UNISONIC TECHNOLOGIES CO., DTA124E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. *Only the on / off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT 1 3 SOT-23 MARKING OUT R1 IN 2 *Pb-free plating product number:DTA124EL AC4 R2 PIN CONFIGURATION GND(+) IN PIN NO. PIN NAME 1 GND 2 IN 3 OUT OUT GND(+) ORDERING INFORMATION Order Number Normal Lead free DTA124E-AE3-R DTA124EL-AE3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing SOT-23 Tape Reel 1 QW-R206-044,B DTA124E PNP EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VCC VIN IC IO PD TJ TSTG RATINGS -50 -40 ~ +10 -100 -30 200 150 -40 ~ +150 UNIT V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER SYMBOL VI(off) Input Voltage VI(ON) Output Voltage VO(ON) Input Current II Output Current IO(off) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT *Transition frequency of the device TEST CONDITIONS VCC= -5V, IOUT= -100μA VOUT= -0.2V, IOUT= -5mA IOUT/IIN= -10mA / -0.5 mA VIN= -5V VCC= -50V , VIN=0V VOUT= -5V, IOUT= -5mA VCE= -10 V, IE= 5mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX -0.5 UNIT -0.1 -0.3 -0.36 -0.5 V mA μA 22 1 250 28.6 1.2 kΩ -3 56 15.4 0.8 V MHz 2 QW-R206-044,B DTA124E TYPICAL CHARACTERICS Fig.1 Input voltage vs.output current (ON characterristics) Fig.2 Output current vs Input voltage .(OFF characterristics) -10m -100 Vo=-0.3V -50 Output Current :Io(A) Input Voltage :V I(ON) V -10 -5 -2 T a= - 40 ℃ 25 ℃ 100 ℃ -1 Vcc=-5V -5m -20 Ta=100℃ 25℃ -40 ℃ -2m -1m -500μ -200μ -100μ -50μ -20μ -10μ -5μ -500m -200m -2μ -100m -100μ -1μ -20 0μ- 500μ -1m -2m -5m -10m -20m -50m -100m 0 200 Vo=-5V T a=100℃ 25℃ -40 ℃ -2.0 -2.5 -3.0 V lo/lI=20 -500m 100 50 20 10 5 -200m -100m T a=100℃ 25℃ -40℃ -50m -20m -10m -5m -2m 2 1 -100μ -1.5 -1 Output Voltage :V O(ON) V 500 -1.0 Fig.4Output voltage vs.output current Fig.3 DC current gain vs.output current 1k -0.5 Input Voltage :V I(OFF) Output Current :Io(A) DC Current Gain: G I ■ PNP EPITAXIAL SILICON TRANSISTOR -20 0μ -50 0μ-1m -2m -5m -10m -20m -50m -100m Output Current :Io(A) -1m -100μ -2 00μ -500 μ-1m -2m -5m -10m -20m -50m -100m Output Current :Io(A) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R206-044,B