IXYS DPG60C400HB High performance fast recovery diode low loss and soft recovery common cathode Datasheet

DPG 60 C 400 HB
V RRM =
400 V
I FAV = 2x 30 A
t rr =
45 ns
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DPG 60 C 400 HB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-247
Conditions
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
CJ
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
typ.
max.
Unit
400
V
VR = 400 V
1
µA
VR = 400 V
TVJ = 150 °C
0.2
mA
TVJ = 25 °C
1.41
V
1.69
V
1.13
V
1.46
V
TC = 135°C
30
A
TVJ = 175°C
0.76
V
IF =
30 A
IF =
60 A
IF =
30 A
IF =
60 A
rectangular
TVJ = 150 °C
d = 0.5
for power loss calculation only
R thJC
t rr
min.
TVJ = 25 °C
TVJ = 25 °C
-55
10.7
mΩ
0.95
K/W
175
°C
TC = 25 °C
160
W
t = 10 ms (50 Hz), sine
TVJ = 45°C
360
A
TVJ = 25 °C
4
A
IF =
TVJ = 125°C
8.5
A
30 A; VR = 270 V
-di F /dt = 200 A/µs
VR = 200 V; f = 1 MHz
TVJ = 25 °C
45
ns
TVJ = 125°C
85
ns
TVJ = 25 °C
39
pF
Data according to IEC 60747and per diode unless otherwise specified
20100125a
DPG 60 C 400 HB
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
50
0.25
-55
Weight
A
K/W
150
°C
6
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
g
0.8
1.2
Nm
20
120
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Part number
Logo
Marking on product
DateCode
Assembly Code
Ordering
Standard
D
P
G
60
C
400
HB
abcdef
YYWW
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
XXXXXX
Part Name
DPG 60 C 400 HB
Similar Part
DPG60C400QB
DPG80C400HB
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
=
=
=
=
=
=
=
Marking on Product
DPG60C400HB
Package
TO-3P (3)
TO-247AD (3)
Delivering Mode
Tube
Base Qty Code Key
30
505825
Voltage Class
400
400
Data according to IEC 60747and per diode unless otherwise specified
20100125a
DPG 60 C 400 HB
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
Data according to IEC 60747and per diode unless otherwise specified
20100125a
DPG 60 C 400 HB
1.0
80
20
70
IF = 60 A
30 A
15 A
0.8
60
50
IF
[A]
16
0.6
TVJ = 150°C
Qrr
40
[A]
0.4
20
8
TVJ = 125°C
VR = 270 V
0.2
25°C
12
IRR
[µC]
30
10
0.4
0.8
1.2
VF [V]
1.6
0
0
2.0
TVJ = 125°C
VR = 270 V
4
0.0
0.0
IF = 60 A
30 A
15 A
200
400
600
0
200
Fig. 2 Typ. reverse recovery charge
Qrr versus -diF /dt
Fig. 1 Forward current IF versus
forward voltage VF
140
1.6
1.4
600
Fig. 3 Typ. reverse recovery current
IRR versus -diF /dt
700
TVJ = 125°C
VR = 270 V
120
1.2
400
-diF /dt [A/µs]
-diF /dt [A/µs]
16
tfr
600
TVJ = 125°C
VR = 270 V
IF = 30 A
VFR
14
100
500
12
80
tfr 400
[ns]
300
10
1.0
trr
[ns]
Kf 0.8
0.6
60
IF = 60 A
30 A
15 A
IRR
40
0.4
Qrr
0.2
20
0.0
200
6
100
4
0
0
40
80
120
160
0
0
TVJ [°C]
Fig. 4 Dynamic parameters
Qrr, IRR versus TVJ
200
400
600
-diF /dt [A/µs]
Fig. 5 Typ. reverse recovery time
trr versus -diF /dt
50
VFR
8
0
200
400
-diF /dt [A/µs]
[V]
2
600
Fig. 6 Typ. forward recovery voltage VFR
& forward recovery time tfr vs. diF /dt
1.0
TVJ = 125°C
VR = 270 V
40
0.8
IF = 60 A
30
Erec
ZthJC
30 A
15 A
[µJ]
20
0.6
[K/W]
0.4
10
0.2
0
0.0
0
200
400
-diF /dt [A/µs]
600
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
1
10
100
t [ms]
1000
10000
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per diode unless otherwise specified
20100125a
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