UMS CHA3093C99F/00 20-40ghz medium power amplifier Datasheet

CHA3093c
20-40GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is
designed for a wide range of applications, from
military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps simplify the
assembly process.
A B.I.T. ( Build In Test ) monitors a DC voltage
that is representative of the microwave output
power.
IN
OUT
Vg1 Vg2
The circuit is manufactured with a PM-HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
■ Broadband performances : 20-40GHz
■ 20dBm output power.
■ 22dB gain
■ Very good broadband input matching
■ On chip output power level DC detector
■ Low DC power consumption, 330mA @ 3.5V
■ Chip size : 0.83 X 1.72 X 0.10 mm
Vg 3
Vdet
Vg4
Typical on wafer measurements :
30
20
10
Gain & RLoss (dB)
Main Features
Vd2,3,4
Vd1
0
S22
-10
S11
-20
-30
-40
15
20
25
30
35
40
45
FREQ (GHz)
Input Rloss : solid line & output Rloss : dash line.
Main Characteristics
Tamb. = 25°C
Parameter
Fop
G
P03
Id
Min
Typ
Max
Unit
40
GHz
Operating frequency range
20
Small signal gain
18
20
dB
Output power at 3dB gain compression
20
22
dBm
Bias current
330
400
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA30932158 -07-June-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
50
20-40GHz Medium Power Amplifier
CHA3093c
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3,4 = 3.5V Id=330mA
Symbol
Fop
Parameter
Min
Operating frequency range (1)
20
G
Small signal gain [ 20GHz to 35GHz](1)
20
G
Small signal gain (1)
18
∆G
Small signal gain flatness (1) (Any 1GHz BW)
Is
Reverse isolation (1)
Typ
Max
Unit
40
GHz
22
dB
dB
±0.5
dB
50
dB
P1dB
Pulsed output power at 1dB gain compression (1)
18
20
dBm
P3dB
Pulsed output power at 3dB gain compression (1)
20
22
dBm
rd
IP3
3 order intercept point
29
dBm
PAE
Power added efficiency at saturation
10
%
VSWRin
VSWRout
NF
Vdet
Id
Input VSWR (1)
1.2:1
2.0:1
Output VSWR (1)
2.0:1
3.0:1
Noise figure
8.0
10.0
Detected voltage : at 25GHz @ Pout=20dBm (2)
Detected voltage : at 38GHz @ Pout=20dBm (2)
0.65
0.45
Bias current (small signal)
330
dB
V
V
400
mA
(1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports.
(2) In the case of a jig or a module CW mode operation, the typical output power may be around 2dB less.
(2) Voltage across an external 10kOhm parallel resistor connected to the voltage detector pad.
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
Vds
Drain bias voltage_small signal (2)
4.0
V
Ids
Drain bias current_small signal
470
mA
Vgs
Gate bias voltage
-2 to +0.4
V
Vdg
Drain Gate voltage (Vds – Vgs)
+5
V
Pin
Maximum continuous input power (2)
+4 (@ 20GHz)
-1 (@ 40GHz)
+15
dBm
dBm
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +125
°C
Maximum peak input power overdrive (3)
Ta
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA30932158 -07-June-02
2/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
CHA3093c
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
S11
Freq
GHz
2,00
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
20,00
21,00
22,00
23,00
24,00
25,00
26,00
27,00
28,00
29,00
30,00
31,00
32,00
33,00
34,00
35,00
36,00
37,00
38,00
39,00
40,00
41,00
42,00
43,00
44,00
45,00
46,00
48,00
50,00
52,00
54,00
56,00
58,00
60,00
Vd1,2,3,4 = 3.5 Volt, Vg1=Vg2,3,4 for Id total = 330 mA.
mod
dB
-9,77
-9,97
-10,97
-12,23
-13,30
-14,19
-15,25
-16,90
-18,45
-18,27
-20,55
-20,72
-29,56
-23,58
-21,33
-21,32
-22,06
-22,21
-19,66
-17,80
-17,46
-15,16
-15,09
-14,57
-13,80
-13,55
-12,80
-12,55
-12,64
-12,53
-11,23
-10,73
-10,79
-10,93
-10,92
-11,37
-8,41
-5,96
-3,89
-2,88
-2,21
-2,02
-1,87
S12
pha
/°
166,10
159,94
144,60
141,58
132,93
127,48
119,12
109,51
101,39
99,66
75,06
49,52
58,15
58,28
29,56
-8,76
-29,59
-31,27
-44,67
-56,40
-61,68
-70,64
-83,96
-89,19
-92,45
-97,98
-102,27
-108,34
-110,41
-108,87
-110,01
-118,61
-124,01
-121,39
-125,62
-121,74
-103,89
-119,91
-131,50
-146,98
-160,52
-173,49
175,37
Ref. : DSCHA30932158 -07-June-02
mod
dB
-79,63
-78,88
-63,16
-67,81
-76,00
-69,79
-68,09
-56,64
-77,66
-54,79
-69,47
-57,54
-54,03
-56,11
-54,05
-62,57
-63,41
-56,43
-59,88
-58,46
-56,48
-52,06
-56,43
-59,91
-54,72
-54,97
-54,75
-54,06
-53,05
-50,99
-52,73
-56,04
-56,86
-52,92
-52,23
-60,67
-53,21
-58,10
-52,69
-60,21
-52,63
-55,84
-49,76
S21
pha
/°
85,41
19,46
-150,36
-92,96
168,10
162,87
-141,61
151,79
-40,17
30,38
-61,55
-51,49
-168,51
107,75
67,67
-37,46
-139,56
165,63
138,12
132,33
154,53
105,41
63,48
89,24
94,43
59,43
93,32
58,24
50,25
30,11
3,78
22,66
-6,86
-31,58
-85,31
-166,71
-121,20
116,39
160,04
15,97
159,63
-175,77
95,59
3/10
mod
dB
-44,50
-45,28
-32,41
-30,97
-39,55
-12,99
4,59
14,64
20,56
23,06
23,87
24,20
23,40
22,98
22,93
23,05
22,56
21,93
22,19
21,80
21,36
21,50
20,88
20,82
20,70
20,47
20,11
19,72
19,84
19,49
19,40
18,88
18,38
18,36
18,33
17,03
13,67
6,60
-0,07
-7,50
-16,29
-29,86
-23,82
S22
pha
/°
11,25
64,07
-15,70
-73,10
-81,72
-8,19
-92,82
166,69
66,78
-25,87
-67,24
-106,39
-146,58
-173,95
156,61
125,30
96,27
70,69
43,16
16,81
-6,65
-31,90
-56,82
-81,12
-104,79
-129,10
-154,27
-177,11
159,83
133,90
108,31
81,37
56,83
32,20
-0,36
-37,26
-104,46
-158,83
156,43
118,68
95,16
112,18
170,18
mod
dB
-0,06
-0,17
-0,26
-0,19
-0,32
-0,95
-3,13
-6,28
-12,44
-11,02
-8,60
-7,90
-10,21
-10,20
-10,87
-11,82
-13,75
-13,72
-13,95
-15,15
-15,78
-15,57
-20,24
-19,36
-18,36
-20,65
-17,69
-18,18
-15,31
-13,49
-11,73
-11,60
-10,29
-8,52
-7,30
-7,39
-4,69
-3,75
-3,23
-2,74
-2,57
-2,56
-2,53
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
pha
/°
-16,47
-32,94
-48,70
-66,41
-86,37
-109,99
-134,29
-148,92
-152,39
-127,42
-138,79
-148,31
-167,46
-161,72
-166,58
179,69
179,91
-176,79
168,88
167,61
157,73
137,58
133,08
132,46
101,23
80,50
61,37
37,45
24,91
5,75
-9,23
-21,67
-23,61
-33,55
-45,47
-51,37
-68,35
-85,06
-99,24
-112,94
-124,78
-135,15
-145,16
20-40GHz Medium Power Amplifier
CHA3093c
Typical On wafer Power CW Measurements
Bias Conditions :
Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA
Ref. : DSCHA30932158 -07-June-02
4/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
Ref. : DSCHA30932158 -07-June-02
5/10
CHA3093c
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
CHA3093c
Typical IN TEST JIG Power Measurements in temperature
Note : Jig losses included (1 dB)
Bias Conditions :
Vd1,2,3,4 = 3.5 Volt, Vg1,2,3,4 for Id = 330 mA
Ref. : DSCHA30932158 -07-June-02
6/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
Ref. : DSCHA30932158 -07-June-02
7/10
CHA3093c
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
CHA3093c
Typical Bias Tuning
The circuit schematic is given below :
Vd1
Vd 2,3,4
IN
OUT
Vg1
Vg 2
Vg 3,4
Vdet
For medium power operation, the four drain biases are connected altogether. In a same way, all the
gate biases are connected together at the same power supply, tuned to drive a small signal
operating current of 300mA. A separate access to the gate voltages of the two first stages ( Vg1,2 )
is provided in order to be able to tune the first stages for the application, as a lower noise amplifier or
a multiplier.
An additional pad is provided for monitoring the output power, using the Build In Test. This access,
when connected to an external resistor of 10 kOhm ( typical value ) provides a DC voltage which
follows the output power level.
On wafer power measurements versus output power
Ref. : DSCHA30932158 -07-June-02
8/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
20-40GHz Medium Power Amplifier
CHA3093c
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended
Bonding pad positions.
( Chip thickness : 100µm.all dimensions are in micrometers)
Number
Size (x,y) µm
Center position (x,y) µm
(Refered to bottom left origin)
773 / 689
1
34 / 98
2
48 / 68
68 /34
3
98 / 34
800 / 43
4
34 / 98
1237/ 73
Pickup Pillow
Ref. : DSCHA30932158 -07-June-02
9/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA3093c
Ordering Information
Chip form
:
CHA3093c99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no
responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United
Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This
publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products
are not authorised for use as critical components in life support devices or systems without express written approval from
United Monolithic Semiconductors S.A.S
Ref. : DSCHA30932158 -07-June-02
10/10
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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