70 (≤ 100)
275
5
-9
-4
1
50
1
BZX384B2V7-V
W2
2.65
2.75
75 (≤ 100)
300 (≤ 600)
5
-9
-4
1
20
1
BZX384B3V0-V
W3
2.94
3.06
80 (≤ 95)
325 (≤ 600)
5
-9
-3
1
10
1
BZX384B3V3-V
W4
3.23
3.37
85 (≤ 95)
350 (≤ 600)
5
-8
-3
1
5
1
1
BZX384B3V6-V
W5
3.53
3.67
85 (≤ 90)
375 (≤ 600)
5
-8
-3
1
5
BZX384B3V9-V
W6
3.82
3.98
85 (≤ 90)
400 (≤ 600)
5
-7
-3
1
3
1
BZX384B4V3-V
W7
4.21
4.39
80 (≤ 90)
410 (≤ 600)
5
-6
-1
1
3
1
BZX384B4V7-V
W8
4.61
4.79
50 (≤ 80)
425 (≤ 500)
5
-5
2
1
3
2
BZX384B5V1-V
W9
5.00
5.20
40 (≤ 60)
400 (≤ 480)
5
-3
4
1
2
2
BZX384B5V6-V
WA
5.49
5.71
15 (≤ 40)
80 (≤ 400)
5
-2
6
1
1
2
BZX384B6V2-V
WB
6.08
6.32
6.0 (≤ 10)
40 (≤ 150)
5
-1
7
1
3
4
BZX384B6V8-V
WC
6.66
6.94
6.0 (≤ 15)
30 (≤ 80)
5
2
7
1
2
4
BZX384B7V5-V
WD
7.35
7.65
6.0 (≤ 15)
30 (≤ 80)
5
3
7
1
1
5
BZX384B8V2-V
WE
8.04
8.36
6.0 (≤ 15)
40 (≤ 80)
5
4
7
1
0.7
5
BZX384B9V1-V
WF
8.92
9.28
6.0 (≤ 15)
40 (≤ 100)
5
5
8
1
0.5
6
BZX384B10-V
WG
9.80
10.2
8.0 (≤ 20)
50 (≤ 150)
5
5
8
1
0.2
7
BZX384B11-V
WH
10.8
11.2
10 (≤ 20)
50 (≤ 150)
5
5
9
1
0.1
8
BZX384B12-V
WI
11.8
12.2
10 (≤ 25)
50 (≤ 150)
5
6
9
1
0.1
8
BZX384B13-V
WK
12.7
13.3
10 (≤ 30)
50 (≤ 170)
5
7
9
1
0.1
8
BZX384B15-V
WL
14.7
15.3
10 (≤ 30)
50 (≤ 200)
5
7
9
1
0.05
0.7 VZnom.
BZX384B16-V
WM
15.7
16.3
10 (≤ 40)
50 (≤ 200)
5
8
9.5
1
0.05
0.7 VZnom.
BZX384B18-V
WN
17.6
18.4
10 (≤ 45)
50 (≤ 225)
5
8
9.5
1
0.05
0.7 VZnom.
BZX384B20-V
WO
19.6
20.4
15 (≤ 55)
60 (≤ 225)
5
8
10
1
0.05
0.7 VZnom.
BZX384B22-V
WP
21.6
22.4
20 (≤ 55)
60 (≤ 250)
5
8
10
1
0.05
0.7 VZnom.
BZX384B24-V
WR
23.5
24.5
25 (≤ 70)
60 (≤ 250)
5
8
10
1
0.05
0.7 VZnom.
BZX384B27-V
WS
26.5
27.5
25 (≤ 80)
65 (≤ 300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384B30-V
WT
29.4
30.6
30 (≤ 80)
70 (≤ 300)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384B33-V
WU
32.3
33.7
35 (≤ 80)
75 (≤ 325)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384B36-V
WW
35.3
36.7
35 (≤ 90)
80 (≤ 350)
2
8
10
0.5
0.05
0.7 VZnom.
BZX384B39-V
WX
38.2
39.8
40 (≤ 130)
80 (≤ 350)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384B43-V
WY
42.1
43.9
45 (≤ 150)
85 (≤ 375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384B47-V
WZ
46.1
47.9
50 (≤ 170)
85 (≤ 375)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384B51-V
X1
50.0
52.0
60 (≤ 180)
85 (≤ 400)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384B56-V
X2
54.9
57.1
70 (≤ 200)
100 (≤ 425)
2
9
11
0.5
0.05
0.7 VZnom.
BZX384B62-V
X3
60.8
63.2
80 (≤ 215)
100 (≤ 450)
2
9
12
0.5
0.05
0.7 VZnom.
BZX384B68-V
X4
66.6
69.4
90 (≤ 240)
150 (≤ 475)
2
10
12
0.5
0.05
0.7 VZnom.
BZX384B75-V
X5
73.5
76.5
95 (≤ 255)
170 (≤ 500)
2
10
12
0.5
0.05
0.7 VZnom.
Document Number 85764
Rev. 1.6, 17-May-06
www.vishay.com
3
BZX384-V-Series
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
mA
103
1000
IF
10
rzj
TJ = 100 °C
1
TJ = 25 °C
5
4
3
2
102
100
10-1
5
4
3
TJ = 25 °C
2
10-2
100
10-3
2.7
3.6
4.7
5.1
5
4
3
10-4
2
10-5
0
0.2
0.4
0.6
0.8
1V
VF
18114
5.6
1
0.1
2
1
5
2
5
10
18117
Figure 1. Forward characteristics
2
5
100 mA
IZ
Figure 4. Dynamic Resistance vs. Zener Current
pF
1000
mW
250
Tj = 25 °C
7
200
5
4
Ctot
VR = 1 V
3
Ptot
VR = 2 V
2
150
100
7
100
VR = 1 V
5
4
3
50
VR = 2 V
2
10
0
0
100
200 °C
1
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
10
4 5
2
100 V
3 4 5
VZ
Ω
100
TJ = 25 °C
7
5
4
3
2
5
4
0.5
102
0.2
7
5
4
3
2
0.1
rzj
0.05
0.02
0.01
15
10-3
10-2
12
2
PI
T
10-4
18
10
tp
T
6.8/8.2
6.2
1
10-1
1
10s
tp
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
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27
22
3
tp
2
18116
33
2
5
4
=0
7
5
4
3
1
10-5
3
10
10
4
3
Figure 5. Capacitance vs. Zener Voltage
°C/W
103
rthA
2
18193
Tamb
18192
0.1
18119
2
5
1
2
5
10
IZ
2
5
100 mA
Figure 6. Dynamic Resistance vs. Zener Current
Document Number 85764
Rev. 1.6, 17-May-06
BZX384-V-Series
Vishay Semiconductors
Ω
103
7
5
4
rzj
mV/°C
25
Tj = 25 °C
3
Δ VZ
ΔTj
47 + 51
43
39
36
2
20
IZ =
15
5 mA
1 mA
20 mA
10
102
7
5
5
4
3
0
2
-5
10
0.1
2
3
4 5
1
18120
2
3 4 5
3
10
4 5
2
100 V
3 4 5
VZ at IZ = 5 mA
V ≥ 27 V, I = 2 mA
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
V
Ω
103
0.8
rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
25
0.7
15
VZ at IZ = 5 mA
10
0.6
Δ VZ
102
0.5
8
0.4
5
4
3
7
0.3
2
0.2
6.2
5.9
10
0.1
5.6
5
4
3
0
negative
2
positive
5.1
-1
1
2
3
4 5
10
18121
2
3 4 5
0
100 V
Figure 8. Thermal Differential Resistance vs. Zener Voltage
20
40
60
18124
VZ at IZ = 5 mA
4.7
3.6
- 0.2
1
80
100 120 140 C
Tj
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
V
9
7
8
5
4
rzj
2
18135
IZ
Figure 7. Dynamic Resistance vs. Zener Current
rzth
1
10 mA
VZ at IZ = 2 mA
7
3
Δ VZ
2
51
6
5
10
43
4
7
36
3
5
4
2
3
1
2
0
Tj = 25 °C
IZ = 5 mA
1
1
2
3
18122
4 5
10
2
3 4 5
100 V
VZ
Figure 9. Dynamic Resistance vs. Zener Voltage
Document Number 85764
Rev. 1.6, 17-May-06
IZ = 2 mA
-1
0
18194
20
40
60
80 100 120
140 °C
Tj
Figure 12. Change of Zener Voltage vs. Junction Temperature
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BZX384-V-Series
Vishay Semiconductors
mA
50
mV/°C
100
Tj = 25 °C
IZ = 5 mA
Δ VZ
ΔTj
3.9
5.6
6.8
4.7
3.3
40
80
lz
8.2
60
30
40
20
20
10
Test Current IZ
5 mA
0
0
0
20
60
40
18195
80
0
100 V
VZ at IZ = 2 mA
1
V
1.6
1.2
3
4
5
6
7
8
Figure 16. Breakdown Characteristics
10
Tj = 25 °C
12
lz
1
10 V
9
VZ
mA
30
Δ VZ = rzth x IZ
IZ = 5 mA
VZ ≥ 27 V; IZ = 2 mA
1.4
2
18111
Figure 13. Temperature Dependence of Zener Voltage vs. Zener
Voltage
Δ VZ
2.7
15
20
18
0.8
22
0.6
0.4
27
10
0.2
33
Test Current IZ
5 mA
0
36
- 0.2
0
- 0.4
1
2
3
4 5
10
2
3 4 5
0
100 V
VZ at IZ = 5 mA
18196
10
Figure 17. Breakdown Characteristics
mA
10
ΔVZ = rzth x IZ
Tj = 25 °C
51
39
4
8
3
47
43
lz
Δ VZ
40 V
30
VZ
Figure 14. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
V
5
20
18112
6
IZ = 5 mA
4
2
Test Current IZ
2 mA
1
2
IZ = 2.5 mA
0
0
0
18160
20
40
60
80
100 V
VZ at IZ = 5 mA
Figure 15. Change of Zener voltage from turn-on up to the point of
thermal equilibrium vs. Zener voltage
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6
0
18191
10
20
30
40
50
60
70
80
90
100 V
VZ
Figure 18. Breakdown Characteristics
Document Number 85764
Rev. 1.6, 17-May-06
BZX384-V-Series
Vishay Semiconductors
0.1 (0.004) max
0.10 (0.004)
0.15 (0.006)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in mm (Inches): SOD323
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
foot print recommendation:
0.6 (0.024)
0.6 (0.024)
1.6 (0.063)
0.6 (0.024)
1.1 (0.043)
2.85 (0.112)
2.50 (0.098)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
cathode bar
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
Document Number 85764
Rev. 1.6, 17-May-06
www.vishay.com
7
BZX384-V-Series
Vishay Semiconductors
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2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
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It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
8
Document Number 85764
Rev. 1.6, 17-May-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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