2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 1 A Collector power dissipation PC 1.3 W Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range JEDEC ― JEITA ― TOSHIBA Weight: 0.55 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics 2-8M1A Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ― ― 1 µA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 1 µA V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V VCE = 1 V, IC = 1 A 70 ― 240 Collector-emitter breakdown voltage hFE (1) DC current gain (Note) hFE (2) VCE = 1 V, IC = 3 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = 3 A, IB = 0.15 A ― 0.2 0.4 V Base-emitter saturation voltage VBE (sat) IC = 3 A, IB = 0.15 A ― 0.9 1.2 V VCE = 4 V, IC = 1 A ― 120 ― MHz VCB = 10 V, IE = 0, f = 1 MHz ― 80 ― pF ― 0.1 ― ― 1.0 ― ― 0.1 ― Collector output capacitance ton 20 µs Input IB1 Turn-on time fT Cob Storage time tstg IB2 Switching time IB1 IB2 Output 10 Ω Transition frequency µs VCC = 30 V Fall time tf IB1 = −IB2 = 0.15 A, duty cycle ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 1 2004-07-07 2SC5076 Marking C5076 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC5076 IC – VCE 100 8 90 VCE Tc = 25°C 80 70 60 50 6 Collector-emitter voltage IC (A) (V) Common emitter 10 Collector current VCE – IC 40 4 30 20 2 0 0 IB = 10 mA 2 4 6 8 10 Collector-emitter voltage VCE 0.8 Tc = 25°C IB = 10 mA 20 200 300 500 0.2 1 2 (V) VCE 120 Collector-emitter voltage (V) VCE Collector-emitter voltage 80 100 IB = 10 mA 0.6 150 0.4 200 300 0.2 0 0 1 2 3 4 5 6 0.8 7 6 Tc = −55°C IB = 20 mA 80 120 160 200 0.6 250 300 0.4 500 0.2 1 2 3 4 5 6 7 Collector current IC (A) hFE – IC VCE (sat) – IC 2 Collector-emitter saturation voltage VCE (sat) (V) Common emitter 500 hFE 5 Common emitter 40 0 0 7 1000 DC current gain 4 1.0 Collector current IC (A) VCE = 1 V 300 Tc = 100°C 25 100 −55 50 30 10 0.03 3 VCE – IC 0.8 60 100 Collector current IC (A) Tc = 100°C 40 80 0.4 (V) Common emitter 20 60 150 VCE – IC 1.0 40 0.6 0 0 14 12 Common emitter 1.0 0.1 0.3 1 3 Common emitter 1 0.5 0.3 Tc = −55°C 25 0.1 100 0.05 0.03 0.03 10 Collector current IC (A) IC/IB = 20 0.1 0.3 1 3 10 Collector current IC (A) 3 2004-07-07 2SC5076 VBE (sat) – IC IC – VBE 5 10 Common emitter IC/IB = 20 VCE = 1 V IC (A) 3 Tc = −55°C 1 0.5 100 Collector current Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 25 0.3 0.1 0.03 0.1 0.3 1 3 4 3 25 Tc = 100°C 2 −55 1 10 0 0 Collector current IC (A) 0.4 0.8 1.2 Base-emitter voltage 1.6 VBE 2.0 2.4 (V) Safe Operating Area 10 5 IC max (pulsed)* 3 Collector current IC (A) 1 1 ms* 10 ms* IC max (continuous) 0.5 0.3 0.1 DC operation (Ta = 25°C) 0.05 0.03 0.01 0.005 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.001 0.1 0.3 0.5 1 3 0.003 VCEO max 5 Collector-emitter voltage 10 VCE 30 50 100 (V) 4 2004-07-07 2SC5076 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07