Dynex DCR5980Z Phase control thyristor target information Datasheet

DCR5980Z
DCR5980Z
Phase Control Thyristor
Target Information
DS5482-1.1 February 2002
FEATURES
■
Double Side Cooling
■
High Surge Capability
■
Low Inductance Internal Construction
KEY PARAMETERS
VDRM
(max)
IT(AV)
(max)
ITSM
dV/dt
dI/dt
1800V
5985A
98000A
1000V/µs
250A/µs
APPLICATIONS
■
High Power Converters
■
DC Motor Control
■
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
DCR5980Z18
DCR5980Z16
DCR5980Z14
DCR5980Z12
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: Z
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR5980Z14
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR5980Z
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Max.
Units
5985
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
9400
A
Continuous (direct) on-state current
-
8400
A
3820
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
6000
A
Continuous (direct) on-state current
-
4920
A
Max.
Units
4650
A
IT
Half wave resistive load
Tcase = 80˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
7300
A
Continuous (direct) on-state current
-
6360
A
2910
A
IT
Half wave resistive load
Single Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4570
A
Continuous (direct) on-state current
-
3630
A
IT
Half wave resistive load
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DCR5980Z
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
Units
78.0
kA
30.4 x 106
A2s
98.0
kA
48 x 106
A2s
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
Surge (non-repetitive) on-state current
Max.
10ms half sine, Tcase = 125˚C
I2t for fusing
VR = 0
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125˚C
-
500
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 1100A
Repetitive 50Hz
-
250
A/µs
Gate source 1A,
Non-repetitive
-
500
A/µs
IRRM/IRRM
tr = 0.5µs, Tj = 125˚C
Threshold voltage
At Tvj = 125˚C
-
0.77
V
rT
On-state slope resistance
At Tvj = 125˚C
-
0.05
mΩ
tgd
Delay time
VD = 67% VDRM, gate source 20V, 10Ω
1.0
1.5
µs
VT(TO)
tr = 0.5µs, Tj = 25˚C
IL
Latching current
Tj = 25˚C, VD = 5V
150
750
mA
IH
Holding current
Tj = 25˚C, VG–K = ∞
40
200
mA
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DCR5980Z
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Test Conditions
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Min.
Max.
Units
Double side cooled
DC
-
0.0065
˚CW
Single side cooled
Anode DC
-
0.013
˚CW
Cathode DC
-
0.013
˚CW
Double side
-
0.001
˚CW
(with mounting compound) Single side
-
0.002
˚CW
On-state (conducting)
-
135
˚C
Reverse (blocking)
-
125
˚C
Clamping force 83.0kN
Tstg
Storage temperature range
–55
125
˚C
Fm
Clamping force
74.0
91.0
kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
500
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
-
-
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DCR5980Z
CURVES
6000
8000
7000
6000
Mean power dissipation - (W)
Instantaneous on-state current, IT -(A)
5000
5000
4000
3000
4000
3000
2000
2000
dc
1/2 wave
3 phase
6 phase
1000
1000
0
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
Instant on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
1.15
0
0
1000
2000
3000
4000
5000
Mean on-state current, IT(AV) - (A)
6000
Fig.3 Power dissipation
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.4624
B = 0.0275
C = 2.2501 x 10–5
D = 0.0032
these values are valid for Tj = 125˚C for IT 500A to 7000A
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DCR5980Z
1200
100
1100
Table gives pulse power PGM in Watts
Pulse Width
1000
Gate trigger voltage, VGT - (V)
Recoverd charge, Qr - (µC)
900
800
700
600
500
400
Frequency Hz
50
150
150
150
150
20
µs
100
200
500
1ms
10ms
100
150
150
150
100
-
400
150
125
100
25
-
VFGM
100W
50W
20W
10W
10
it
99
im
rL
e
pp
1
%
Tj = 25˚C
U
300
%
200
VGD
Lo
100
0
0
1
3
5
7
9
2
4
6
8
10
Rate of decay of on-state current, di/dt - (A/µs)
11
we
im
rL
it 1
IGD
0.1
0.001
IFGM
10
0.01
0.1
1.0
Gate trigger current, IGT - (A)
Fig.4 Recovered charge
Fig.5 Gate characteristics
0.1
50
50
ITSM
I2t
40
30
30
20
20
10
10
0.01
Double side cooled
I2t value - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
0.001
Effective thermal resistance
Junction to case ˚C/W
Conduction
0.0001
0.001
Double side
0.0065
0.0072
0.0073
0.0076
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
1
Anode side
0.0130
0.0137
0.0138
0.0141
10
Peak half sine on-state current - (kA)
40
I2t = Î2 x t
2
100
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance junction to case (˚C/W)
0
1
2
3
4
5
7
6
Pulse width - (ms)
8
9
0
10
Fig.7 Sub-cycle surge current
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DCR5980Z
Peak half sine wave on-state current - (kA)
25
20
15
10
5
0
0
5
10
15
20
25
30
35
Number of cycles @ 50Hz
40
45
50
Fig.8 Multi-cycle surge current
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DCR5980Z
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
2 holes Ø3.6 ± 0.5 depth 2.0
(One in each electrode)
Gate tab
Cathode tab
Cathode
Ø151 max
37.5 max
Ø100
Ø100
Ø148 max
Anode
Nominal weight: 2800g
Clamping force: 83kN ±10%
Lead length: 500mm
Lead terminal connector: M4 ring
Package outline type code: Z
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DCR5980Z
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
CUSTOMER SERVICE CENTRES
Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5482-1 Issue No. 1.1 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
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