TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and stepping motor drivers. The suffix (G) appended to the part number represents a Lead (Pb)-Free product. TD62064BP1G Features TD62064BFG • Package type • High output sustaining voltage: VCE (SUS) = 80 V (min) • Output current (single output): IOUT = 1.5 A/ch (max) • Output clamp diodes • Input compatible with TTL and 5 V CMOS • GND and SUB terminal = Heat sink BP1G: DIP16 pin BFG: HSOP16 pin Weight DIP16-P-300-2.54A: 1.11 g (typ.) HSOP16-P-300-1.00: 0.50 g (typ.) Pin Assignment (top view) TD62064BP1G Heat sink & GND O4 NC I4 I3 NC O3 16 15 14 13 12 11 10 9 1 COM 2 O1 3 I1 4 5 6 I2 7 O2 8 COM Heat sink & GND TD62064BFG O4 NC I4 NC 16 15 14 13 1 COM 2 O1 3 I1 4 NC Heat sink & GND Heat sink & GND NC I3 NC O3 12 11 10 9 5 NC 6 I2 7 O2 8 COM Note: The NC pins are not connected to the die. If wiring is required, it is recommended to connect the pins to the Heat sink & GND line(s). 1 2006-06-13 TD62064BP1G/BFG Schematics (each driver) TD62064BP1G/BFG COMMON Output 230 Ω 1.1 kΩ 8.2 kΩ Input GND Note: The input and output parasitic diodes cannot be used as clamp diodes. Precautions for Using (1) This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. (2) If a TD62064BP1G/BFG is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba recommends that the diodes (pins 1 and 8) be connected to the secondary power supply pin so as to absorb the counter electromotive force generated by the load. Please adhere to the device’s absolute maximum ratings. Toshiba recommends that zener diodes be connected between the diodes (pins 1 and 8) and the secondary power supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again, please adhere to the device’s absolute maximum ratings. Absolute Maximum Ratings (Ta = 25°C) Characteristics Output sustaining voltage Symbol Rating Unit VCE (SUS) −0.5 to 80 V Parasitic transistor output voltage VCEF (Note 1) 80 V Output current IOUT 1.5 A/ch Input current IIN 50 mA Input voltage VIN 7 V Clamp diode reverse voltage VR 80 V Clamp diode forward current IF 1.5 A BP1G Power dissipation PD BFG 1.47/2.7 (Note 2) 0.9/1.4 (Note 3) W Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 150 °C Note 1: Parasitic transistor (COMMON − GND − OUTPUT) output voltage Note 2: On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 3: On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%) 2 2006-06-13 TD62064BP1G/BFG Recommended Operating Conditions (Ta = −40 to 85°C) Symbol Test Condition Min Typ. Max Unit VCE (SUS) ⎯ 0 ⎯ 80 V 0 ⎯ 1250 Characteristics Output sustaining voltage DC1 circuit, Ta = 25°C BP1G (Note 1) Output current Tpw = 25 ms 4 circuits Ta = 85°C Tj = 120°C IOUT BFG (Note 2) 0 ⎯ 1250 0 ⎯ 380 Duty = 10% 0 ⎯ 900 Duty = 50% 0 ⎯ 170 0 ⎯ 5.5 2.5 ⎯ 8 ⎯ VIN Input voltage Duty = 10% Duty = 50% Output ON VIN (ON) Output OFF IOUT = 1.25 A mA/ch V VIN (OFF) ⎯ 0 ⎯ 0.4 Input current IIN ⎯ 0 ⎯ 20 mA Clamp diode reverse voltage VR ⎯ 0 ⎯ 80 V Clamp diode forward current IF ⎯ ⎯ ⎯ 1.25 A Power dissipation BP1G PD BFG Ta = 85°C (Note 1) ⎯ ⎯ 1.4 Ta = 85°C (Note 2) ⎯ ⎯ 0.7 Min Typ. Max VCE = 80 V, Ta = 25°C ⎯ ⎯ 50 VCE = 80 V, Ta = 85°C ⎯ ⎯ 100 W Note 1: On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%) Electrical Characteristics (Ta = 25°C unless otherwise noted) Symbol Test Circuit ICEX 1 Output saturation voltage VCE (sat) 2 DC current transfer ratio hFE Input voltage (output on) VIN (ON) Characteristics Output leakage current Clamp diode leakage current Test Condition IOUT = 1.25 A, VIN = 2.4 V ⎯ ⎯ 1.6 IOUT = 0.75 A, VIN = 2.4 V ⎯ ⎯ 1.25 2 VCE = 2 V, IOUT = 1.25 A ⎯ 1500 ⎯ 3 IOUT = 1.25 A, IIN = 2 mA ⎯ ⎯ 2.4 VR = 80 V, Ta = 25°C ⎯ ⎯ 50 VR = 80 V, Ta = 85°C ⎯ ⎯ 100 Unit µA V V µA IR 4 Clamp diode forward voltage VF 5 IF = 1.25 A ⎯ 1.5 2.0 V Input capacitance CIN 6 VIN = 0, f = 1 MHz ⎯ 15 ⎯ pF Turn-ON delay tON 7 VOUT = 80 V, RL = 68 Ω ⎯ 0.1 ⎯ µs Turn-OFF delay tOFF 7 VOUT = 80 V, RL = 68 Ω ⎯ 1.0 ⎯ µs Parasitic transistor output voltage VCEF 8 ICEF = 150 mA 80 ⎯ ⎯ V 3 2006-06-13 TD62064BP1G/BFG Test Circuit 1. ICEX 2. VCE (sat), hFE Open 3. VIN (ON) Open Open ICEX IIN IOUT IOUT Open VCE 4. IR VIN (ON) VCE, VCE (sat) 5. VF VCE 6. CIN Open IR Open VF VR fi IF Capacitance bridge LO Open Open Open Open VIN 7. tON, tOFF Input Open VOUT RL Pulse generator (Note 1) Output Input CL = 15 pF (Note 2) VIN (Note 1) tf tr 90% 50% 10% 50 µs tON Output VIH = 2.4 V 90% 50% 10% tOFF 50% 0 VOH 50% VOL Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance 8. Vcef Open Output Icef = 150 mA Open COM1, 2 Vcef Icef = 150 mA (at. single pulse = 5 ms) 4 2006-06-13 TD62064BP1G/BFG IOUT – VCE (sat) IOUT – VCE (sat) 1.6 1.5 TD62064 2 mA TD62064 1 mA (mA) 500 µA 1.2 Output current IOUT Output current IOUT (mA) Ta = 25°C 0.8 IIN = 300 µA 0.4 0 0 0.4 0.8 1.2 Output saturation voltage 1.6 1.0 0.5 0 0 2.0 25°C max typ. 0.5 VCE (sat) (V) 1.0 1.5 Output saturation voltage IIN – VIN 2.0 VCE (sat) (V) IIN – VIN 2.0 TD62064 TD62064 Ta = 25°C 12 IOUT = 100 mA min IIN typ. 8 Input current Input current IIN max (mA) (mA) 1.6 4 500 mA 1.2 1A 0.8 0.4 0 1.0 2.0 3.0 Input voltage 4.0 0 0 5.0 0.4 VIN (V) 1.2 0.8 Input voltage IOUT – IIN PD (W) (mA) 25 −30 Power dissipation Output current IOUT 300 200 100 0 50 100 Input current 150 IIN VIN (V) (1) DIP-16 pin On glass epoxy PCB (50 × 50 × 1.6 mm Cu 50%) (1) VCE = 2 V Ta = 75 °C 2.4 2.0 PD – Ta 3.0 400 1.6 2.4 (µA) (3) PFP-16 pin On glass epoxy PCB (60 × 30 × 1.6 mm Cu 30%) 1.8 (2) 1.2 (4) PFP-16 pin free air (3) (4) 0.6 0 0 200 (2) DIP-16 pin free air 40 80 120 Ambient temperature 5 160 Ta 200 (°C) 2006-06-13 TD62064BP1G/BFG IOUT – Duty cycle IOUT – Duty cycle 1500 1500 n=1 (mA) n=3 n=2 n=4 900 Output current IOUT Output current IOUT (mA) n=1 1200 600 300 TD62064BP1G 1200 n=4 300 TD62064BP1G Ta = 85°C n-ch ON 20 n=2 600 Ta = 25°C 0 0 n=3 900 n-ch ON 40 60 Duty Cycle 0 0 100 80 20 (%) 40 Duty Cycle IOUT – Duty cycle 60 80 100 80 100 (%) IOUT – Duty cycle 1500 1500 (mA) n=4 n=3 n=2 Output current IOUT Output current IOUT (mA) n=1 1200 900 600 300 TD62064BFG 1200 n=1 900 n=4 600 300 Ta = 25°C 20 TD62064BFG Ta = 85°C n-ch ON 0 0 n=2 n=3 n-ch ON 40 Duty cycle 60 80 0 0 100 (%) 20 40 Duty cycle 6 60 (%) 2006-06-13 TD62064BP1G/BFG Package Dimensions Weight: 1.11 g (typ.) 7 2006-06-13 TD62064BP1G/BFG Package Dimensions Weight: 0.50 g (typ.) 8 2006-06-13 TD62064BP1G/BFG Notes on Contents 1. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 2. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on Handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly. 9 2006-06-13 TD62064BP1G/BFG Points to Remember on Handling of ICs (1) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (2) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 10 2006-06-13 TD62064BP1G/BFG About solderability, following conditions were confirmed • Solderability (1) Use of Sn-37Pb solder Bath · solder bath temperature = 230°C · dipping time = 5 seconds · the number of times = once · use of R-type flux (2) Use of Sn-3.0Ag-0.5Cu solder Bath · solder bath temperature = 245°C · dipping time = 5 seconds · the number of times = once · use of R-type flux RESTRICTIONS ON PRODUCT USE 060116EBA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C • The products described in this document are subject to the foreign exchange and foreign trade laws. 021023_E 11 2006-06-13