2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3388 Switching Regulator, DC-DC Converter Applications Motor Drive Applications · Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) · High forward transfer admittance: |Yfs| = 20 S (typ.) · Low leakage current: IDSS = 100 µA (VDS = 250 V) · Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kW) VDGR 250 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 20 Pulse (Note 1) IDP 60 Drain power dissipation (Tc = 25°C) PD 125 W JEITA SC-97 Single pulse avalanche energy (Note 2) EAS 487 mJ TOSHIBA 2-9F1B Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current A JEDEC Thermal resistance, channel to case Weight: 0.74 g (typ.) Circuit Configuration Notice: Thermal Characteristics Characteristics ― Symbol Max Unit Rth (ch-c) 1.00 °C/W Please use the S1 pin for gate input signal return. Make sure that the main current flows into S2 pin. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 2.06 mH, IAR = 20 A, RG = 25 W 4 1 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 2002-02-06 2SK3388 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Gate leakage current Test Condition VGS = ±16 V, VDS = 0 V IGSS Drain cut-off current VDS = 250 V, VGS = 0 V Typ. Max Unit ¾ ¾ ±10 mA ¾ ¾ 100 mA V (BR) DSS ID = 10 mA, VGS = 0 V 250 ¾ ¾ V IDSS Drain-source breakdown voltage Min Vth VDS = 10 V, ID = 1 mA 1.5 ¾ 3.5 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 10 A ¾ 82 105 mW Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 10 20 ¾ S Input capacitance Ciss ¾ 4000 ¾ Reverse transfer capacitance Crss ¾ 300 ¾ Output capacitance Coss ¾ 1000 ¾ ¾ 7 ¾ ¾ 20 ¾ ¾ 25 ¾ ¾ 145 ¾ ¾ 100 ¾ ¾ 70 ¾ ¾ 30 ¾ Rise time tr VGS ton Switching time Fall time tf Turn-off time Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT VDD ~ - 125 V toff Total gate charge (gate-source plus gate-drain) ID = 10 A 10 V 0V 4.7 W Turn-on time VDS = 10 V, VGS = 0 V, f = 1 MHz RL = 12.5W Gate threshold voltage Duty < = 1%, tw = 10 ms VDD ~ - 200 V, VGS = 10 V, ID = 20 A pF ns nC Note 4: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don’t connect and ground it.) Source-Drain Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ¾ ¾ ¾ 20 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ¾ ¾ ¾ 60 A Continuous drain reverse current (Note 1, Note 5) IDR2 ¾ ¾ ¾ 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 ¾ ¾ ¾ 4 A Forward voltage (diode) VDS2F Reverse recovery time trr Reverse recovery charge Qrr IDR1 = 20 A, VGS = 0 V ¾ ¾ -2.0 V IDR = 20 A, VGS = 0 V, dIDR/dt = 100 A/ms ¾ 300 ¾ ns ¾ 3.3 ¾ mC Note 5: drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking ※ Lot Number K3388 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-02-06 2SK3388 ID – VDS 20 ID – VDS 100 10 4.5 6 16 80 4 8 3.8 4 0 0 2 3 Drain-source voltage 4 VDS 10 Pulse test 6 60 5 40 4.5 VGS = 4 V 0 0 5 (V) 4 8 12 Drain-source voltage ID – VGS 16 VDS Common source Tc = 25°C (V) VDS = 10 V Pulse test VDS (A) 30 20 Drain-source voltage ID (V) 4 Common source Drain current 20 VDS – VGS 50 40 5.5 20 VGS = 3.5 V 1 Tc = 25°C (A) ID Drain current Drain current ID (A) Common source Tc = 25°C Pulse test 12 8 Common source 4.2 Tc = -55°C 100 10 25 Pulse test 3 2 ID = 20 A 1 10 5 0 0 2 4 6 Gate-source voltage 8 VGS 0 0 10 (V) 5 10 Gate-source voltage ïYfsï – ID Common source Tc = -55°C Tc = 25°C 25 Pulse test Drain-source on resistance RDS (ON) (mW) (S) VDS = 10 V Pulse test ïYfsï (V) 1000 Common source Forward transfer admittance VGS 20 RDS (ON) – ID 100 100 10 1 1 15 10 Drain current 10 1 100 ID 100 (A) VGS = 10, 15 V 10 Drain current 3 100 ID (A) 2002-02-06 2SK3388 IDR – VDS 100 Common source 5 ID = 20 A 120 80 40 0 -80 -40 0 40 80 Case temperature Tc Common source Tc = 25°C VGS = 10 V Pulse test (A) 160 10 Drain reverse current IDR Drain-source on resistance RDS (ON) (mW) RDS (ON) – Tc 200 120 Pulse test 10 VGS = 10 V 5 1 1 0 0.1 0 160 3 -0.2 (°C) -0.4 -0.6 -1.2 VDS -1.4 -1.6 (V) Vth – Tc Capacitance – VDS 4 Common source Gate threshold voltage Vth (V) Ciss (pF) -1 Drain-source voltage 10000 Capacitance C -0.8 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHz ID = 1 mA Pulse test 2 1 0 -80 Tc = 25°C 10 0.1 VDS = 10 V 3 1 10 Drain-source voltage -40 0 80 Case temperature Tc 100 VDS 40 120 160 (°C) (V) PD – Tc Dynamic input/output characteristics 200 500 20 80 40 10 0 40 80 120 Case temperature Tc 160 VDD = 50 V (°C) 12 300 VGS 200 100 200 VDS 8 100 0 0 200 4 40 80 (V) 16 VGS VDS Drain-source voltage Drain power dissipation 120 400 Tc = 25°C Pulse test 120 160 Gate-source voltage (V) ID = 20 A 160 PD (W) Common source 0 200 Total gate charge Qg (nC) 4 2002-02-06 2SK3388 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 (s) EAS – Tch Safe operating area 100 500 ID max (pulsed) * (mJ) 100 ms* Avalanche energy EAS ID max 10 (continuous) Drain current ID (A) 1 ms* DC operation Tc = 25°C 1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 10 Drain-source voltage 100 300 200 100 0 25 VDSS max VDS 400 50 75 100 125 150 Channel temperature (initial) Tch (°C) 1000 (V) 15 V BVDSS IAR -15 V VDD Test circuit RG = 25 W VDD = 50 V, L = 2.06 mH 5 VDS Waveform Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 è VDSS VDD ø 2002-02-06 2SK3388 SAFETY RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-02-06