TriQuint AGR19180EF 180 w, 1930 mhz-1990 mhz, pcs ldmos rf power transistor Datasheet

AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), code division multiple access (CDMA),
global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
Device Performance Features
High-reliability, gold-metalization process.
Hot carrier injection (HCI) induced bias drift of <5%
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 180 W output
power pulsed 4 µs at 10% duty.
Large signal impedance parameters available.
ESD Rating*
375D–03, STYLE 1
Figure 1. AGR19180EF (flanged) Package
CDMA Features
Typical two carrier CDMA performance:
VDD = 28 V, IDQ = 1600 mA, POUT = 38 W,
f1 = 1958.75 MHz, f2 = 1961.25 MHz, IS-95/97
CDMA pilot, sync, paging, traffic codes 8—13
(9 channels) 1.2288 MHz channel bandwidth (BW),
adjacent channel power ration (ACPR) measured
over a 30 kHz BW at f1 – 885 kHz, f2 + 885 kHz.
Distortion products measured over 1.2288 MHz
channel BW at f1 – 2.5 MHz, f2 + 2.5 MHz.
Peak/avg = 9.72 dB @ 0.01% probability on
CCDF:
— Output power: 38 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –48.5 dBc
— Return loss: –12 dB.
AGR19180EF
HBM
MM
CDM
Minimum (V)
500
50
1000
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Symbol
RθJC
Value
0.35
U nit
°C/W
Symbol
VDSS
VGS
PD
—
TJ
TSTG
Value
65
–0.5, 15
500
3
200
–65, 150
U nit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C
Derate Above 25 °C
Operating Junction Temperature
Storage Temperature Range
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 3. dc Characteristics
Parameter
Symbol
Off Characteristics
300 µA)
V(BR)DSS
Drain-source Breakdown Voltage (VGS = 0, ID = 400
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
IDSS
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
On Characteristics
GFS
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 600 µA)
VGS(TH)
VGS(Q)
Gate Quiescent Voltage (VDS = 28 V, ID = 2 x 800 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
VDS(ON)
Min
Typ
Max
Unit
65
—
—
—
—
—
—
6
18
200
Vdc
µAdc
µAdc
—
—
—
—
12
—
3.8
0.08
—
3.0
—
—
S
Vdc
Vdc
Vdc
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics (continued)
Table 4. RF Characteristics
Parameter
Dynamic Characteristics
Symbol
Min
Typ
Max Unit
—
4.0
—
pF
CRSS
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(Part is internally matched both on input and output.)
Supplied
Test Fixture)
Functional Tests (in
(in Agere
Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain
GPS
—
14.5
—
dB
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
η
—
26
—
%
Drain Efficiency
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
IM3
—
–33
—
dBc
Third-order Intermodulation Distortion*
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; IM3 measured in a 1.2288 MHz integration bandwidth
centered at f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
— –48.5 —
dBc
Adjacent Channel Power Ratio*
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz; ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz and f2 + 885 kHz, referenced to the carrier channel
power)
Input Return Loss
IRL
—
–12
—
dB
(VDD = 28 Vdc, POUT = 38 W average, two carrier N-CDMA,
IDQ = 1600 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz,
f2 = 1990 MHz)
Ruggedness
Ψ
No degradation in output
(VDD = 28 V, POUT = 180 W continuous wave (CW), IDQ = 1600 mA,
power.
f = 1930 MHz, VSWR = 10:1 [all phase angles])
* N-CDMA, typical peak/average ratio of 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz. VDD = 28 Vdc, IDQ = 2 x 800 mA,
and POUT = 38 W average.
.
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations
R1
VGG
C3
VDD
FB1
R3
+
R2
C4
C5
C6
C12
C7
C41
Z1
C1
Z5
Z7
Z2
2B
RF INPUT
Z4
C2
Z6
Z8
R4
VGS
C8
Z10
FB2
R6
R5
C9
2A
Z11
1A
Z13
Z21 C21 Z15
Z17
3 DUT
Z12
C11
C13
C14
Z18
RF OUTPUT
1B
Z14
Z22 C22 Z16
Z20
VDD
+
C10
+
C23 C24 C25 C26 C37 C27 C28 C29
Z19
Z9
Z3
+
+
+
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
C30 C31 C32 C33 C38 C34 C35 C36
C42
A. Schematic
R2
R3
C3
C4 C5 C6 C12
FB1
R1
C26
C23
C1
C21
C2
C22
C14 C42
C31 C32
R6 FB2
C8
R4
R5
C30
C9 C10C11
C37
C24 C25
C7 C41
C13
C27 C2 8 C2 9
C38
C33
C34 C35
C36
B. Component Layout
Parts List:
? Microstrip line: Z1 0.500 in. x 0.067 in.; Z2, Z17 1.080 in. x 0.110 in.; Z3, Z16 0.210 in. x 0.067 in.; Z4, Z15 2.020 in. x 0.067 in.;
Z5, Z6 0.230 in. x 0.067 in.; Z7, Z8 0.455 in. x 0.700 in.; Z9, Z10 1.100 in. x 0.035 in.; Z11, Z12 0.475 in. x 0.740 in.;
Z13, Z14 0.100 in. x 0.067 in.; Z18 0.230 in. x 0.067 in.; Z19, Z20 0.490 in. x 0.050 in.; Z21, Z22 0.160 in. x 0.285 in.
®
? ATC chip capacitor: C1, C2, C21, C22: 10 pF; C7, C14, C23, C30, C41, C42: 8.2 pF; C12, C13: 1000 pF.
®
? Kemet tantalum capacitor: C27, C34: 10 µF, 35 V T491D; C4, C9, C37, C38: 1 µF, 50 V T491C.
®
? Kemet chip capacitor: C5, C10, C18, C26, C33: 0.1 µF.
®
? Sprague tantalum surface-mount chip capacitor: C3, C8, C28, C29, C35, C36: 22 µF, 35 V.
®
? Vitramon 1206 capacitor: C5, C12: 22000 pF.
? 1206 size chip resistor: R1, R4: 4.7 kΩ; R2, R5 560 kΩ, R3, R6: 1.02 kΩ.
®
? Fair-Rite ferrite bead: FB1, FB2: 2743019447.
®
? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. Test Circuit
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
IN D
90
0.6
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
170
0.
8
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.8
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
± 180
0.1
0.2
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
D L OA D <
OW A R
HST
N GT
-170
EL E
0.2
20
2
0.36
5
-90
0.12
0.13
0.38
0.37
0.0
IV
CT
DU
,O
o)
R
-75
IN
-80
0
-15
5
40
-1
06
0.
5
0.
-70
-160
-85
0.48
)
/ Yo
(-jB
CE
Z
X/
.0
1.8
1.6
1.4
1.2
1.0
0.9
-4
0.14
9
-110
0.11
-100
V
0
0.35
-80
(-j
WA
1.
0.7
0
-4
0.15
0
-70
-5
6
4
0.8
5
-3
0.1
0.3
T
0.
07
30
-1
0.4
2
-12 0.08
0
5
-60
RE
AC
TA
-5
3
0.3
7
0.1
VE
-60
32
CA P
AC
I TI
-65
0.2
-30
EN
0.6
0.
18
PO
N
0
0
-5
-25
0.
NC
EC
OM
<Ð
AN
PT
CE
US
ES
0.4
0.0
-20
31
0.
4
.4
0.6
0
3.
0.3
5
0.4
0.8
0
4.0
.04
-15
6
0
1.
8
0.4
5.0
2
0.2
9
0.2
43
0.
1
0.4
0.1
0.4
0.39
1930 (f1)
1960 (f2)
1990 (f3)
ZS Ω
(Complex Source Impedance)
2.58 – j5.9
2.36 – j5.26
2.37 – j4.51
19
0.
MHz (f)
0
Z0 = 10 Ω
f1
ZS
-4
4
0.
1
-30
f3
0.2
f1
0.2
0.3
8
0.
ZL
-10
-90
10
0.2
0.6
f3
0.2
0
0.4
0.1
-20
.47
50
0.49
L E OF
ANG
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
U CT
Typical Performance Characteristics
ZL Ω
(Complex Optimum Load Impedance)
3.2 – j4.67
2.85 – j3.86
2.72 – j3.07
ZS = Test circuit impedance as measured from gate to gate, balanced configuration.
ZL = Test circuit impedance as measured from drain to drain, balanced configuration.
DRAIN (1)
–
+
GATE (2)
+
–
ZS
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
18
Gps, POWER GAIN (dB)
17
Idq = 2400mA
Idq = 2000mA
16
Idq = 1600mA
15
Idq = 1200mA
14
Idq = 800mA
13
12
Vdd = 28V
Center Frequency = 1960 MHz
Two-Tone Meas urement, 100kHz Tone Spacing
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
1000
Figure 4. Two-Tone Power Gain versus Output Power
-10
IM3, THIRD ORDER INTERMODULATION DISTORTION
(dBc)
Vdd = 28V
Center Frequency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
-20
-30
Idq = 800mA
Idq =1200mA
Idq = 2400mA
-40
Idq =2000mA
-50
-60
Idq =1600mA
1
10
10 0
Pout, OUTPUT POWER (WATTS) PEP
10 0 0
Figure 5. Third Order Intermodulation Distortion versus Output Power
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-10
Vdd = 28V Idq = 1600mA
Center Frequency = 1960 MHz
Two-Tone Measurement, 100kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-20
-30
-40
3rd Order
-50
-60
5th Order
-70
-80
7th Order
-90
1
10
100
1 0 00
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus Output Power
Pout, OUTPUT POWER (dBm)
60
59
58
P3dB = 53.88 dBm (244.34W)
57
56
55
54
53
52
51
P1dB = 53 dBm (199.77W)
50
49
48
47
46
45
44
43
42
41
40
Vdd = 28 Vdc, Idq = 1600 mA
Pulsed CW 4 msec (on), 40 msec (off)
Center Frequency = 1960 MHz
25
26
27
28
29
30
31
32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
39
40
41
42
Figure 7. Pulsed CW Output Power versus Input Power
43
44 4 5
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Vdd = 28 Vdc, Idq = 1600 mA
f 1 = 1958.75 MHz, f2 = 1961.25 MHz
2-Carrier N-CDMA
Gps, POWER GAIN (dBm), EFFICIENCY (%)
45
40
-10
IRL
-20
IM3
35
-30
Efficiency
30
-40
ACPR
25
20
-50
-60
Gps
15
-70
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier.
9.72 dB Peak/Avg. Ratio @ 0.01% Probability (CCDF)
Channel Spacing (Bandwidth)
ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz)
10
5
0
0
0
20
40
60
Pout, OUTPUT POWER (WATTS) Avg.
80
-80
-90
100
IRL, RETURN LOSS (dB), IM3 (dBc), ACPR (dBc)
50
-100
Figure 8. Two-Carrier N-CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power
Vdd = 28 Vdc, Idq = 1600 mA
f = 1990 MHz Bandwidth = 1.2288 MHz
Channel Spacing ( Channel Bandwidth)
885 kHz (30 kHz), 1.25 MHz (12.5 kHz)
2.25 MHz (1MHz)
GPS, POWER GAIN, EFFICIENCY (%)
45
40
35
0
-10
Efficiency
2.25 MHz ( 1MHz)
-20
-30
30
885 kHz (30 kHz)
-40
25
1.25 MHz (12.5 kHz)
-50
20
-60
Gps
15
-70
10
-80
CDMA 9 Channel Forward
Pilot: 0, Paging: 1, Traffic: 8-13, Sinc: 32
5
0
0
20
40
60
Pout, OUTPUT POWER (WATTS), AVG.
80
-90
ADJACENT CHANNEL POWER RATIO (dBc)
50
-100
100
Figure 9. N-CDMA ACPR, Power Gain, Drain Efficiency versus Output Power
AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
1A
PINS:
1A. DRAIN
1B. DRAIN
2A. GATE
2B. GATE
3. SOURCE
1B
3
PEAK DEVICES
AGR19180EF
XXXX
2A
XXXX - 4 Digit Trace Code
2B
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