Diodes DMG1012T-7 N-channel enhancement mode mosfet Datasheet

DMG1012T
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
•
•
•
•
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approximate)
Drain
SOT523
D
Gate
Gate
Protection
Diode
Top View
ESD PROTECTED TO 2kV
S
G
Source
Equivalent Circuit
Top View
Ordering Information (Note 3)
Part Number
DMG1012T-7
DMG1012TQ-7
Notes:
Qualification
Commercial
Automotive
Case
SOT523
SOT523
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NA1
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
YM
2010
X
Feb
2
DMG1012T
Document number: DS31783 Rev. 3 - 2
Mar
3
NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2011
Y
Apr
4
May
5
2012
Z
Jun
6
1 of 6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
January 2012
© Diodes Incorporated
DMG1012T
Maximum Ratings @TA = 25°C unless otherwise specified
NEW PRODUCT
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4)
Steady
State
Units
V
V
IDM
Value
20
±6
0.63
0.45
6
Symbol
PD
RθJA
TJ, TSTG
Value
0.28
452
-55 to +150
Units
W
°C/W
°C
TA = 25°C
TA = 85°C
ID
Pulsed Drain Current
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
100
±1.0
V
nA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
RDS (ON)
-
|Yfs|
VSD
-
1.0
0.4
0.5
0.7
1.2
V
Static Drain-Source On-Resistance
0.3
0.4
0.5
1.4
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
-
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Ω
S
V
pF
pF
pF
pC
pC
pC
ns
ns
ns
ns
Test Condition
VDS =16V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
DMG1012T
Document number: DS31783 Rev. 3 - 2
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January 2012
© Diodes Incorporated
DMG1012T
1.5
1.5
VGS = 8.0V
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
VGS = 3.0V
VGS = 2.5V
VGS = 2.0V
0.9
0.6
VGS = 1.5V
0.3
VDS = 5V
0.9
0.6
TA = 150°C
TA = 125°C
0.3
T A = 85°C
TA = 25°C
TA = -55°C
VGS = 1.2V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
5
0.7
0.6
0.5
VGS = 1.8V
0.4
VGS = 2.5V
VGS = 4.5V
0.2
0.1
0
0
0.3
0.6
0.9
1.2
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 2.5V
ID = 500mA
VGS = 4.5V
ID = 1.0A
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG1012T
Document number: DS31783 Rev. 3 - 2
VGS = 4.5V
0.5
TA = 150°C
0.4
TA = 125°C
TA = 85°C
0.3
T A = 25°C
0.2
T A = -55°C
0.1
0
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
1.1
3
0.6
1.5
1.7
1.3
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.8
0.3
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
1.2
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0.3
0.6
0.9
1.2
1.5
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
VGS = 2.5V
ID = 500mA
0.4
VGS = 4.5V
ID = 1.0A
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
January 2012
© Diodes Incorporated
DMG1012T
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
10
1.2
0.8
ID = 250µA
0.4
8
6
T A = 25°C
4
2
0
-50
0
0.2
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
100
Ciss
C, CAPACITANCE (pF)
10
C oss
Crss
1
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
TA = 150°C
100
TA = 125°C
10
T A = 85°C
TA = 25°C
1
0
20
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
1.6
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 486°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
T J - T A = P * RθJA(t)
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
10
100
1,000
Fig. 11 Transient Thermal Response
DMG1012T
Document number: DS31783 Rev. 3 - 2
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© Diodes Incorporated
DMG1012T
Package Outline Dimensions
NEW PRODUCT
A
SOT523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50
⎯
⎯
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°
α
⎯
All Dimensions in mm
B C
G
H
K
M
N
J
L
D
Suggested Pad Layout
Y
Z
C
X
DMG1012T
Document number: DS31783 Rev. 3 - 2
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
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© Diodes Incorporated
DMG1012T
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMG1012T
Document number: DS31783 Rev. 3 - 2
6 of 6
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January 2012
© Diodes Incorporated
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