STMicroelectronics BD237 Complementary silicon power transistor Datasheet

BD235 BD236
BD237 BD238
®
COMPLEMENTARY SILICON POWER TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD235
BD237
PNP
BD236
BD238
V CBO
Collector-Base Voltage (I E = 0)
60
100
V CER
Collector-Base Voltage (R BE = 1KΩ)
Collector-Emitter Voltage (I B = 0)
60
100
V
V CEO
60
80
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
2
A
6
A
IC
I CM
Collector Peak Current (t p < 5 ms)
o
P tot
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
25
V
W
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
February 2003
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BD235 BD236 BD237 BD238
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CE = rated V CEO
V CE = rated V CEO
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) ∗
Typ.
T c = 150 o C
I C = 100 mA
for BD235 / BD236
for BD237 / BD238
Max.
Unit
0.1
2
mA
mA
1
mA
60
80
V
V
Collector-Emitter
Saturation Voltage
IC = 1 A
I B = 0.1 A
0.6
V
V BE ∗
Base-Emitter Voltage
IC = 1 A
V CE = 2 V
1.3
V
h FE ∗
DC Current Gain
I C = 150 mA
IC = 1 A
V CE = 2 V
V CE = 2 V
40
25
Transition frequency
I C = 250 mA
V CE = 10 V
3
I C = 150 mA
V CE = 2 V
fT
h FE1 /h FE2 ∗ Matched Pairs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/5
Min.
Derating Curve
MHz
1.6
BD235 BD236 BD237 BD238
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Base Capacitance (PNP type)
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BD235 BD236 BD237 BD238
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.425
b
0.7
0.9
0.028
0.035
b1
0.40
0.65
0.015
0.025
C
2.4
2.7
0.094
0.106
c1
1.0
1.3
0.039
0.051
D
15.4
16.0
0.606
0.630
e
2.2
0.087
e3
4.4
0.173
F
G
3.8
3
0.150
3.2
H
0.118
0.126
2.54
0.100
H2
2.15
0.084
I
1.27
0.05
O
0.3
0.011
V
o
10
10o
1: Base
2: Collector
3: Emitter
0016114/B
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BD235 BD236 BD237 BD238
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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