Fairchild FCH47N60F 600v n-channel mosfet Datasheet

TM
SuperFET
FCH47N60F
600V N-Channel MOSFET
Features
Description
• 650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
• Typ. RDS(on) = 0.062Ω
• Fast Recovery Type ( trr = 240ns)
• Ultra Low Gate Charge (typ. Qg = 210nC)
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
• Low Effective Output Capacitance (typ. Cosseff. = 420pF)
• 100% avalanche tested
D
G
TO-247
G D
S
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FCH47N60F
Unit
600
V
47
29.7
A
A
141
A
(Note 1)
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
1800
mJ
Avalanche Current
(Note 1)
47
A
EAR
Repetitive Avalanche Energy
(Note 1)
41.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
50
V/ns
PD
Power Dissipation
417
3.33
W
W/°C
-55 to +150
°C
300
°C
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FCH47N60F Rev. B
1
Typ.
Max.
Unit
--
0.3
°C/W
0.24
--
°C/W
--
41.7
°C/W
www.fairchildsemi.com
FCH47N60F 600V N-Channel MOSFET
May 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCH47N60F
FCH47N60F
TO-247
-
-
30
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
VGS = 0V, ID = 250μA, TJ = 25°C
600
--
--
V
VGS = 0V, ID = 250μA, TJ = 150°C
--
650
--
V
ID = 250μA, Referenced to 25°C
--
0.6
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 47A
--
700
--
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
10
100
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 23.5A
--
0.062
0.073
Ω
gFS
Forward Transconductance
VDS = 40V, ID = 23.5A
--
40
--
S
--
5900
8000
pF
--
3200
4200
pF
--
250
--
pF
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 480V, VGS = 0V, f = 1.0MHz
--
160
--
pF
Coss eff.
Effective Output Capacitance
VDS = 0V to 400V, VGS = 0V
--
420
--
pF
VDD = 300V, ID = 47A
RG = 25Ω
--
185
430
ns
--
210
450
ns
--
520
1100
ns
--
75
160
ns
--
210
270
nC
--
38
--
nC
--
110
--
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 4, 5)
VDS = 480V, ID = 47A
VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
47
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
141
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 47A
--
--
1.4
V
trr
Reverse Recovery Time
240
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 47A
dIF/dt =100A/μs
--
Qrr
--
2.04
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 47A, di/dt ≤ 1,200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCH47N60F Rev. B
2
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FCH47N60F 600V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
10
2
1
10
* Notes :
1. 250μs Pulse Test
o
2. TC = 25 C
0
10
-1
0
10
10
ID , Drain Current [A]
2
150°C
1
10
-55°C
- Note
1. VDS = 40V
0
2. 250μs Pulse Test
10
2
1
10
25°C
10
4
VDS, Drain-Source Voltage [V]
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.25
IDR , Reverse Drain Current [A]
RDS(ON) [Ω],Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.20
0.15
VGS = 10V
0.10
VGS = 20V
0.05
2
10
1
10
150°C
25°C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
* Note : TJ = 25°C
0.00
0
0
20
40
60
80
100
120
140
160
180
10
200
0.2
0.4
0.6
Figure 5. Capacitance Characteristics
25000
VGS, Gate-Source Voltage [V]
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
Crss
0
1
10
1.6
VDS = 250V
VDS = 400V
8
6
4
2
* Note : ID = 47A
0
50
100
150
200
250
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FCH47N60F Rev. B
10
0
10
1.4
VDS = 100V
15000
0
-1
10
1.2
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
5000
1.0
Figure 6. Gate Charge Characteristics
20000
10000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
6
VGS , Gate-Source Voltage [V]
3
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FCH47N60F 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250μA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 23.5 A
0.5
0.0
-100
200
-50
0
TJ, Junction Temperature [°C]
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
Operation in This Area
is Limited by R DS(on)
2
40
100 μs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
1
10
DC
* Notes :
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0
10
0
10
20
10
-1
10
30
1
2
10
0
25
3
10
10
50
75
100
125
150
TC, Case Temperature [°C]
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response
Figure 10. Transient Thermal Response Curve
D = 0 .5
10
-1
* N o te s :
1 . Z θ J C ( t) = 0 .3 ° C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .2
0 .1
PDM
0 .0 5
10
-2
10
t1
0 .0 2
0 .0 1
-5
t2
s in g le p u ls e
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FCH47N60F Rev. B
4
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FCH47N60F 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCH47N60F 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCH47N60F Rev. B
5
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FCH47N60F 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCH47N60F Rev. B
6
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FCH47N60F 600V N-Channel MOSFET
Mechanical Dimensions
TO-247AD (FKS PKG CODE 001)
Dimensions in Millimeters
FCH47N60F Rev. B
7
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
8
FCH47N60F Rev. B
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FCH47N60F 600V N-Channel MOSFET
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