TOSHIBA SSM6K34TU

SSM6K34TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K34TU
High Current Switching Applications
Power Management Switch Applications
•
4.5Vdrive
•
Low on resistance:
Unit: mm
:Ron = 77 mΩ (max) (@VGS = 4.5 V)
:Ron = 50 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Rating
Unit
VDS
30
V
V
VGSS
±20
DC
ID
3
Pulse
IDP
6
PD
(Note 1)
500
mW
Gate-Source voltage
Drain current
Symbol
Drain power dissipation
A
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
1,2,5,6 : Drain
3
: Gate
4
: Source
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Drain-Source breakdown voltage
Min
Typ.
Max
V (BR) DSS
Symbol
ID = 10 mA, VGS = 0
Test Condition
30
⎯
⎯
Unit
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
⎯
⎯
10
μA
V
Drain cut-off current
IDSS
VDS = 30 V, VGS = 0
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0
⎯
⎯
±10
μA
Vth
VDS = 10 V, ID = 1 mA
1.3
⎯
2.5
V
S
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
⏐Yfs⏐
RDS (ON)
(Note2)
3.4
6.8
⎯
ID = 2 A, VGS = 4.5 V
(Note2)
⎯
58
77
ID = 2 A, VGS = 10 V
(Note2)
⎯
38
50
⎯
470
⎯
⎯
60
⎯
⎯
80
⎯
―
10
―
―
7.6
―
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Total gate charge
Qg
Gate−source charge
Qgs
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 24 V, IDS= 3.0 A
VGS = 10 V
―
2.4
―
Turn-on time
ton
VDD = 15 V, ID = 2 A,
⎯
8.3
⎯
Turn-off time
toff
VGS = 0~10 V, RG = 4.7 Ω
⎯
22
⎯
―
−0.8
−1.2
Qgd
Gate−drain charge
Switching time
VDS = 10 V, ID = 2 A
Drain-Source forward voltage
VDSF
ID = -3A, VGS = 0V
(Note2)
mΩ
pF
nC
ns
V
Note2: Pulse test
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2007-11-01
SSM6K34TU
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
10 V
OUT
10 V
0V
RG
0
10 μs
(c) VOUT
VDD
VDD = 15 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
Marking
6
90%
IN
10%
VDD
VDS (ON)
90%
10%
tr
ton
tf
toff
Equivalent Circuit (Top View)
5
4
6
5
4
3
1
2
3
KNC
1
2
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2007-11-01
SSM6K34TU
ID – VDS
ID – VDS
10
4.5
3.8
3.5
8.0
3
10
3.2
2
3.0
1
Common source
Ta = 25°C
Pulse test
8.0
3.8
6.0
4.5
8
Drain current
ID (A)
Drain current
Common source
Ta = 25°C
Pulse test
6.0
4
10
ID (A)
5
6
3.5
4
3.2
2
3.0
VGS = 2.8 V
0
0
0.4
0.2
0.6
Drain-source voltage
0.8
VDS
0
1.0
VGS = 2.8 V
0
(V)
2
1
Drain-source voltage
ID – VGS
8
Common source
Common source
Ta= 25℃
(V)
Pulse test
1.6
VDS
6
Drain-source voltage
(A)
(V)
VDS – VGS
Pulse tset
Drain current ID
VDS
2.0
VDS = 10 V
4
2
25
100
0
0
2
1
VGS
0.8
0.4
0
5
4
3
1.2
2
ID = 4A
1
Ta = −55°C
Gate-source voltage
0
(V)
2
4
8
6
Gate-source voltage
⎪Yfs⎪ – ID
VGS
10
(V)
RDS (ON) – ID
100
100
Common source
VDS = 10 V
Pulse test
Drain-source ON resistance
RDS (ON) (mΩ)
Forward transfer admittance ⎪Yfs⎪ (S)
5
4
3
Ta = −55°C
10
100
25
1
4.5
30
VGS = 10V
Common source
Ta = 25°C
0.1
0
0.3
1
3
10
0.1
10
Drain current ID (A)
Pulse test
1
10
Drain current ID (A)
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SSM6K34TU
RDS (ON) – Ta
IDR – VDS
10
120
Common source
Drain reverse current IDR (A)
Drain-source ON resistance
RDS (ON) (m Ω)
10
Pulse test
100
ID = 4A
2A
80
1A
VGS = 4.5V
60
40
VGS = 10V
ID = 4, 2, 1A
20
5.0
3.0
5
1.0
3
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse test
0
−80
−40
0
40
80
120
0.1
0
160
Ambient temperature Ta (°C)
-0.2
-0.4
-0.6
Drain-source voltage
Capacitance – VDS
-1.0
-0.8
VDS
-1.2
(V)
Vth – Ta
1000
3
Vth (V)
100
Coss
Gate threshold voltage
Capacitance C
(pF)
Ciss
Crss
10
Common source
VGS = 0 V
f = 1 MHz
2
1
VDS = 10 V
ID = 1mA
Pulse test
Ta = 25°C
1
0.1
Common source
1
0.3
3
5
10
Drain-source voltage
30 50
0
−80
100
VDS (V)
−40
0
160
rth – tw
rth (°C /W)
Common Source
ID = 3.0 A
Ta = 25°C
8
6
Transient thermal impedance
(V)
120
100
10
Gate−Source voltage VGS
80
Ambient temperature Ta (°C)
Dynamic Input Characteristic
VDD = 15V
VDD = 24V
4
2
0
40
0
2
4
Total Gate Charge
8
6
Qg
10
100
10
Single Pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
1
0.00
0.01
0.1
1
Pulse width
(nC)
4
10
tw
100
1000
(s)
2007-11-01
SSM6K34TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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