Vishay BAY80 Small signal switching diode, high voltage Datasheet

BAY80
Vishay Semiconductors
Small Signal Switching Diode, High Voltage
Features
• Silicon Epitaxial Planar Diode
• Lead (Pb)-free component
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
e2
Applications
• General purpose
94 9367
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Ordering code
BAY80
BAY80-TR or BAY80-TAP
Type Marking
Remarks
BAY80
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp = 1 µs
Repetitive peak forward current
Forward continuous current
Average forward current
Symbol
Value
Unit
VRRM
150
V
VR
120
V
IFSM
1
A
IFRM
625
mA
IF
250
mA
IFAV
200
mA
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air l = 4 mm, TL = constant
Junction to ambient air
Storage temperature range
Document Number 85553
Rev. 1.8, 19-Feb-07
Symbol
Value
Unit
RthJA
350
K/W
Tj
+ 175
°C
Tstg
- 65 to + 175
°C
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BAY80
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Symbol
Min
Max
Unit
IF = 0.1 mA
VF
400
Typ.
520
mV
IF = 10 mA
VF
630
780
mV
IF = 50 mA
VF
730
920
mV
IF = 100 mA
VF
780
1000
mV
mV
IF = 150 mA
VF
1070
VR = 120 V
IR
100
nA
VR = 120 V, Tj = 150 °C
IR
100
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
Differential forward resistance
IF = 10 mA
rf
5
Reverse recovery time
IF = IR = 30 mA, iR = 3 mA,
RL = 100 Ω
trr
Reverse current
150
V
5
pF
Ω
50
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
rf - Differential Forward Resistance (Ω)
I R - Reverse Current (µA)
1000
100
Scattering Limit
10
1
VR = VRRM
0.1
0.01
0
40
80
120
160
200
Tj - Junction Temperature (°C)
94 9084
1000
100
Tj = 25 °C
10
1
0.1
94 9089
Figure 1. Reverse Current vs. Junction Temperature
1
10
100
I F - Forward Current (mA)
Figure 3. Differential Forward Resistance vs. Forward Current
I F - Forward Current (mA)
1000
Tj = 25 °C
100
Scattering Limit
10
1
0.1
0
94 9085
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
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Document Number 85553
Rev. 1.8, 19-Feb-07
BAY80
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO35
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85553
Rev. 1.8, 19-Feb-07
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BAY80
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85553
Rev. 1.8, 19-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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