HDSEMI BC858 Sot-23 plastic-encapsulate transistor Datasheet

BC856-8
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP
Features
● Ideally suited for automatic insertion
● For Switching and AF Amplifier Applications
)
SOT- 23
Marking:
● BC856A=3A;BC856B=3B;
● BC857A=3E;BC857B=3F;BC857C=3G;
● BC858A=3J;BC858B=3K;BC858C=3L;
C
B
Item
Collector-Base Voltage
Collector-Emitter Voltage
BC856
BC857
BC858
BC856
BC857
BC858
Emitter-Base Voltage
Symbol
Unit
VCBO
V
Conditions
E
Value
-80
-50
-30
VCEO
V
-65
-45
-30
VEBO
V
-5
Collector Current
IC
A
-0.1
Total Device Dissipation
PC
W
0.2
RΘJA
℃/W
625
Junction Temperature
Tj
℃
150
Storage Temperature
TSTG
℃
-55 to +150
Thermal Resistance From Junction To Ambient
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
Parameter
Collector-base breakdown voltage
T est conditions
BC856
BC857
IC= -10μA, IE=0
IC= -10mA, IB=0
BC856
BC857
ICBO
VCB= -45 V , IE=0
VCE= -40 V , IB=0
VEB= -5 V , IC=0
BC856A, 857A,858A
BC856B, 857B,858B
V
-0.1
μA
-0.1
μA
-0.1
μA
VCE= -25 V , IB=0
IEBO
DC current gain
-5
VCE= -60 V , IB=0
ICEO
BC858
Emitter cut-off current
IE= -1μA, IC=0
VCB= -25 V , IE=0
BC856
BC857
V
VCB= -70 V , IE=0
BC858
Collector cut-off current
-45
-30
VEBO
Collector cut-off current
V
-50
-65
VCEO
BC858
Emitter-base breakdown voltage
Unit
-30
BC856
BC857
Max
-80
VCBO
BC858
Collector-emitter breakdown voltage
Min
hFE
VCE= -5V,IC= -2mA
BC857C,BC858C
125
250
220
475
420
800
Collector-emitter saturation voltage
VCE(sat)
IC=-100mA,IB= -5 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= -100mA, IB= -5mA
-1.1
V
Transition frequency
fT
Collector capacitance
Cob
VCE= -5 V, IC= -10mA
f=100MHz
VCB=-10V, f=1MHz
High Diode Semiconductor
100
MHz
4.5
pF
2
Typical Characteristics
Static Characteristic
-8
COMMON
EMITTER
Ta=25℃
IC
-24uA
DC CURRENT GAIN
-21uA
-18uA
-4
-15uA
-12uA
-9uA
-2
—— IC
Ta=100℃
-27uA
-6
hFE
(mA)
-30uA
COLLECTOR CURRENT
hFE
1000
Ta=25℃
100
-6uA
COMMON EMITTER
VCE= -5V
IB=-3uA
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
-1
——
VCE
10
-0.1
-8
-1
(V)
-10
COLLECTOR CURRENT
IC
VBEsat
——
-2
IC
-100
(mA)
IC
-1
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
Ta=25℃
-0.1
Ta=100℃
Ta=25℃
Ta=100℃
β=20
β=20
-0.01
-0.1
-1
-10
COLLECTOR CURRENT
IC
-100
(mA)
-10
COLLECTOR CURRENT
—— VBE
fT
IC
-100
(mA)
IC
——
(MHz)
Ta=100℃
TRANSITION FREQUENCY
fT
-10
Ta=25℃
-1
COMMON EMITTER
VCE=-5V
-0.1
-0.0
-1
500
(mA)
IC
COLLECTOR CURRENT
IC
-0.1
-0.1
-100
-0.3
-0.6
-0.9
100
COMMON EMITTER
VCE=-5V
Ta=25℃
10
-0.1
-1.2
-1
BASE-EMMITER VOLTAGE VBE (V)
Cob/ Cib
-10
COLLECTOR CURRENT
—— VCB/ VEB
PC
250
30
——
IC
-100
(mA)
Ta
f=1MHz
IE=0/IC=0
COLLECTOR POWER DISSIPATION
PC (mW)
10
C
(pF)
Ta=25 ℃
Cib
CAPACITANCE
Cob
1
-0.1
-1
REVERSE VOLTAGE
-10
VR
(V)
-20
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
High Diode Semiconductor
100
Ta
125
150
(℃ )
3
SOT-23
Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
4
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
High Diode Semiconductor
5
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