TOSHIBA 2SK3389

2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3389
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
•
Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 70 S (typ.)
•
Low leakage current: IDSS = 100 µA (VDS = 30 V)
•
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
75
Pulse
(Note 1)
IDP
300
Drain power dissipation
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
731
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
Thermal resistance, channel to case
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
Thermal Characteristics
Characteristics
JEDEC
Symbol
Max
Unit
Rth (ch-c)
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
4
1
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 95 µH, IAR = 75 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
2002-03-04
2SK3389
Electrical Characteristics (Note 4) (Tc = 25°C)
Characteristics
Symbol
Gate leakage current
Test Condition
VGS = ±25 V, VDS = 0 V
IGSS
Drain cut-off current
Drain-source breakdown voltage
Min
Typ.
Max
Unit


±10
µA
IDSS
VDS = 30 V, VGS = 0 V


100
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30


V
Vth
VDS = 10 V, ID = 1 mA
2.0

4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 38 A

3.8
5.0
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 38 A
35
70

S
Input capacitance
Ciss

3530

Reverse transfer capacitance
Crss

570

Output capacitance
Coss

1870


10


25


20


65


62


43


19

Rise time
tr
VGS
ton
Switching time
Fall time
tf
Turn-off time
VDD ∼
− 15 V
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = 38 A
VOUT
10 V
0V
4.7 Ω
Turn-on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
RL = 0.39 Ω
Gate threshold voltage
Duty <
= 1%, tw = 10 µs
VDD ∼
− 24 V, VGS = 10 V, ID = 75 A
pF
ns
nC
Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin.
(However, while switching times are measured, please don’t connect and ground it.)
Source-Drain Ratings and Characteristics (Note 5) (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1, Note 5)
IDR1



75
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP1



300
A
Continuous drain reverse current
(Note 1, Note 5)
IDR2



1
A
Pulse drain reverse current
(Note 1, Note 5)
IDRP2



4
A
Forward voltage (diode)
VDS2F
IDR1 = 75 A, VGS = 0 V


−1.5
V
Reverse recovery time
trr
IDR = 75 A, VGS = 0 V,

120

ns
Reverse recovery charge
Qrr
dIDR/dt = 50 A/µs

180

nC
Note 5: drain, flowing current value between the S2 pin, open the S1 pin
drain, flowing current value between the S1 pin, open the S2 pin
Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin.
Marking
※ Lot Number
K3389
※
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2002-03-04
2SK3389
ID – VDS
100
80
Common source
Tc = 25°C
Pulse test
10
5.75
8
Common source
Tc = 25°C
Pulse test
8
6.5
6
160
ID
10
Drain current
5.25
60
6
(A)
5.5
(A)
ID
Drain current
ID – VDS
200
5
40
4.75
20
120
5.5
80
5
40
VGS = 4.5 V
0
0
0.2
0.4
0.6
0.8
Drain-source voltage VDS
VGS = 4.5 V
0
0
1.0
(V)
2
4
6
Drain-source voltage VDS
Common source
(V)
VDS = 10 V
Pulse test
40
Tc = 100°C
Drain-source voltage VDS
(A)
ID
Drain current
80
(V)
0.5
Common source
120
10
VDS – VGS
ID – VGS
200
160
8
−55
Tc = 25°C
0.4
Pulse test
0.3
ID = 75 A
0.2
35
0.1
15
25
0
0
2
4
6
Gate-source voltage
8
VGS
0
0
10
4
(V)
8
Gate-source voltage
Yfs – ID
(S)
Yfs
VGS
20
(V)
100
Common source
Common source
VDS = 10 V
Tc = 25°C
Pulse test
−55
25
100
Drain-source on resistance
RDS (ON) (mΩ)
Forward transfer admittance
16
RDS (ON) – ID
1000
Tc = 100°C
10
1
1
12
100
10
Drain current
ID
Pulse test
10
VGS = 10 V
15 V
1
0.1
1
1000
(A)
Drain current
3
100
10
ID
1000
(A)
2002-03-04
2SK3389
RDS (ON) – Tc
IDR – VDS
Common source
VGS = 10 V
Pulse test
Common source
35
6
ID = 70
15
4
2
0
−80
−40
Tc = 25°C
(A)
IDR
8
1000
Drain reverse current
Drain-source on resistance
RDS (ON) (m Ω)
10
0
40
80
Case temperature Tc
120
Pulse test
100
10
5
10
3
1
VGS = 0
1
0
160
0.2
(°C)
0.4
0.6
1.0
0.8
Drain-source voltage VDS
1.2
(V)
Vth – Tc
Capacitance – VDS
5
100000
Capacitance
Gate threshold voltage Vth (V)
10000
Ciss
C
(pF)
Common source
Coss
1000
Crss
100
Common source
VGS = 0 V
f = 1 MHz
VDS = 10 V
ID = 1 mA
4
Pulse test
3
2
1
Tc = 25°C
10
0
−80
100
Drain-source voltage VDS
(V)
PD – Tc
80
120
160
(°C)
Dynamic input/output characteristics
160
Drain-source voltage VDS
120
80
40
40
80
120
Case temperature Tc
160
30
(°C)
12
6
VDS
VDD = 24 V
12
20
VGS
10
0
0
200
16
Common source
ID = 75 A
Tc = 25°C
Pulse test
(V)
(V)
(W)
40
40
PD
Drain power dissipation
0
Case temperature Tc
200
10
0
−40
20
4
4
40
Total gate charge
8
60
Qg
VGS
1
Gate-source voltage
10
0.1
0
80
(nC)
2002-03-04
2SK3389
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
PDM
0.1
0.1
t
0.05
T
0.02
0.01
Duty = t/T
Rth (ch-c) = 1.0°C/W
Single
0.01
0.00001
0.0001
0.001
0.01
Pulse width
0.1
tw
1
(s)
EAS – Tch
Safe operating area
1000
1000
100
Aavalanche energy
DC operation
Tc = 25°C
10
*: Single nonrepetitive pulse
Tc = 25°C
1
Curves must be derated
linearly with increase in
temperature
0.1
0.1
EAS
1 ms *
ID max
(continuous)
ID
(A)
(mJ)
100 µs *
ID max (pulsed) *
Drain current
10
1
800
600
400
200
VDSS max
10
Drain-source voltage VDS
0
25
100
50
(V)
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
BVDSS
IAR
0V
VDD
Test circuit
RG = 25 Ω
VDD = 25 V, L = 95 µH
5
VDS
Waveform
Ε AS =


1
B VDSS

⋅ L ⋅ I2 ⋅ 
B

−
2
V
VDSS
DD


2002-03-04
2SK3389
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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2002-03-04