Excelics EIC7785-5NH-01 7.70-8.50ghz 5-watt internally-matched power fet Datasheet

EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
UPDATED 08/21/2007
FEATURES
•
•
•
•
•
•
•
7.70–8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
8.5 dB Power Gain at 1dB Compression
34% Power Added Efficiency
-49 dBc IM3 at PO = 26.5 dBm SCL
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1600mA
f = 7.70-8.50GHz
MIN
TYP
MAX
36.5
37.5
dBm
7.5
8.5
dB
±0.6
dB
34
f = 7.70-8.50GHz
%
Id1dB
Drain Current at 1dB Compression
IM3
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 8.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
2900
3500
VP
Pinch-off Voltage
1600
VDS = 3 V, IDS = 30 mA
-2.5
-4.0
Opt-01
-42
-45
Opt-02
-46
-49
3
Thermal Resistance
RTH
UNITS
5.0
1900
mA
dBc
5.5
mA
V
o
C/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE1
CONTINUOUS2
15V
10V
-5V
-4V
68mA
20.4mA
-13.6mA
-3.4mA
37dBm
@ 3dB Compression
175C
175C
-65C to +175C
-65C to +175C
27W
27W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
UPDATED 08/21/2007
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ ≈ 1600mA
S11 and S22
1.0
0. 8
6
2.
0
0.
S21 and S12
10
Swp Max
8.7GHz
0
4
4.
0
0
S21 and S12 (dB)
0.
3.
5.0
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
-10.0
2
- 0.
-1.0
-0 .8
.0
-30
7.5
-2
.6
-0
--- S11 ---
.0
FREQ
S[2,2]
EIC7785-5
-20
-3
S[1,1]
EIC7785-5
.4
DB(|S[1,2]|)
EIC7785-5
-10
-4
.0
- 5.
0
-0
DB(|S[2,1]|)
EIC7785-5
7.8
8.1
Frequency (GHz)
Swp Min
7.5GHz
--- S21 ---
--- S12 ---
8.4
8.7
--- S22 ---
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
7.5
0.6072
151.65
2.4887
-96.64
0.0877
-140.79
0.3974
63.69
7.6
0.5668
139.93
2.5636
-108.26
0.0935
-152.21
0.399
51.15
7.7
0.5301
127.41
2.6446
-120.35
0.0984
-164.2
0.3981
38.7
7.8
0.4896
113.26
2.7096
-132.52
0.1039
-176.06
0.392
26.7
7.9
0.4497
98.49
2.7726
-145.04
0.1085
171.35
0.378
14.39
8
0.4085
82.47
2.8207
-157.79
0.1123
158.96
0.3592
1.76
8.1
0.3689
64.87
2.8563
-170.82
0.1168
146.5
0.3329
-11.65
8.2
0.331
45.51
2.8892
175.98
0.1211
133.84
0.3001
-26.37
8.3
0.2961
23.89
2.888
162.68
0.1237
121.11
0.2676
-43.46
8.4
0.2689
-0.24
2.8767
149.22
0.1251
107.74
0.2323
-63
8.5
0.2517
-26.44
2.8389
135.66
0.1254
94.86
0.2034
-87.46
8.6
0.2485
-54.31
2.7741
122.25
0.1254
81.38
0.1942
-116.35
8.7
0.2603
-81
2.7202
108.74
0.1226
67.75
0.2049
-145.47
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised October 2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
UPDATED 08/21/2007
Power De-rating Curve and IM3 Definition
Power Dissipation vs. Temperature
THIRD-ORDER
INTERCEPT POINT IP3
30
IP3 = Pout + IM3/2
Potentially Unsafe
Operating Region
20
15
Safe Operating
Region
10
f1 or f2
Pout [S.C.L.] (dBm)
Total Power Dissipation (W)
25
Pout
IM3
Pin
IM3
f1 f2
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
5
0
25
50
75
100
125
Case Temperature (°C)
150
175
Pin [S.C.L.] (dBm)
Typical Power Data (VDS = 10 V, IDSQ = 1600 mA)
P-1dB & G-1dB vs Frequency
38
10
37
9
36
8
35
7
P-1dB (dBm)
G-1dB (dB)
34
6
7.6
7.8
8.0
8.2
Frequency (GHz)
8.4
IM3 vs Output Power
11
8.6
f1 = 8.50 GHz, f2 = 8.51 GHz
-15
-20
-25
G-1dB (dB)
P-1dB (dBm)
39
Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS)
IM3 (dBc)
0
-30
-35
-40
-45
-50
-55
IM3 (dBc)
-60
21
22
23
24
25
26
27
28
29
30
31
32
33
Pout [S.C.L.] (dBm)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 4
Revised October 2007
EIC7785-5
7.70-8.50GHz 5-Watt Internally-Matched Power FET
UPDATED 08/21/2007
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC7785-5 (Hermetic)
Excelics
EIC7785-5NH (Non-Hermetic)
Excelics
.024
EIC7785-5
.827±.010 .669
EIC7785-5NH
.421
.120 MIN
.120 MIN
YYWW
YYWW
SN
SN
.004
.125
.063
.508±.008
.442
.004
.168±.010
.105±.008
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
Grade1
fTest (GHz)
P1dB (min)
IM3 (min)2
EIC7785-5-01
Hermetic
Industrial
7.70-8.50GHz
36.5
-42
EIC7785-5NH-01
Non-Hermetic
Industrial
7.70-8.50GHz
36.5
-42
EIC7785-5-02
Hermetic
Industrial
7.70-8.50GHz
36.5
-46
EIC7785-5NH-02
Non-Hermetic
Industrial
7.70-8.50GHz
36.5
-46
Notes:
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4
Revised October 2007
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