Fairchild BPW36 Hermetic silicon phototransistor Datasheet

BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
FEATURES
• Hermetically sealed package
• Narrow reception angle
• European “Pro Electron” registered
0.209 (5.31)
0.184 (4.67)
DESCRIPTION
0.030 (0.76)
NOM
0.255 (6.48)
• The BPW36/37 are silicon phototransistors
mounted in narrow angle TO-18 packages.
0.50 (12.7)
MIN
SCHEMATIC
C
0.020 (0.51) 3X
Base
B
0.100 (2.54)
0.050 (1.27)
Emitter
Collector
(Case)
E
0.040 (1.02)
Ø0.100 (2.54)
0.040 (1.02)
45°
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of
940 nm.
(TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(3,4,5 and 6)
Soldering Temperature (Flow)(3,4 and 6)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation (TA = 25°C)(1)
Power Dissipation (TC = 25°C)(2)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
VCEO
VCBO
VEBO
PD
PD
 2001 Fairchild Semiconductor Corporation
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3/13/01
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Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
45
45
5
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
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BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
IC = 10 mA, Ee = 0
BVCEO
45
—
—
V
Emitter-Base Breakdown
IE = 100 µA, Ee = 0
BVEBO
5.0
—
—
V
Collector-Base Breakdown
IC = 100 µA, Ee = 0
BVCBO
45
—
—
V
Collector-Emitter Leakage
VCE = 10 V, Ee = 0
ICEO
—
—
100
nA
0
—
±10
—
Deg.
IC(ON)
1.0
—
—
mA
IC(ON)
0.5
—
—
mA
ton
—
8
—
µs
toff
—
7
—
µs
VCE(SAT)
—
—
0.40
V
Reception Angle at 1/2 Sensitivity
Ee = 0.5 mW/cm2
On-State Collector Current BPW36
VCE = 5 V(7)
Ee = 0.5 mW/cm2
On-State Collector Current BPW37
VCE = 5 V(7)
IC = 2 mA, VCC = 10 V
Turn-On Time
RL = 100 1
IC = 2 mA, VCC = 10 V
Turn-Off Time
RL = 100 1
IC = 1.0 mA, Ee = 3.0 mW/cm2
Saturation Voltage
TYPICAL PERFORMANCE CURVES
10
IL - NORMALIZED LIGHT CURRENT
IL - NORMALIZED LIGHT CURRENT
10
Ee = 20 mW/cm2
10 mW/cm2
1.0
5 mW/cm2
2 mW/cm2
0.1
1 mW/cm2
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
.01
1.0
0.1
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
.01
.01
0.1
1.0
10
100
0.1
1.0
10
100
VCE - COLLECTOR TO EMITTER VOLTAGE
H - TOTAL IRRADIANCE IN mW/cm2
Fig. 1 Light Current vs. Collector to Emitter Voltage
Fig. 2 Normalized Light Current vs. Radiation
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BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
TYPICAL PERFORMANCE CURVES
10
SWITCHING TIME (µs)
IL - NORMALIZED LIGHT CURRENT
10
1.0
RL = 1 k1
1.0
Normalized to:
VCE = 10 V
IL = 2 mA
tON = tOFF = 5 µs
RL = 100 1
Normalized to:
VCE = 5 V
Ee = 10 mW/cm2
TA = 25˚C
0.1
0
50
100
150
0.1
1.0
TA - TEMPERATURE (˚C)
10
100
IL - OUTPUT CURRENT (mA)
Fig. 3 Normalized Light Current vs. Temperature
Fig. 4 Switching Times vs. Output Current
106
1.4
IL - NORMALIZED LIGHT CURRENT
IL - NORMALIZED DARK CURRENT
RL = 10 1
0.1
-50
105
104
103
102
10.0
Normalized to:
ID @ 25˚C
VCEO = 10 V
1.0
0.1
1.2
CQX14
BPW36 OR
BPW37
1.0
0.8
0.6
0.4
Normalized to:
CQX14 Input = 10 mA
VCEO = 10 V
IL = 100 µA
TA = 25˚C
0.2
0
0
25
50
75
100
125
55
150
TA - TEMPERATURE (˚C)
3/13/01
35
15
5
25
45
65
85
105
TA - TEMPERATURE (˚C)
Fig. 5 Dark Current vs. Temperature
DS300279
RL = 100 1
Fig. 6 Normalized Light Current vs. Temperature
Both Emitter (CQX14) and Detector
(BPW36 or BPW37) at Same Temperature
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BPW36/BPW37
HERMETIC SILICON PHOTOTRANSISTOR
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
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2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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