AOSMD AOB411L 60v p-channel mosfet Datasheet

AOB411L
60V P-Channel MOSFET
General Description
Product Summary
The AOB411L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
-60V
-78A
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
< 16.5mΩ
RDS(ON) (at VGS=-4.5V)
< 22mΩ
100% UIS Tested
100% Rg Tested
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
V
Avalanche Current C
IAS, IAR
-6.5
-77
Avalanche energy L=0.1mH C
EAS, EAR
296
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev 0: Mar. 2011
Steady-State
Steady-State
W
2.1
RθJA
RθJC
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W
1.3
TJ, TSTG
Symbol
t ≤ 10s
A
mJ
93
PDSM
TA=70°C
A
187
PD
TC=100°C
A
-8
IDSM
TA=70°C
±20
-55
-230
IDM
TA=25°C
Continuous Drain
Current
Units
V
-78
ID
TC=100°C
Maximum
-60
-55 to 175
Typ
11
47
0.6
°C
Max
15
60
0.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOB411L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
VDS=-60V, VGS=0V
-60
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-230
VGS=-10V, ID=-20A
TJ=125°C
VGS=-4.5V, ID=-20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current G
IS
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-20A
Units
V
TJ=55°C
Static Drain-Source On-Resistance
Max
-1
VGS(th)
RDS(ON)
Typ
µA
±100
nA
-2
-2.5
V
13.5
16.5
20.5
25
17
22
mΩ
-1
-105
V
A
48
-0.7
mΩ
S
A
4260
5330
6400
pF
335
483
630
pF
140
234
330
pF
1.4
2.8
4.2
Ω
65
83
100
nC
35
40
50
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=500A/µs
18
27
36
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
110
165
215
VGS=-10V, VDS=-30V, RL=1.5Ω,
RGEN=3Ω
15
nC
18
nC
17.5
ns
20
ns
83.5
ns
37
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar. 2011
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Page 2 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
VDS=-5V
80
-7V
-4V
60
-ID(A)
-ID (A)
100
-4.5V
-5V
-10V
40
60
40
125°C
-3.5V
20
20
VGS=-3V
0
0
1
2
3
4
25°C
0
1
5
2
20
4
5
6
Normalized On-Resistance
2
VGS=-4.5V
18
RDS(ON) (mΩ)
3
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
16
14
12
VGS=-10V
10
1.8
VGS=-10V
ID=-20A
1.6
17
5
2
VGS=-4.5V
10
I =-20A
1.4
1.2
D
1
0.8
0
5
10
15
20
25
30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
40
1.0E+02
ID=-20A
1.0E+01
35
125°C
IS (A)
RDS(ON) (mΩ)
40
1.0E+00
30
25
1.0E-01
125°C
1.0E-02
20
25°C
25°C
1.0E-03
15
1.0E-04
10
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8000
10
VDS=-30V
ID=-20A
7000
Ciss
6000
Capacitance (pF)
-VGS (Volts)
8
6
4
5000
4000
3000
Coss
2000
2
Crss
1000
0
0
0
10
20
30
40
50
60
70
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
90
30
40
50
-VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
60
TJ(Max)=175°C
TC=25°C
800
100µs
RDS(ON)
limited
Power (W)
-ID (Amps)
10µs
10µs
100.0
17
5
2
10
600
400
200
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
20
1000
1000.0
10
10
0.1
100
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0
0.0001
0.001
0.01
0.1
1
0
18
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.8°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
Rev 0: Mar. 2011
0.0001
0.001
T
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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10
100
Page 4 of 6
AOB411L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000
TA=25°C
100
TA=100°C
TA=150°C
TA=125°C
10
160
120
80
40
0
1
10
100
1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
1000
90
175
TA=25°C
80
70
60
Power (W)
Current rating ID(A)
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
50
40
30
100
17
5
2
10
10
20
10
0
0
25
50
75
100
125
150
175
1
0.01
ZθJA Normalized Transient
Thermal Resistance
10
1
1
100
0
10000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
40
RθJA=60°C/W
0.1
PD
0.01
0.001
0.01
Single Pulse
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Mar. 2011
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Page 5 of 6
AOB411L
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
VDC
-
DUT
Vgs
Rg
td(on)
td(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
VDC
-
Vgs
Vgs
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev 0: Mar. 2011
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
Vdd
-Vds
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Page 6 of 6
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