Excelics EIC1212-8 12.20-12.70 ghz 8-watt internally matched power fet Datasheet

EIC1212-8
12.20-12.70 GHz 8-Watt Internally Matched Power FET
UPDATED 01/04/2006
Excelics
FEATURES
•
•
•
•
•
•
•
•
12.20– 12.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
-46 dBc IM3 at PO = 28.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
P1dB
G1dB
∆G
PAE
.421
.120 MIN
.120 MIN
YYWW
SN
.004
.125
.063
.508±.008
.442
.168±.010
.004
.105±.008
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
.024
EIC1212-8
.827±.010 .669
Caution! ESD sensitive device.
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
f = 12.20-12.70GHz
VDS = 10 V, IDSQ ≈ 2200mA
MIN
TYP
MAX
38.5
39.0
dBm
5.5
6.5
dB
±0.6
IM3
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 12.70GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
4000
5000
VP
Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
-2.5
-4.0
RTH
f = 12.20-12.70GHz
Thermal Resistance
2300
%
Drain Current at 1dB Compression
Note: 1) Tested with 100 Ohm gate resistor.
-43
2600
mA
-46
3.5
2) S.C.L. = Single Carrier Level.
dB
27
Id1dB
3
UNITS
dBc
4.0
mA
V
o
C/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
Notes:
1.
2.
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
10 V
VGS
Gate to Source Voltage
-4.5 V
IDS
Drain Current
IDSS
IGSF
Forward Gate Current
80 mA
PIN
Input Power
PT
Total Power Dissipation
38 W
TCH
Channel Temperature
175°C
TSTG
Storage Temperature
-65/+175°C
@ 3dB compression
Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised January 2006
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