2SC5549 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5549 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuits. (guaranteed small current hFE) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V Unit: mm : hFE = 13 (min) (IC = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V VEBO 7 V IC 1 ICP 2 Base current IB 0.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Emitter-base voltage DC Collector current Pulse Storage temperature range A JEDEC TO-92MOD JEITA SC-65 TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 320 V, IE = 0 ― ― 100 µA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 µA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 400 ― ― V Collector-emitter breakdown voltage V (BR) CEO V 400 ― ― VCE = 5 V, IC = 1 mA 13 ― ― hFE (2) VCE = 5 V, IC = 0.04 A 20 ― 65 Collector-emitter saturation voltage VCE (sat) IC = 0.2 A, IB = 25 mA ― ― 1.0 V Base-emitter saturation voltage VBE (sat) IC = 0.2 A, IB = 25 mA ― ― 1.3 V ― ― 0.5 ― ― 5.0 ― ― 0.3 DC current gain Rise time tr 20 µs Fall time tstg tf Input IB2 Storage time IB1 Switching time VCC ≈ 200 V IC IB1 Output µs IB2 IB1 = 0.03 A, IB2 = −0.06 A, Duty cycle ≤ 1% 1 833 Ω IC = 10 mA, IB = 0 hFE (1) 2004-07-26 2SC5549 Marking C5549 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-26 2SC5549 IC – VCE 2 hFE – IC 1200 VCE = 5 V hFE 1.6 600 400 1.2 200 0.8 100 100 100 25 30 Ta = −55°C 10 3 50 IB = 20 mA 0.4 1 0.001 Common emitter Ta = 25°C 0 0 Common emitter 800 DC current gain IC (A) Collector current 300 1000 1400 2 4 6 8 Collector-emitter voltage 10 VCE 0.003 0.01 0.03 0.1 0.3 3 1 Collector current IC (A) 12 (V) VCE (sat) – IC VBE (sat) – IC 10 30 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter IC/IB = 8 8 −55 Ta = 100°C 6 25 4 Common emitter IC/IB = 8 10 3 1 25 Ta = −55°C 100 0.3 2 0.1 0.001 0 10 0.2 0.4 0.6 0.003 0.01 0.03 0.1 0.3 3 1 Collector current IC (A) 0.8 Collector current IC (A) VCE (sat) – IC 10 VBE (sat) – IC IC/IB = 2 8 30 6 Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter Ta = 100°C 25 4 2 0 0 −55 0.4 0.8 1.2 1.6 IC/IB = 2 10 3 Collector current IC (A) 25 Ta = −55°C 1 100 0.3 0.1 0.001 2 Common emitter 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 3 2004-07-26 2SC5549 IC – VBE Safe Operating Area 2 10 Common emitter 3 IC (A) 1.2 Collector current Collector current IC (A) VCE = 5 V 1.6 0.8 100 0.4 0 0 Ta = −55°C 25 0.4 0.8 1.2 Base-emitter voltage 1.6 VBE 2 1 10 µs* 1 ms* 0.3 DC operation Ta = 25°C 0.1 10 ms* 100 ms* 0.03 0.01 0.003 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 0.3 2.4 (V) 100 µs* IC max (pulsed)* IC max (continuous) 1 3 10 VCEO max 30 Collector-emitter voltage 4 100 VCE 300 1000 (V) 2004-07-26 2SC5549 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-26