TOSHIBA TLP599A

TLP599A
TOSHIBA Photocoupler Photo Relay
TLP599A
Telecommunication
Data Acquisition
Measurement Instrumentation
Unit in mm
The TOSHIBA TLP599A consists of a gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a six lead plastic DIP
package (DIP6).
The TLP599A is a bi−directional switch which can replace mechanical
relays in many applications.
·
Peak off−state voltage: 60V (min.)
·
On−state current: 300mA (max.) (A connection)
·
On−state resistance: 2Ω (max.) (A connection)
·
Insulation Thickness: 0.4 mm (max.)
TOSHIBA
·
Isolation voltage: 2500Vrms (min.)
Weight: 0.4 g
·
UL recognized: UL1577, file no. E67349
·
Trigger LED current (Ta = 25°C)
Classification
(Note 1)
Trigger LED Current
(mA)
@ION = 300mA
Min.
Max.
Marking Of
Classification
(IFT2)
¾
2
T2
Standard
¾
5
T2, blank
(Note 1): Application type name for certification
test, please use standard product type
name, i.e.
TLP599A (IFT2) : TLP599A
11−7A8
Pin Configuration (top view)
1
6
2
5
3
4
1. : Anode
2. : Cathode
3. : NC
4. : Drain D1
5. : Source
6. : Drain D2
Schematic
1
2
6
5
4
1
2002-09-25
TLP599A
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
Forward current derating
(Ta ≥ 25°C)
∆IF / °C
-0.5
mA / °C
Peak forward current
(100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VOFF
60
V
LED
Forward current
Off-state output terminal voltage
Detecter
A connection
On-state RMS current
300
ION
B connection
C connection
600
-3
A connection
On-state current derating
(Ta ≥ 25°C)
mA
450
∆ION / °C
-4.5
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
B connection
-6
C connection
Junction temperature
Isolation voltage (AC, 1 min.,
R.H.≤ 60%)
mA / °C
(Note 2)
(Note 2) : Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and
pins 4, 5 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VDD
¾
¾
48
V
Forward current
IF
7.5
15
25
mA
On-state current
ION
¾
¾
300
mA
Operating temperature
Topr
-20
¾
80
°C
Circuit Connections
1
6
2
5
3
4
A connection
LOAD
AC
or DC
1
6
2
5
3
4
B connection
2
LOAD
DC
1
6
2
5
3
4
LOAD
DC
C connection
2002-09-25
TLP599A
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
¾
¾
10
µA
Capacitance
CT
V = 0, f = 1 MHz
¾
30
¾
pF
Off-state current
IOFF
VOFF = 60 V
¾
¾
1
µA
Capacitance
COFF
V = 0, f = 1 MHz
¾
¾
¾
pF
Min.
Typ.
Max.
Unit
ION = 300 mA
¾
1
5
mA
ION = 300 mA,IF = 10 mA
¾
1.4
2
ION = 450 mA, IF = 10 mA
¾
0.7
1
ION = 600 mA, IF = 10 mA
¾
0.35
0.5
Min.
Typ.
Max.
Unit
0.8
¾
pF
Ω
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Trigger LED current
IFT
A connection
On-state
Resistance
RON
B connection
C connection
Test Condition
Ω
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Isolation resistance
RS
Test Condition
VS = 0, f = 1 MHz
¾
10
VS = 500 V, R.H.≤ 60%
5 ´ 10
10
¾
2500
¾
¾
AC, 1 second (in oil)
¾
5000
¾
DC, 1 minute (in oil)
¾
5000
¾
Vdc
Min.
Typ.
Max.
Unit
¾
¾
2
¾
¾
2
AC, 1 minute
Isolation voltage
BVS
14
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn-on time
ton
Turn-off time
toff
Test Condition
RL = 200Ω, VDD = 20 V
IF = 10 mA
ms
Switching Time Test Circuit
IF
VDD
1
6
IF
RL
VOUT
2
4
VOUT
90%
10%
ton
3
toff
2002-09-25
TLP599A
IF– Ta
ION (RMS)– Ta
100
C connection
(mA)
80
On-state current ION (RMS)
Allowable forward current
IF (mA)
600
60
40
20
0
-20
0
20
60
40
80
120
100
500
B connection
400
A connection
300
200
100
0
-20
Ambient temperature Ta (°C)
0
20
40
60
80
100
Ambient temperature Ta (°C)
IFP – DR
IF – VF
5000
Pulse width ≤ 100µs
Ta = 25°C
Ta = 25°C
50
IF (mA)
1000
500
300
Forward current
Allowable pulse forward current
IFP (mA)
3000
100
100
50
30
10
3
10
-3
3
10
-2
10
3
-1
3
10
0
30
10
5
3
1
0.5
0.3
0.1
0.6
Duty cycle ratio DR
0.8
1.0
Forward voltage
DVF / DTa – IF
1.4
1.6
1.8
2.6
3.0
VF (V)
IFP – VFP
1000
-2.8
-1.6
-1.2
-0.8
-0.4
0.1
0.3 0.5
1
3
Forward current
5
10
30
(mA)
-2.0
300
IFP
500
-2.4
100
Pulse forward current
Forward voltage temperature
Coefficient ,VF / ,Ta (mV / °C)
1.2
50
IF (mA)
50
30
10
Pulse width ≤ 10µs
5
Repetitive
3
Frequency = 100Hz
Ta = 25°C
1
0.6
1.0
1.4
1.8
2.2
Pulse forward voltage VFP
4
(V)
2002-09-25
TLP599A
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2002-09-25