KSC5802D KSC5802D High Voltage Color Display Horizontal Deflection Output (Built In Damper Diode) • • • • High Breakdown Voltage BVCBO=1500V High Speed Switching : tF=0.1µs (Typ.) Wide S.O.A For C-Monitor(69KHz) Equivalent Circuit C B TO-3PF 1 50Ω typ. 1.Base 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 IC Collector Current (DC) 10 V A ICP Collector Current (Pulse) 30 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 1400V, VBE=0 Min. Typ. Max. 1 Units mA ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 4V, IC = 0 50 250 mA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 1A VCE = 5V, IC = 6A 15 7 40 11.5 VCE(sat) Collector-Emitter Saturation Voltage IC = 6A, IB = 1.5A 3 VBE(sat) Base-Emitter Saturation Voltage IC = 6A, IB = 1.5A 1.5 V tF Fall Time VCC = 200V, IC = 6A IB1 = 1.2A, IB2= - 2.4A RL = 33.3Ω 0.3 µs ©2000 Fairchild Semiconductor International 0.1 V Rev. A, February 2000 KSC5802D Typical Characteristics 100 10 V CE=5V IB = 1.0A IB = 900mA IB = 800mA IB = 700mA IB = 600mA IB = 500mA 8 7 6 IB = 400mA IB = 300mA IB = 200mA 5 4 3 IB = 100mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 9 10 2 1 1 0.1 0 0 2 4 6 8 10 1 10 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characterisic Figure 2. DC current Gain 10 12 VCE(sat)[mV], SATURATION VOLTAGE VCE = 5V IC[A], COLLECTOR CURRENT 10 1 IC=5IB IC=3IB 0.1 0.01 0.1 1 8 6 4 2 0 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 RESISTIVE LOAD tstg[µs], STORAGE TIME tF[µs], FALL TIME IB1=1.2A IC[A], COLLECTOR CURRENT V CC=200V IC=6A tstg 1 tf 10µ s 10 DC 100µ s 100ms 10ms 1ms 1 0.1 SINGLE PULSE Tc=25℃ 0.1 0.01 0.1 1 -IB2[A], BASE CURRENT Figure 5. Switching Time ©2000 Fairchild Semiconductor International 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, February 2000 KSC5802D Typical Characteristics (Continued) 100 80 10 PD[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 70 IB2 = -1A CONST (at IC >= 5A) 1 IC = 5IB1 = 5IB2 L = 500µ H SINGLE PULSE 50 40 30 20 10 0.1 10 60 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 0 0 25 50 75 100 125 150 175 200 TC[℃], CASE TEMPERATURE Figure 8. Power Derating Rev. A, February 2000 KSC5802D Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E