Marktech C460EZ900-0311-2 Cree ez900 gen ii led Datasheet

Cree® EZ900™ Gen II LEDs
Data Sheet
CxxxEZ900-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications such as general illumination, automotive lighting, and LCD backlighting.
FEATURES
APPLICATIONS
●
●
EZBright LED Technology
»
380 mW min. - 450 & 460 nm
»
340 mW min - 470 nm
General Illumination
»
Aircraft
»
Decorative Lighting
●
Lambertian Radiation
●
Conductive Epoxy, Solder Paste or Preforms, or Flux
»
Task Lighting
Eutectic Attach
»
Outdoor Illumination
●
Low Forward Voltage
●
Dielectric Passivation across Epi Surface
●
White LEDs
●
LCD Backlighting
●
Projection Displays
●
Automotive
CxxxEZ900-Sxx000-2 Chip Diagram
Die Cross Section
Bottom View
Top View
.B
CPR3DX Rev
Data Sheet:
EZBright LED
880 x 880 μm2
Dielectric
Passivation
Cathodes (-)
150 x 150 μm2
Gold Bond Pads (2)
t = 170 μm
Backside Metalization
Subject to change without notice.
www.cree.com
Anode (+)
3 μm AuSn
1
Maximum Ratings at TA = 25°C Note 1
CxxxEZ900-Sxx000-2
DC Forward Current
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1250 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +125°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ900-Sxx000-2
2.9
3.3
3.8
2
20
C460EZ900-Sxx000-2
2.9
3.3
3.8
2
21
C470EZ900-Sxx000-2
2.9
3.3
3.8
2
22
Mechanical Specifications
CxxxEZ900-Sxx000-2
Description
Dimensions
Tolerance
P-N Junction Area (μm)
850 x 850
± 35
Chip Area (μm)
880 x 880
± 35
170
± 25
Chip Thickness (μm)
Top Au Bond Pad (μm) - Qty. 2
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
150 x 150
± 25
3.0
± 1.5
880 x 880
± 35
3.0
± 1.5
Notes:
Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT without an encapsulant
for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package
to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications
Note for assembly-process information.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All
measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an
integrating sphere using Illuminance E.
1.
2.
Maximum Forward Current (mA)
1200
1000
800
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
600
400
°C/W
°C/W
°C/W
°C/W
200
0
25
50
75
100
125
150
175
Ambient Temperature (˚C)
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc.
2
CPR3DX Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Standard Bins for CxxxEZ900-Sxx000-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxEZ900-Sxx000-2) orders may be filled with any or all bins (CxxxEZ900-0xxx-2)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux
C450EZ900-S38000-2
C450EZ900-0317-2
C450EZ900-0318-2
C450EZ900-0319-2
C450EZ900-0320-2
C450EZ900-0313-2
C450EZ900-0314-2
C450EZ900-0315-2
C450EZ900-0316-2
C450EZ900-0309-2
C450EZ900-0310-2
C450EZ900-0311-2
C450EZ900-0312-2
C450EZ900-0305-2
C450EZ900-0306-2
C450EZ900-0307-2
C450EZ900-0308-2
440 mW
420 mW
400 mW
380 mW
445 nm
447.5 nm
450 nm
452.5 nm
455 nm
Dominant Wavelength
Radiant Flux
C460EZ900-S38000-2
C460EZ900-0317-2
C460EZ900-0318-2
C460EZ900-0319-2
C460EZ900-0320-2
C460EZ900-0313-2
C460EZ900-0314-2
C460EZ900-0315-2
C460EZ900-0316-2
C460EZ900-0309-2
C460EZ900-0310-2
C460EZ900-0311-2
C460EZ900-0312-2
C460EZ900-0305-2
C460EZ900-0306-2
C460EZ900-0307-2
C460EZ900-0308-2
440 mW
420 mW
400 mW
380 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc.
3
CPR3DX Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Radiant Flux
Standard Bins for CxxxEZ900-Sxx000-2 (continued)
C450EZ900-S34000-2
340 mW
C450EZ900-0301-2
445 nm
C450EZ900-0302-2
447.5 nm
C450EZ900-0303-2
450 nm
C450EZ900-0304-2
452.5 nm
455 nm
Radiant Flux
Dominant Wavelength
C460EZ900-S34000-2
C460EZ900-0301-2
340 mW
455 nm
C460EZ900-0302-2
457.5 nm
C460EZ900-0303-2
460 nm
C460EZ900-0304-2
462.5 nm
465 nm
Dominant Wavelength
Radiant Flux
C470EZ900-S34000-2
C470EZ900-0313-2
C470EZ900-0314-2
C470EZ900-0315-2
C470EZ900-0316-2
C470EZ900-0309-2
C470EZ900-0310-2
C470EZ900-0311-2
C470EZ900-0312-2
C470EZ900-0305-2
C470EZ900-0306-2
C470EZ900-0307-2
C470EZ900-0308-2
C470EZ900-0301-2
C470EZ900-0302-2
C470EZ900-0303-2
C470EZ900-0304-2
420 mW
400 mW
380 mW
340 mW
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc.
4
CPR3DX Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Relati
1
0.5
0
0
250
500
750
1000
1250
If (mA)
Characteristic Curves, TA = 25°C
This is a representative measurement for the EZ900 LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Voltage Shift Vs Junction Temperature
0.000
Forward Current vs. Forward Voltage
Voltage Shift (V)
Relative Light Intensity (%)
1250
1000
If (mA)
750
500
250
0
0
1
2
3
4
-0.100
0.95
-0.150
0.9
-0.200
0.85
0.8
-0.250
0.75
-0.300
0.7
-0.350
0.65 25
0.6
5
25
75
100
125
150
50
75
100
125
150
Junction Temperature (°C)
Relative Intensity vs. Forward Current
Dominant Wavelength Shift Vs Junction Temperature
3
Dominant Wavelength Shift (nm)
6
2.5
2
1.5
1
0.5
0
0
250
500
750
1000
5
4
3
2
1
0
1250
25
If (mA)
0.000
1.5
-0.050
Voltage Shift (V)
Forward Current vs. Forward Voltage
1250
0.5
0
1000
-0.5
750-1
0
250
500
250
0
100
125
150
-0.100
-0.150
-0.200
-0.250
-0.300
-1.5
500
-2
75
Voltage Shift Vs Junction Temperature
2
1
50
Junction Temperature (°C)
Dominant Wavelength vs. Forward Current
If (mA) DW Shift (nm)
50
Junction Temperature (°C)
Vf (V)
Relative Intensity
Relative Light Intensity Vs Junction Temperature
-0.050
1
750
1000
1250
-0.350
25
If (mA)
0
1
2
50
75
100
125
150
Junction Temperature (°C)
3
4
5
Vf (V)
Dominant Wavelength Shift Vs Junction Temperature
Cree, Inc.
5
CPR3DX Rev. B
th Shift (nm)
6
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change
without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc.
5
4
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for
each chip.
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks, and EZBright. EZ900 and EZ are trademarks of Cree, Inc.
6
CPR3DX Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com
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