Rohm DTC144GKA 100ma / 50v digital transistors(with built-in resistors) Datasheet

100mA / 50V Digital transistors
(with built-in resistors)
DTC144GE / DTC144GUA / DTC144GKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
EMT3
(2)
2.0
0.9
0.2
0.3
0.7
1.25
EMT3 UMT3 SMT3
T106
3000
−
(1)
(2)
T146
3000
−
−
0.1Min.
TL
3000
2.1
(3)
−
−
0.65 0.65
0.15
1.3
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : K26
−
2.9
SMT3
<SC-59>
 Inner circuit
1.1
0.4
0.8
1.6
2.8
(3)
C
R
(2)
(1)
0.95 0.95
E
(1) GND
(2) IN
(3) OUT
E : Emitter
C : Collector
B : Base
1.9
0.15
0.3Min.
B
0.1Min.
Each lead has same dimensions
Abbreviated symbol : K26
UMT3
Taping Taping Taping
DTC144GE
DTC144GUA
DTC144GKA
0.15
1.0
(1) GND
 Packaging specifications
Basic ordering unit (pieces)
1.6
0.2
0.5 0.5
<SC-70>
Part No.
(1)
0.2
(3) OUT
Package
Packaging type
Code
0.55
0.3
(3)
(2) IN
 Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
0.7
1.6
0.8
 Features
1)The built-in bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic effects
are almost completely eliminated.
2)Only the on / off conditions need to be set for operation, making the
device design easy.
3)Higher mounting densities can be achieved.
(SC-75A)
<SOT-416>
Each lead has same dimensions
Abbreviated symbol : K26
R=47kΩ
 Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
Parameter
VCBO
50
Collector-emitter voltage
VCEO
50
V
V
Emitter-base voltage
VEBO
5
Collector current
IC
100
Collector power DTC144GE
dissipation
DTC144GUA / DTC144GKA
Pc
V
mA
150
mW
200
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.09 - Rev.D
DTC144GE / DTC144GUA / DTC144GKA
Data Sheet
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
50
50
5
−
−
−
−
−
−
V
V
V
IC=50μA
IC=1mA
IE=160μA
−
65
−
−
−
−
0.5
130
0.3
μA
μA
V
VCB=50V
VEB=4V
68
32.9
−
47
−
61.1
−
kΩ
IC=5mA , VCE=5V
−
−
250
−
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
Emitter-base resistance
R
Transition frequency
∗ Characteristics of built-in transistor
fT ∗
Conditions
IC=10mA, IB=0.5mA
VCE=10V , IE= −5mA , f=100MHz
1k
VCE=5V
Ta=100°C
500
DC CURRENT GAIN : hFE(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
 Electrical characteristics curves
Ta=25°C
200
100
50
Ta= −40°C
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m
10m 20m
50m 100m
Ta=100°C
Ta=25°C
200m
100m
50m
Ta=− 40°C
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m
10m 20m
50m 100m
Fig.2 Collector-Emitter saturation
vs. Collector current
Fig.1 DC current gain
vs. Collector current
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IC/IB=20/1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
c 2011 ROHM Co., Ltd. All rights reserved.
○
1
500m
2/2
2011.09 - Rev.D
Notice
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R1120A
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