Infineon BFS17P Npn silicon rf transistor Datasheet

BFS17P
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
2
3
• Pb-free (RoHS compliant) package 1)
1
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17P
Marking
MCs
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
15
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2.5
Collector current
IC
25
Peak collector current
I CM
50
Total power dissipation2)
Ptot
280
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
T stg
-65 ... 150
V
mA
TS ≤ 55 °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 3)
RthJS
≤ 340
K/W
1Pb-containing
2T
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
3For
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-03-30
BFS17P
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
15
-
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-base cutoff current
µA
ICBO
VCB = 10 V, IE = 0
-
-
0.05
VCB = 25 V, IE = 0
-
-
10
-
-
100
Emitter-base cutoff current
IEBO
VEB = 2.5 V, IC = 0
DC current gain-
-
hFE
IC = 2 mA, VCE = 1 V, pulse measured
40
-
150
IC = 25 mA, VCE = 1 V, pulse measured
20
70
-
-
0.1
0.4
Collector-emitter saturation voltage
VCEsat
V
IC = 10 mA, IB = 1 mA
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BFS17P
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
GHz
Transition frequency
fT
IC = 2 mA, VCE = 5 V, f = 200 MHz
1
1.4
-
IC = 25 mA, VCE = 5 V, f = 200 MHz
1.3
2.5
-
Ccb
-
0.55
0.8
Cce
-
0.27
-
Ceb
-
0.9
1.45
F
-
3.5
5
dB
|S21e|2
-
13
-
dB
IP3
-
21.5
-
dBm
P-1dB
-
10
-
-
Collector-base capacitance
pF
VCB = 5 V, f = 1 MHz, V BE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, V BE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Noise figure
IC = 2 mA, VCE = 5 V, ZS = 50 Ω,
f = 800 MHz
Transducer gain
IC = 20 mA, VCE = 5 V, Z S = ZL = 50Ω,
f = 500 MHz
Third order intercept point at output
VCE = 5 V, I C = 20 mA, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
1dB Compression point
IC = 20 mA, VCE = 5 V, Z S = ZL = 50Ω,
f = 800 MHz
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BFS17P
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
320
mW
K/W
RthJS
Ptot
240
200
10 2
160
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
120
80
40
0
0
15
30
45
60
75
90 105 120
10 1 -7
10
°C 150
TS
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
f = 1 MHz
10 2
1.2
1
-
10
CCB, CEB
Ptotmax /PtotDC
pF
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
0.9
0.8
0.7
CEB
0.6
CCB
0.5
0.4
0.3
0.2
0.1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
tp
2
4
6
8
10
12
14
16
V
20
VCB, VEB
4
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BFS17P
Transition frequency fT = ƒ(IC)
VCE = parameter
3
10V
GHz
5V
3V
fT
2
2V
1.5
1
1V
0.5
0.7V
0
0
5
10
15
20
mA
30
IC
5
2007-03-30
Package SOT23
BFS17P
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
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2007-03-30
BFS17P
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
7
2007-03-30
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