NXP CGD1042HI 1 ghz, 22 db gain gaas high output power doubler Datasheet

CGD1042HI
1 GHz, 22 dB gain GaAs high output power doubler
Rev. 01 — 21 September 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features
n
n
n
n
n
n
n
n
n
Excellent linearity
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
n Integrated ring wave surge protection
1.3 Applications
n CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise
specified.
Symbol Parameter
power gain
Gp
CTB
CCN
Itot
composite triple beat
carrier-to-composite noise
total current
Conditions
Min
Typ
Max Unit
f = 50 MHz
-
21.5 -
f = 1003 MHz
22
22.7 23.5 dB
dB
Vo = 56.4 dBmV at 1003 MHz
[1]
-
−75
−65
dBc
Vo = 56.4 dBmV at 1003 MHz
[1]
57
63
-
dBc
[2]
-
440
460
mA
[1]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2]
Direct Current (DC).
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
2. Pinning information
Table 2.
Pinning
Pin
Description
1
input
2, 3
common
Simplified outline
Graphic symbol
5
1 3 5 7 9
1
5
+VB
7, 8
common
9
output
9
2 3 7 8
sym095
3. Ordering information
Table 3.
Ordering information
Type number
CGD1042HI
Package
Name
Description
Version
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VB
supply voltage
Vi(RF)
RF input voltage
VESD
electrostatic discharge voltage
single tone
Human Body Model (HBM);
According JEDEC standard
22-A114E
Biased; According
IEC61000-4-2
Unit
-
30
V
-
75
dBmV
-
2000 V
-
1500 V
Tstg
storage temperature
−40 +100 °C
Tmb
mounting base temperature
−20 +100 °C
[1]
The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
CGD1042HI_1
Product data sheet
[1]
Min Max
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 21 September 2009
2 of 7
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
5. Characteristics
Table 5.
Characteristics
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
f = 50 MHz
-
21.5
-
dB
Gp
power gain
22
22.7
23.5
dB
SLsl
slope straight line
f = 40 MHz to 1003 MHz
[1]
0.5
-
2
dB
FL
flatness of frequency response
f = 40 MHz to 1003 MHz
[2]
-
-
1
dB
RLin
input return loss
f = 40 MHz to 160 MHz
20
-
-
dB
f = 160 MHz to 320 MHz
20
-
-
dB
f = 320 MHz to 640 MHz
19
-
-
dB
f = 640 MHz to 870 MHz
17
-
-
dB
f = 870 MHz to 1003 MHz
16
-
-
dB
f = 1003 MHz
RLout
NF
output return loss
noise figure
f = 40 MHz to 160 MHz
20
-
-
dB
f = 160 MHz to 320 MHz
20
-
-
dB
f = 320 MHz to 640 MHz
19
-
-
dB
f = 640 MHz to 870 MHz
18
-
-
dB
f = 870 MHz to 1003 MHz
17
-
-
dB
f = 50 MHz
-
4.6
5.6
dB
f = 1003 MHz
-
5.5
6.5
dB
[3]
-
440
460
mA
Vo = 56.4 dBmV at 1003 MHz
[4]
-
−75
−65
dBc
composite second-order distortion Vo = 56.4 dBmV at 1003 MHz
[4]
-
−77
−65
dBc
Vo = 56.4 dBmV at 1003 MHz
[4]
-
−68
-
dB
Vo = 56.4 dBmV at 1003 MHz
[4]
57
63
-
dBc
Vo = 58.4 dBmV at 1003 MHz
[5]
-
−70
-
dBc
composite second-order distortion Vo = 58.4 dBmV at 1003 MHz
[5]
-
−75
-
dBc
Vo = 58.4 dBmV at 1003 MHz
[5]
-
−65
-
dB
total current
Itot
79 NTSC channels + 75 digital channels
CTB
CSO
Xmod
CCN
composite triple beat
cross modulation
carrier-to-composite noise
79 NTSC channels
CTB
CSO
Xmod
composite triple beat
cross modulation
[1]
Gp at 1003 MHz minus Gp at 40 MHz.
[2]
Flatness is defined as peak deviation to straight line.
[3]
Direct Current (DC).
[4]
79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB
at 1003 MHz.
[5]
79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz.
CGD1042HI_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 21 September 2009
3 of 7
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
x M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.1
OUTLINE
VERSION
b
c
d
D
E
max. max. max.
e
e1
F
L
min.
p
4.15
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
3.85
0.38
Q
max.
q
q1
JEDEC
JEITA
U1
U2
W
w
x
EUROPEAN
PROJECTION
y
Z
max.
0.1
3.8
ISSUE DATE
99-02-06
04-02-04
SOT115J
Fig 1.
S
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
REFERENCES
IEC
q2
Package outline SOT115J
CGD1042HI_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 21 September 2009
4 of 7
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
7. Abbreviations
Table 6.
Abbreviations
Acronym
Description
CATV
Community Antenna TeleVision
ESD
ElectroStatic Discharge
GaAs
Gallium-Arsenide
NTSC
National Television Standard Committee
RF
Radio Frequency
UNC
UNified Coarse
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
CGD1042HI_1
20090921
Product data sheet
-
-
CGD1042HI_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 21 September 2009
5 of 7
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
CGD1042HI_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 21 September 2009
6 of 7
CGD1042HI
NXP Semiconductors
1 GHz, 22 dB gain GaAs high output power doubler
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
3
4
5
5
6
6
6
6
6
6
7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 21 September 2009
Document identifier: CGD1042HI_1
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