APT5010JFLL
500V 41A 0.100Ω
POWER MOS 7
R
FREDFET
S
S
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SO
"UL Recognized"
ISOTOP ®
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
27
2
T-
D
G
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5010JFLL
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
41
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
378
Watts
Linear Derating Factor
3.03
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
164
-55 to 150
°C
300
Amps
41
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
35
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 20.5A)
TYP
MAX
UNIT
Volts
0.100
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
9-2004
Characteristic / Test Conditions
050-7029 Rev E
Symbol
APT5010JFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
tf
ID = 41A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
485
VDD = 333V, VGS = 15V
455
ID = 41A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
3
RG = 0.6Ω
Eon
UNIT
pF
60
95
24
50
11
13
25
ID = 41A @ 25°C
Turn-off Delay Time
MAX
4360
895
VDD = 300V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
755
VDD = 333V VGS = 15V
ID = 41A, RG = 5Ω
530
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
164
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -41A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
41
5
t rr
Reverse Recovery Time
(IS = -41A, di/dt = 100A/µs)
Tj = 25°C
280
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -41A, di/dt = 100A/µs)
Tj = 25°C
2.28
Tj = 125°C
6.41
IRRM
Peak Recovery Current
(IS = -41A, di/dt = 100A/µs)
Tj = 25°C
15.7
Tj = 125°C
23.6
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.33
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.20
0.5
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7029 Rev E
9-2004
0.35
0.25
0.3
0.10
0.05
0
t2
0.1
10-5
t1
Duty Factor D = t1/t2
SINGLE PULSE
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 1.65mH, RG = 25Ω, Peak IL = 41A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID41A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.30
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5010JFLL
RC MODEL
Junction
temp. (°C)
0.0988
0.0196F
Power
(watts)
0.230
0.381F
ID, DRAIN CURRENT (AMPERES)
120
15 &10V
8V
100
7.5V
80
7V
60
6.5V
40
6V
20
5.5V
Case temperature. (°C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
70
60
50
40
TJ = +125°C
20
0
TJ = -55°C
TJ = +25°C
10
0
1
2
3
4
5
6
7
8
9
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
I
D
= 20.5A
GS
1.5
1.0
0.5
-25
15
20
25
30
NORMALIZED TO
= 10V @ I = 20.5A
GS
D
1.15
1.10
VGS=10V
1.05
VGS=20V
1.00
0.95
0.90
0
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
= 10V
2.0
0.0
-50
10
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
V
V
1.15
45
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
9-2004
30
0
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7029 Rev E
ID, DRAIN CURRENT (AMPERES)
90
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
176
1mS
16
10
100
D
= 41A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
20
40
60
Crss
80
100
120
140
G
J
L = 100µH
30
TJ =+25°C
1
0.3
td(on)
DD
R
G
1.1
1.3
1.5
= 333V
= 5Ω
T = 125°C
J
L = 100µH
60
tf
50
tr
40
20
0
10
40
50
60
70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
30
40
50
60
70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
= 333V
V
30
= 333V
= 41A
T = 125°C
T = 125°C
J
diode reverse recovery.
Eon
900
600
SWITCHING ENERGY (µJ)
J
0
10
DD
D
L = 100µH
300
20
I
= 5Ω
EON includes
Eon and Eoff (µJ)
0.9
10
0
10
9-2004
0.7
20
10
1200
0.5
30
20
1500
50
70
= 333V
= 5Ω
T = 125°C
40
40
10
V
tr and tf (ns)
td(on) and td(off) (ns)
DD
30
TJ =+150°C
80
R
20
100
90
td(off)
V
10
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
60
50
0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
70
Coss
100
10
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
10
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
Ciss
100µS
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10,000
OPERATION HERE
LIMITED BY RDS (ON)
100
050-7029 Rev E
APT5010JFLL
20,000
L = 100µH
EON includes
1500
Eoff
diode reverse recovery.
Eon
1000
500
Eoff
20
30
40
50
60
70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5010JFLL
Gate Voltage
90%
10 %
Gate Voltage
T = 125 C
J
td(on)
td(off)
tr
T = 125 C
J
Drain Voltage
Drain Current
90%
tf
90%
5%
5%
10%
Drain Voltage
10 %
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
9-2004
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7029 Rev E
7.8 (.307)
8.2 (.322)