AP9971AGS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
60V
RDS(ON)
36mΩ
ID
G
22A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
22
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
14
A
80
A
34.7
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
3.6
℃/W
40
℃/W
1
201311112
AP9971AGS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
60
-
-
V
VGS=10V, ID=15A
-
-
36
mΩ
VGS=6V, ID=10A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=15A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=15A
-
17
27
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
6.4
-
nC
VDS=30V
-
6.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=15A
-
22
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
4.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
625
1000
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
IS=15A, VGS=0V
-
-
1.3
V
IS=15A, VGS=0V
-
27
-
ns
dI/dt=100A/µs
-
26
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971AGS-HF
80
50
7 .0 V
40
60
ID , Drain Current (A)
ID , Drain Current (A)
10 V
7 .0 V
T C = 150 o C
10 V
T C = 25 o C
40
5.0 V
4.5 V
5.0 V
30
4.5 V
20
V G = 4.0 V
20
10
V G = 4 .0V
0
0
0
2
4
6
0
8
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
2.0
I D =10A
I D =15A
V G =10V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
40
30
1.2
0.8
20
0.4
2
4
6
8
10
-50
1.5
16
1.3
Normalized VGS(th)
IS(A)
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
T j =150 o C
50
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
12
0
o
V GS Gate-to-Source Voltage (V)
T j =25 o C
8
1.1
0.9
0.7
4
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971AGS-HF
f=1.0MHz
1000
12
C iss
V DS = 30 V
V DS = 36 V
V DS = 48 V
8
C (pF)
VGS , Gate to Source Voltage (V)
I D = 15 A
10
6
100
C oss
C rss
4
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
100us
ID (A)
10
1ms
1
10ms
100ms
DC
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4